Abstract: A plurality of active areas are defined on a semiconductor substrate. Then at least one gate is formed on the semiconductor substrate to cover a portion of the active area. Thereafter a plurality of source/drain are formed in the active area not covered by the gate followed by forming a first dielectric layer on the semiconductor substrate to cover the gate and the source/drain. After that, at least one pixel cap top plate is formed atop the first dielectric layer and a capacitor dielectric layer is formed atop the surface of the top plate. Finally, at least one pixel cap bottom plate is formed atop the first dielectric layer to cover the top plate.

Abstract: A plurality of active areas are defined on a semiconductor substrate. Then at least one gate is formed on the semiconductor substrate to cover a portion of the active area. Thereafter a plurality of source/drain are formed in the active area not covered by the gate followed by forming a first dielectric layer on the semiconductor substrate to cover the gate and the source/drain. After that, at least one pixel cap top plate is formed atop the first dielectric layer and a capacitor dielectric layer is formed atop the surface of the top plate. Finally, at least one pixel cap bottom plate is formed atop the first dielectric layer to cover the top plate.

Abstract: A plurality of active areas are defined on a semiconductor substrate. Then at least one gate is formed on the semiconductor substrate to cover a portion of the active area. Thereafter a plurality of source/drain are formed in the active area not covered by the gate followed by forming a first dielectric layer on the semiconductor substrate to cover the gate and the source/drain. After that, at least one pixel cap top plate is formed atop the first dielectric layer and a capacitor dielectric layer is formed atop the surface of the top plate. Finally, at least one pixel cap bottom plate is formed atop the first dielectric layer to cover the top plate.

Abstract: A plurality of active areas are defined on a semiconductor substrate. Then at least one gate is formed on the semiconductor substrate to cover a portion of the active area. Thereafter a plurality of source/drain are formed in the active area not covered by the gate followed by forming a first dielectric layer on the semiconductor substrate to cover the gate and the source/drain. After that, at least one pixel cap top plate is formed atop the first dielectric layer and a capacitor dielectric layer is formed atop the surface of the top plate. Finally, at least one pixel cap bottom plate is formed atop the first dielectric layer to cover the top plate.

Abstract: Methods for enhancing the effectiveness of barrier layers, needed to prevent interaction between overlying aluminum interconnect metallizations, and underlying silicon device regions, has been developed. One method consists of using dual layers of titanium nitride, on titanium disilicide. The first titanium nitride layer is obtained via rapid thermal annealing of an underlying titanium layer, in a nitrogen containing ambient, also resulting in the formation of the underlying titanium disilicide layer. The second titanium nitride layer is deposited using reactive sputtering. A second method, used to create an enhanced barrier layer, is to reactively sputter titanium nitride, directly on an underlying titanium layer. Rapid thermal annealing, in an ammonia and oxygen ambient, results in an oxygen containing titanium nitride barrier layer. The rapid thermal anneal cycle also converts the underlying titanium layer, to the desired titanium disilicide layer.

Abstract: The present method uses a one block out mask method for forming both the N channel and P channel MOS field effect transistors by providing a special oxidizing method that grows sufficient silicon oxide upon the already formed N+ source/drain regions which is sufficient to block the P+ ion implantation which forms the P channel device from the N channel device area.