Patents by Inventor Kuok San Ho

Kuok San Ho has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20080094761
    Abstract: A magnetoresistive sensor having a shape enhanced pinning and a flux guide structure. The sensor includes a sensor stack with a pinned layer, spacer layer and pinned layer. First and second hard bias layers and lead layers extend from the sides of the sensor stack. The hard bias layers and leads have a stripe height that is smaller than the stripe height of the free layer, resulting in a free layer that extends beyond the back edge of the lead and hard bias layer. This portion of the free layer that extends beyond the back edge of the leads and hard bias layers provides a back flux guide. Similarly, the sensor may have a free layer that extends beyond the front edge of the lead and hard bias layers to provide a front flux guide. The pinned layer extends significantly beyond the back edge of the free layer, providing the pinned layer with a strong shape enhanced magnetic anisotropy.
    Type: Application
    Filed: October 24, 2006
    Publication date: April 24, 2008
    Inventors: James Mac Freitag, Kuok San Ho, Mustafa Michael Pinarbasi, Ching Hwa Tsang
  • Patent number: 7346977
    Abstract: A method for making a magnetoresistive read head so that the pinned ferromagnetic layer is wider than the stripe height of the free ferromagnetic layer uses ion milling with the ion beam aligned at an angle to the substrate supporting the stack of layers making up the read head. The stack is patterned with photoresist to define a rectangular region with front and back long edges aligned parallel to the read head track width. After ion milling in two opposite directions orthogonal to the front and back long edges, the pinned layer width has an extension. The extension makes the width of the pinned layer greater than the stripe height of the free layer after the substrate and stack of layers are lapped. The length of the extension is determined by the angle between the substrate and the ion beam and the thickness of the photoresist.
    Type: Grant
    Filed: March 3, 2005
    Date of Patent: March 25, 2008
    Assignee: Hitachi Global Storage Technologies Netherlands B.V.
    Inventors: Marie-Claire Cyrille, Meng Ding, Elizabeth Ann Dobisz, Kuok San Ho, Scott Arthur MacDonald
  • Patent number: 7333304
    Abstract: A current perpendicular to plane (CPP) having hard magnetic bias layers located at the back of the sensor, opposite the air bearing surface. The bias layer is magnetostatically coupled with the free layer to bias the free layer in a desired direction parallel with the ABS. First and second magnetic shield layers may be provided at either lateral side of the sensor to provide exceptional track width definition. The placement of the bias layer at the back of the sensor makes possible the addition of magnetic shields at the sides of the sensor.
    Type: Grant
    Filed: November 4, 2004
    Date of Patent: February 19, 2008
    Assignee: Hitachi Global Storage Technologies Netherlands B.V.
    Inventors: Hardayal Singh Gill, Kuok San Ho
  • Publication number: 20080037183
    Abstract: A current perpendicular to plane (CPP) magnetoresistive sensor having a current path defined by first and second overlying insulation layers between which an electrically conductive lead makes content with a surface of the sensor stack. The current path being narrower than the width of the sensor stack allows the outer edges of the sensor stack to be moved outside of the active area of the sensor. This results in a sensor that is unaffected by damage at outer edges of the sensor layers. The sensor stack includes a free layer that is biased by direct exchange coupling with a layer of antiferromagnetic material (AFM layer). The strength of the exchange field can be controlled by adding Cr to the AFM material to ensure that the exchange field is sufficiently weak to avoid pinning the free layer.
    Type: Application
    Filed: August 10, 2006
    Publication date: February 14, 2008
    Inventors: James Mac Freitag, Kuok San Ho, Mustafa Michael Pinarbasi, Ching Hwa Tsang
  • Publication number: 20080030897
    Abstract: A magnetic head structure for use in perpendicular magnetic recording. The magnetic head includes a magnetic write head having a return pole with a magnetic shunt structure extending from the back end opposite the ABS. The magnetic shunt structure prevents magnetic field from the write coil from reaching and affecting the read head. More specifically the shunt structure prevents magnetic field from the portion of the write coil beyond the back gap (as measured from the ABS) from magnetizing a magnetic shield of the read head. The shunt structure is also configured so as to avoid stray field writing. The size and shape of the shunt structure is therefore, limited to avoid attracting stray fields that might cause such stray field writing.
    Type: Application
    Filed: August 1, 2006
    Publication date: February 7, 2008
    Inventors: Hardayal Singh Gill, Kuok San Ho, Wen-Chien David Hsiao, Yimin Hsu, Edward Hin Pong Lee, Vladimir Nikitin
  • Patent number: 7324313
    Abstract: Current-perpendicular-to-the-plane (CPP), current-in-to-the-plane (CIP), and tunnel valve type sensors are provided having an antiparallel (AP) coupled free layer structure, an in-stack biasing structure which stabilizes the AP coupled free layer structure and a nonmagnetic spacer layer formed between the in-stack biasing layer and the AP coupled free layer structure. The AP coupled free layer structure has a first AP coupled free layer adjacent to the nonmagnetic spacer layer, a second AP coupled free layer, and an antiparallel coupling (APC) layer formed between the first and the second AP coupled free layers. The net moment of the AP coupled free layer structure has an antiparallel edge magnetostatic coupling with the in-stack biasing structure. At the same time, the first AP coupled free layer has an antiparallel exchange coupling with the second AP coupled free layer.
    Type: Grant
    Filed: September 30, 2004
    Date of Patent: January 29, 2008
    Assignee: Hitachi Global Storage Technologies Netherlands B.V.
    Inventors: Jeffrey Robinson Childress, Robert E. Fontana, Jr., Kuok San Ho, Ching Hwa Tsang
  • Publication number: 20070266550
    Abstract: A read head for a disk drive and a method of fabricating the read head with overlaid lead pads that contact the top surface of the sensor between the hardbias structures to define the electrically active region of the sensor are described. The invention deposits the GMR and lead layers before milling away the unwanted material. A photoresist mask with a hole defining the active area of the sensor is preferably patterned over a layer of DLC that is formed into a mask. A selected portion of the exposed lead material is then removed using the DLC as a mask defining the active region of the sensor. A photoresist mask pad is patterned to define the full sensor width. The excess sensor and lead material exposed around the mask is milled away. The layers for the hardbias structure are deposited.
    Type: Application
    Filed: May 19, 2006
    Publication date: November 22, 2007
    Inventors: Tsung Yuan Chen, Kuok San Ho, Mustafa Michael Pinarbasi
  • Patent number: 7291279
    Abstract: A method of making a read sensor while protecting it from electrostatic discharge (ESD) damage involves forming a severable shunt during the formation of the read sensor. The method may include forming a resist layer over a plurality of read sensor layers; performing lithography with use of a mask to form the resist layer into a patterned resist which exposes left and right side regions over the read sensor layers as well as a shunt region; etching, with the patterned resist in place, to remove materials in the left and right side regions and in the shunt region; and depositing, with the patterned resist in place, left and right hard bias and lead layers in the left and right side regions, respectively, and in the shunt region for forming a severable shunt which electrically couples the left and right hard bias and lead layers together for ESD protection.
    Type: Grant
    Filed: April 30, 2004
    Date of Patent: November 6, 2007
    Assignee: Hitachi Global Storage Technologies Netherlands B.V.
    Inventors: Frederick Hayes Dill, Meng Ding, Kuok San Ho, Jordan Asher Katine, Scott Arthur MacDonald, Huey-Ming Tzeng
  • Patent number: 7253991
    Abstract: A magnetic head (slider) for perpendicular recording which requires no lapping is described. The head is fabricated with an air bearing surface that is parallel to the wafer surface. The coil and pole pieces are formed from thin films disposed parallel to the air bearing surface. Standard lithographic techniques can be used to define the shapes, gaps and pole piece dimensions. Non-rectilinear shapes can be formed; for example, side shields that conform around the write pole piece region. The thickness of the main and return pole pieces are controlled by the deposition process rather than by lapping. The saw cuts used to separate the individual sliders from the rest of the wafer are perpendicular to the air-bearing surface and do not pass through any critical features.
    Type: Grant
    Filed: April 30, 2004
    Date of Patent: August 7, 2007
    Assignee: Hitachi Global Storage Technologies Netherlands B.V.
    Inventors: Robert E. Fontana, Jr., Kuok San Ho, Ching Hwa Tsang
  • Patent number: 7244169
    Abstract: An in-line lapping guide uses a contiguous resistor in a cavity to separate a lithographically-defined sensor from the in-line lapping guide. As lapping proceeds through the cavity toward the sensor, the resistance across the sensor leads increases to a specific target, thereby indicating proximity to the sensor itself. The contiguous resistor is fabricated electrically in parallel to the sensor and the in-line lapping guide. The total resistance across the sensor leads show resistance change even when lapping through the cavity portion. One method to produce the contiguous resistor is to partial mill the cavity between the sensor and the in-line lapping guide so that a film of metal is left. Total resistance across leads is the parallel resistance of the sensor, the contiguous resistor, and the in-line lapping guide.
    Type: Grant
    Filed: September 30, 2004
    Date of Patent: July 17, 2007
    Assignee: Hitachi Global Storage technologies Netherlands BV
    Inventors: Marie-Claire Cyrille, Kuok San Ho, Tsann Lin, Scott Arthur MacDonald, Huey-Ming Tzeng
  • Patent number: 7199986
    Abstract: A magnetic sensor is provided, having two bias layers separated by a decoupling layer to eliminate exchange coupling between the bias layers. The two bias layers may have differing coercivities, such that the biases provided by the bias layers to the free layer are independently adjustable. The grain structures of the two bias layers may be substantially decorrelated by the decoupling layer.
    Type: Grant
    Filed: February 18, 2004
    Date of Patent: April 3, 2007
    Assignee: Hitachi Global Storage Technologies
    Inventors: Marie-Claire Cyrille, Meng Ding, Kuok-San Ho, Prakash Kasiraj, Ernesto Marinero, James Lamar Nix, Brian York
  • Publication number: 20070048624
    Abstract: An embodiment of the invention is a magnetic head with overlaid lead pads that contact the top surface of the sensor between the hardbias structures and do not contact the hardbias structures which are electrically insulated from direct contact with the sensor. The lead pad contact area on the top of the sensor is defined by sidewall deposition of a conductive material to form leads pads on a photoresist prior to formation of the remainder of the leads. The conductive material for the lead pads is deposited at a shallow angle to maximize the sidewall deposition on the photoresist, then ion-milled at a high angle to remove the conductive material from the field while leaving the sidewall material. An insulation layer is deposited on the lead material at a high angle, then milled at a shallow angle to remove insulation from the sidewall.
    Type: Application
    Filed: August 24, 2005
    Publication date: March 1, 2007
    Inventors: Tsung Chen, Frederick Dill, James Frietag, Kuok San Ho, Wipul Jayasekara, Kim Lee, Mustafa Pinarbasi, Ching Tsang, Pactrick Webb
  • Patent number: 7161773
    Abstract: Several embodiments of a sense current perpendicular to the planes of the sensor (CPP) and flux guide type of read head has a gap between first and second shield layers at an air bearing surface (ABS) where the flux guide is located which is less than a gap between the first and second shield layers at a recessed location where the sensor is located. This reduced gap increases the linear bit density capability of the read head. A longitudinal bias stack (LBS) is located in the sensor stack. Several unique methods of construction are described for forming the magnetic head assemblies.
    Type: Grant
    Filed: March 7, 2005
    Date of Patent: January 9, 2007
    Assignee: Hitachi Global Storage Technologies Netherlands B.V.
    Inventors: Robert Edward Fontana, Jr., Kuok San Ho, Tao Pan, Ching Hwa Tsang
  • Patent number: 7161763
    Abstract: Magnetic data storage devices use read/write heads to transfer data between the magnetic storage medium and the rest of the system. The read head is constructed with a magnetic layer called a free layer whose magnetic axis rotates based upon external magnetic influences of the magnetic storage medium. The free layer is biased into a predetermined magnetic orientation with the magnetic influence of a layer called a hard bias layer. Orientation of magnetic axes within the hard bias layer is desired. This document describes a hard bias layer whose magnetization exhibits uniaxial magnetic anisotropy.
    Type: Grant
    Filed: February 18, 2004
    Date of Patent: January 9, 2007
    Assignee: Hitachi Global Storage Technologies Netherlands B.V.
    Inventors: Kuok San Ho, Prakash Kasiraj, Ernesto E. Marinero, James L. Nix
  • Patent number: 7106561
    Abstract: A magnetically-coupled structure has two ferromagnetic layers with their in-plane magnetization directions coupled orthogonally across an electrically-conducting spacer layer that induces the direct orthogonal magnetic coupling. The structure has application for in-stack biasing in a current-perpendicular-to-the-plane (CPP) magnetoresistive sensor. One of the ferromagnetic layers of the structure is an antiparallel-pinned biasing layer and the other ferromagnetic layer is the sensor free layer. The antiparallel-pinned biasing layer has first and second ferromagnetic films separated by an antiferromagnetically-coupling film. An antiferromagnetic layer exchange-couples the first ferromagnetic film of the biasing layer to fix the net moment of the biasing layer parallel to the moment of the sensor pinned layer. This allows a single annealing step to be used to set the magnetization direction of the biasing and pinned layers.
    Type: Grant
    Filed: May 27, 2004
    Date of Patent: September 12, 2006
    Assignee: Hitachi Global Storage Technologies Netherlands B.V.
    Inventors: Matthew J. Carey, Jeffrey R. Childress, Kuok San Ho, Stefan Maat
  • Patent number: 7072156
    Abstract: A magnetic sensor is provided, having two bias layers separated by a decoupling layer to eliminate exchange coupling between the bias layers. The two bias layers may have differing coercivities, such that the biases provided by the bias layers to the free layer are independently adjustable. The grain structures of the two bias layers may be substantially decorrelated by the decoupling layer.
    Type: Grant
    Filed: February 18, 2004
    Date of Patent: July 4, 2006
    Assignee: Hitachi Global Storage Technologies Netherlands B.V.
    Inventors: Marie-Claire Cyrille, Meng Ding, Kuok San Ho, Prakash Kasiraj, Ernesto Marinero, James Lamar Nix
  • Patent number: 7062838
    Abstract: A method of forming an embedded read element is used in the fabrication process of a magnetic head assembly including write and read heads. In this method, three photolithographic patterning steps are applied for defining the designed height of the embedded read element, defining its designed width, and connecting it with conducting layers, respectively. An in-line lapping guide is also formed with a spacing in front of the embedded read element. In this method, two mechanical lapping steps are applied, one monitored by measuring the resistance of a parallel circuit of the embedded read element and the in-line lapping guide, and the other monitored by measuring the GMR response of the embedded read element.
    Type: Grant
    Filed: September 19, 2003
    Date of Patent: June 20, 2006
    Assignee: Hitachi Global Storage Technologies Netherland B.V.
    Inventors: Meng Ding, Kuok San Ho, Tsann Lin, Huey-Ming Tzeng
  • Patent number: 7054117
    Abstract: Longitudinal biasing of a free layer in a current perpendicular to the planes of the layers (CPP) type of sensor in a read head is implemented by pinning magnetic moments of first and second side portions of the free layer beyond the track width of the read head with first and second insulating antiferromagnetic (AFM) layers which are exchange coupled thereto. The pinning of the magnetic moments of the first and second side portions of the free layer pin and longitudinally bias the central active portion of the free layer within the track width so that the central portion of the free layer is magnetically stable.
    Type: Grant
    Filed: April 17, 2004
    Date of Patent: May 30, 2006
    Assignee: International Business Machines Corporation
    Inventors: Kuok San Ho, Tao Pan
  • Patent number: 7043823
    Abstract: A current-perpendicular-to the-plane (CPP) magnetoresistive device, such as a magnetic tunnel junction (MTJ), is formed by patterning a capping layer (e.g., using resist) in the shape of a central region of an underlying free ferromagnetic layer that in turn resides over additional layers of the MTJ. Side regions of the capping layer are removed by ion milling or etching down into the free ferromagnetic layer. Unmasked side regions of the ferromagnetic layer are then oxidized to render them locally non-ferromagnetic and electrically insulating.
    Type: Grant
    Filed: June 15, 2004
    Date of Patent: May 16, 2006
    Inventors: Jeffrey R. Childress, Elizabeth A. Dobisz, Robert E. Fontana, Jr., Kuok San Ho, Ching Hwa Tsang, Son Van Nguyen
  • Patent number: 7036208
    Abstract: A magnetoresistive sensor for use in a data storage device has a recessed sensing element (magnetic tunnel junction, CPP spin valve, etc.) with an exchange biased sensing ferromagnetic (free) layer, and a flux guide that magnetically connects the sensing element to a sensing surface of the sensor. The free layer is selectively exchange biased by a layer of exchange bias material placed under non-active regions of the free layer that lie outside the sensing element and flux guide track widths. The flux guide is provided by extending the free layer from a forward edge of the sensing element to the sensor surface. Advantageously, the sensing element and the flux guide have equal track width so that magnetic flux directed from the flux guide into the sensing element is not diluted with consequent loss of sensitivity.
    Type: Grant
    Filed: September 30, 2003
    Date of Patent: May 2, 2006
    Assignee: Hitachi Global StorageTechnologies Netherlands B.V
    Inventors: Kuok San Ho, Tao Pan