Abstract: A high-voltage semiconductor device structure is provided. The high-voltage semiconductor device structure includes a semiconductor substrate, a source ring in the semiconductor substrate, and a drain region in the semiconductor substrate. The high-voltage semiconductor device structure also includes a doped ring surrounding sides and a bottom of the source ring and a well region surrounding sides and bottoms of the drain region and the doped ring. The well region has a conductivity type opposite to that of the doped ring. The high-voltage semiconductor device structure further includes a conductor electrically connected to the drain region and extending over and across a periphery of the well region. In addition, the high-voltage semiconductor device structure includes a shielding element ring between the conductor and the semiconductor substrate. The shielding element ring extends over and across the periphery of the well region.

Abstract: A magnetoresistive random access memory (MRAM) includes a first transistor and a second transistor on a substrate, a source line coupled to a first source/drain region of the first transistor, and a first metal interconnection coupled to a second source/drain region of the first transistor. Preferably, the first metal interconnection is extended to overlap the first transistor and the second transistor and the first metal interconnection further includes a first end coupled to the second source/drain region of the first transistor and a second end coupled to a magnetic tunneling junction (MTJ).

Abstract: Some implementations described herein include systems and techniques for fabricating a wafer-on-wafer product using a filled lateral gap between beveled regions of wafers included in a stacked-wafer assembly and along a perimeter region of the stacked-wafer assembly. The systems and techniques include a deposition tool having an electrode with a protrusion that enhances an electromagnetic field along the perimeter region of the stacked-wafer assembly during a deposition operation performed by the deposition tool. Relative to an electromagnetic field generated by a deposition tool not including the electrode with the protrusion, the enhanced electromagnetic field improves the deposition operation so that a supporting fill material may be sufficiently deposited.

Abstract: The present disclosure, in some embodiments, relates to a method of forming an integrated chip structure. The method may be performed by forming a plurality of interconnect layers within a first interconnect structure disposed over an upper surface of a first semiconductor substrate. An edge trimming process is performed to remove parts of the first interconnect structure and the first semiconductor substrate along a perimeter of the first semiconductor substrate. The edge trimming process results in the first semiconductor substrate having a recessed surface coupled to the upper surface by way of an interior sidewall disposed directly over the first semiconductor substrate. A dielectric capping structure is formed onto a sidewall of the first interconnect structure after performing the edge trimming process.

Abstract: The present invention provides a semiconductor device and a method of forming the same, and the semiconductor device includes a substrate, a first interconnect layer and a second interconnect layer. The first interconnect layer is disposed on the substrate, and the first interconnect layer includes a first dielectric layer around a plurality of first magnetic tunneling junction (MTJ) structures. The second interconnect layer is disposed on the first interconnect layer, and the second interconnect layer includes a second dielectric layer around a plurality of second MTJ structures, wherein, the second MTJ structures and the first MTJ structures are alternately arranged along a direction. The semiconductor device may obtain a reduced size of each bit cell under a permissible process window, so as to improve the integration of components.

Abstract: An artificial intelligence oxygen controller includes an oxygen input receiving a first flow rate of gas containing high-concentration oxygen, an oxygen output outputting a second flow rate of gas containing high-concentration oxygen, and a gas regulation-output module receiving a blood oxygen level and comparing the blood oxygen level with a blood oxygen threshold range, where an amount of second flow rate of gas containing high-concentration oxygen from the first flow rate of gas containing high-concentration oxygen is determined by a comparison result. There are an artificial intelligence oxygen control system therewith, a blood oxygen measurement device therewith, and an artificial intelligence oxygen supply device therewith.

Abstract: A handheld electronic device is provided. The handheld electronic device includes a housing, a first speaker, a second speaker, a third speaker, and a fourth speaker. The housing includes a back plate, a first sidewall, and a second sidewall. The first sidewall and the second sidewall are disposed at opposite sides of the back plate. The first sidewall is parallel to the second sidewall, and a length of the first sidewall is greater than a distance between the first sidewall and the second sidewall. The first speaker and the second speaker are disposed in the housing and arranged along the first sidewall. The third speaker and the fourth speaker are disposed in the housing and arranged along the second sidewall.

Abstract: The present disclosure relates to an integrated circuit. The integrated circuit includes a an inter-layer dielectric (ILD) structure laterally surrounding a conductive interconnect. A dielectric protection layer is disposed over the ILD structure and a passivation layer is disposed over the dielectric protection layer. The passivation layer includes a protrusion extending outward from an upper surface of the passivation layer. A bottom electrode continuously extends from over the passivation layer to between sidewalls of the passivation layer. A data storage element is over the bottom electrode and a top electrode is over the data storage element.

Abstract: The present disclosure relates to an integrated chip. The integrated chip includes a bottom electrode disposed over a substrate. The bottom electrode has a first thickness along an outermost edge and a second thickness between the outermost edge and a lateral center of the bottom electrode. The first thickness is larger than the second thickness. A data storage structure is over the bottom electrode and a top electrode is over the data storage structure.

Abstract: The instant disclosure described a system and method to prevent the oxidizer overheating using cold side bypass for a VOCs treatment system with series rotor, which may be used in an organic waste air treatment system. The system is equipped with a Thermal Oxidizer (TO), a First Heat Exchanger, a Second Heat Exchanger, a third heat exchanger, a First Cold-Side Transporting Pipeline, a First Adsorption Rotor, a Second Adsorption Rotor, and a Chimney. There is a Cold-Side Proportional Damper installed between the First Desorption-Treated Air Pipeline and the First Cold-Side Transporting Pipeline, or it is installed on the First Desorption-Treated Air Pipeline. When the VOCs concentration becomes higher, the Cold-Side Proportional Damper can regulate the airflow to adjust the heat-recovery amount or concentration, when treating the organic waste air, it can prevent the TO from being overheated due to high oxidizer temperature, and protect it from Thermal Oxidizer shut-down.

Abstract: A system and method to prevent the oxidizer overheating using cold side bypass during high input for a VOCs treatment system with series rotor are described, which may be used in an organic waste air treatment system. The system is equipped with a Thermal Oxidizer (TO), a First Heat Exchanger, a Second Heat Exchanger, a third heat exchanger, a Fourth Heat Exchanger, a First Cold-Side Transporting Pipeline, a Fourth Cold-Side Transporting Pipeline, a First Adsorption Rotor, a Second Adsorption Rotor, and a Chimney. There is a Cold-Side Proportional Damper installed between the First Desorption-Treated Air Pipeline and the First Cold-Side Transporting Pipeline, the First Desorption-Treated Air Pipeline and the Fourth Cold-Side Transporting Pipeline or between the First Cold-Side Transporting Pipeline and the Fourth Cold-Side Transporting Pipeline, or the damper is installed on the First Desorption-Treated Air Pipeline.

Abstract: A sound quality evaluation method and a sound quality evaluation system using same are provided. The sound quality evaluation system records playback of a test audio file on a plurality of playback devices to generate a plurality of pieces of audio data, and divides the audio data into a plurality of frequency bands. The sound quality evaluation system calculates the frequency bands to obtain a plurality of evaluation scores of the playback devices. The sound quality evaluation system captures sound quality ranking information corresponding to the playback devices from a reference source, and adjusts the evaluation scores according to the sound quality ranking information, to further obtain a reference model. The sound quality evaluation system adjusts correspondingly evaluation scores of a plurality of to-be-tested playback devices according to the reference model, to obtain sound quality ranking information of the to-be-tested playback devices.

Abstract: The disclosure relates to preventing an oxidizer from overheating using cold side bypass during high input for a VOCs treatment system having a series rotor, which may be used in an organic waste air treatment system. The system includes a thermal oxidizer (TO), a first heat exchanger, a second heat exchanger, a third heat exchanger, a fourth heat exchanger, a first cold-side transporting pipeline, a fourth cold-side transporting pipeline, a first adsorption rotor, a second adsorption rotor, and a chimney. A cold-side proportional damper is installed between the first desorption-treated air pipeline and the first cold-side transporting pipeline, between the first desorption-treated air pipeline and the fourth cold-side transporting pipeline, or between the first cold-side transporting pipeline and the fourth cold-side transporting pipeline, or the damper is installed on the first desorption-treated air pipeline.

Abstract: A system and method to prevent an oxidizer overheating using cold side bypass for a volatile organic compounds (VOCs) treatment system with a series rotor are described, which is mainly used in the organic waste air treatment system. The system is equipped with a thermal oxidizer (to), a first heat exchanger, a second heat exchanger, a third heat exchanger, a first cold-side transporting pipeline, a first adsorption rotor, a second adsorption rotor, and a chimney. A cold-side proportional damper is installed between the first desorption-treated air pipeline and the first cold-side transporting pipeline, or it is installed on the first desorption-treated air pipeline. When the VOCs concentration becomes higher, the cold-side proportional damper can regulate the airflow to adjust the heat-recovery amount or concentration, when treating the organic waste air, it can prevent the thermal oxidizer from being overheated due to high oxidizer temperature, and protect from thermal oxidizer shut-down.

Abstract: A transparent device with bio-signal acquisition and feedback capabilities is provided, and includes a base that includes at least one actuator, a transparent container connected to the base, first and second electrodes disposed on the base, a body temperature sensor, a photoplethysmography (PPG) sensor module, and a bio-signal acquisition module that has an electrocardiographic (ECG or EKG) sensor function and acquires an ECG signal, a PPG signal, and a body temperature signal of the user. The bio-signal acquisition module determines physiological indices by using a preset algorithm and controls the at least one actuator to provide corresponding visual or auditory feedbacks in real time according to the physiological indices and an extended cardiac index of the user.

Abstract: A sound quality evaluation method and a sound quality evaluation system using same are provided. The sound quality evaluation system records playback of a test audio file on a plurality of playback devices to generate a plurality of pieces of audio data, and divides the audio data into a plurality of frequency bands. The sound quality evaluation system calculates the frequency bands to obtain a plurality of evaluation scores of the playback devices. The sound quality evaluation system captures sound quality ranking information corresponding to the playback devices from a reference source, and adjusts the evaluation scores according to the sound quality ranking information, to further obtain a reference model. The sound quality evaluation system adjusts correspondingly evaluation scores of a plurality of to-be-tested playback devices according to the reference model, to obtain sound quality ranking information of the to-be-tested playback devices.

Abstract: A light-emitting module including multiple light-emitting units and a display device are provided. Each of the light-emitting units includes multiple light-emitting elements. Each of the light-emitting elements includes a first end and a second end. The first ends of the light-emitting elements of a first light-emitting unit and a second light-emitting unit among the light-emitting units are electrically interconnected. The first ends of the light-emitting elements of a third light-emitting unit and a fourth light-emitting unit among the light-emitting units are electrically interconnected. The second end of one of the light-emitting elements of the first light-emitting unit and the second end of one of the light-emitting elements of the corresponding third light-emitting unit are electrically interconnected.

Abstract: Provided is a light emitting module, including multiple light emitting units and a multi-layer board. Each light emitting unit includes multiple light emitting elements and side connectors. Each light emitting element includes first and second ends. The light emitting units are disposed on the multi-layer board. The first and second ends of each light emitting element are connected to the side connectors through multiple through holes of the multi-layer board. The first ends of the light emitting elements of first and second light emitting units are electrically connected to each other. The first ends of the light emitting elements of third and fourth light emitting units are electrically connected to each other. The display device using the light emitting module of the disclosure may conduct the adjacent light emitting units to each other through the side connectors, increasing repair possibility and reducing the scrap uncontrolled rate of the display device.

Abstract: A handheld electronic device includes a first speaker, a second speaker, and an audio controller. The audio controller includes a signal receiving unit, a frequency crossover unit, a harmonic-wave generating unit, a low frequency enhancement unit, and a signal synthesis unit. The signal receiving unit receives an original sound signal and generates a first channel signal and a second channel signal according to the original sound signal. The frequency crossover unit sets a preset frequency crossover point to filter the first channel signal to generate a low frequency signal. The harmonic-wave generating unit generates harmonic waves according to the low frequency signal. The low frequency enhancement unit generates an enhancing low-frequency signal according to the harmonic waves. The signal synthesis unit generates a first channel enhanced signal according to the enhancing low-frequency signal and drives the first speaker.

Abstract: The present disclosure relates to an integrated circuit. The integrated circuit includes a an inter-layer dielectric (ILD) structure laterally surrounding a conductive interconnect. A dielectric protection layer is disposed over the ILD structure and a passivation layer is disposed over the dielectric protection layer. The passivation layer includes a protrusion extending outward from an upper surface of the passivation layer. A bottom electrode continuously extends from over the passivation layer to between sidewalls of the passivation layer. A data storage element is over the bottom electrode and a top electrode is over the data storage element.