Abstract: A method for the fabrication of a light-sensing diode in a high-resistivity semiconductor substrate. A high-energy implant of ions into the substrate is patterned to form an annular well of the same conductivity type as the substrate; followed by a second high-energy implant of the opposite conductivity type, within the center of the annulus; followed by a third implant, of lower energy and high dosage, to form a region of the first conductivity type extending laterally near the substrate surface. The resulting diode junction is thereby patterned to include two planes near the substrate surface, allowing incident light to traverse the junction twice.

Abstract: A light-sensing diode in a high resistivity semiconductor substrate of a first conductivity type, the substrate having a surface protected by an insulator, comprising

Abstract: A light-sensing diode having improved efficiency due to an extended junction geometry that provides more than one level of interaction with the light input.

Abstract: A light-sensing diode fabricated in a semiconductor substrate having a surface protected by an insulator, comprising a first region of one conductivity type in this substrate, a second region of the opposite conductivity type forming a junction with the first region in the substrate; this junction having a convoluted shape, providing two portions generally parallel to the surface, and a constricted intersection with the surface; and a gate for applying electrical bias across the junction, this gate positioned on the insulator such that it covers all portions of the junction intersection with the surface, thereby creating a gate-controlled photodiode.

Abstract: A light-sensing diode fabricated in a semiconductor substrate having a surface protected by an insulator, comprising a first region of one conductivity type in this substrate, a second region of the opposite conductivity type forming a junction with the first region in the substrate; this junction having a convoluted shape, providing two portions generally parallel to the surface, and a constricted intersection with the surface; and a gate for applying electrical bias across the junction, this gate positioned on the insulator such that it covers all portions of the junction intersection with the surface, thereby creating a gate-controlled photodiode.

Abstract: A light-sensing diode in a high resistivity semiconductor substrate of a first conductivity type, the substrate having a surface protected by an insulator, comprising

Abstract: A densely integrated pixel, fabricated by CMOS technology, comprises a photodiode formed by a n-well, with cathode, surrounded by a p-well; a reset MOS transistor formed such that its polysilicon gate is positioned, for diode control, across the junction formed by p-well and n-well regions, and its source is merged with the photodiode cathode; and a sensing MOS transistor formed such that its source is combined with the drain of the reset transistor and its gate is electrically connected to the source of the reset transistor. In the pixel of the invention, the photodiode leakage current is greatly reduced, because no n+/p-well junction is connected to the photodiode, and the fill factor is improved, because the pixel size is much reduced.

Abstract: The op-amp circuit described herein utilizes current summing to substantially eliminate cross-over distortion. Therefore, the op-amp circuit is characterized by linearity over the operable voltage range of the amplifier. Additionally, the op-amp circuit is capable of rail-to-rail input and output voltage swings. Furthermore, the op-amp circuit is capable of operating with a power supply voltage as low as two volts when fabricated in modern CMOS fabrication processes, without requiring special processing steps. An output circuit within the op-amp circuit is configured with pullup and pulldown devices which combine to provide output voltages throughout the operable range of the op-amp. However, when an output voltage equal to the power supply voltage is desired, the pulldown device substantially stops its pulldown current flow. Therefore, the pullup device charges the output conductor of the op-amp circuit fully to the power supply voltage.

Abstract: A voltage controlled oscillator circuit with a high power supply rejection ratio incorporates a clamping transistor with respect to each output terminal which limits the signal swing of the output terminal. The limited voltage swing allows relatively large movements in the power supply and ground voltages without causing significant changes in the frequency of the output signals. Such an oscillator circuit may be incorporated into an integrated circuit characterized by noisy power supply and ground conductors. Additionally, multiple delayed versions of the output frequency may be created using a level shifter circuit and a buffer circuit. The oscillator circuit is relatively quick to react to changes in the controlling voltage, adjusting the oscillation frequency in a relatively short time interval.

Abstract: The op-amp circuit described herein utilizes current summing to substantially eliminate cross-over distortion. Therefore, the op-amp circuit is characterized by linearity over the operable voltage range of the amplifier. Additionally, the op-amp circuit is capable of rail-to-rail input and output voltage swings. Furthermore, the op-amp circuit is capable of operating with a power supply voltage as low as two volts when fabricated in modern CMOS fabrication processes, without requiring special processing steps. An output circuit within the op-amp circuit is configured with pullup and pulldown devices which combine to provide output voltages throughout the operable range of the op-amp. However, when an output voltage equal to the power supply voltage is desired, the pulldown device substantially stops its pulldown current flow. Therefore, the pullup device charges the output conductor of the op-amp circuit fully to the power supply voltage.

Abstract: A voltage controlled oscillator circuit with a high power supply rejection ratio incorporates a clamping transistor with respect to each output terminal which limits the signal swing of the output terminal. The limited voltage swing allows relatively large movements in the power supply and ground voltages without causing significant changes in the frequency of the output signals. Such an oscillator circuit may be incorporated into an integrated circuit characterized by noisy power supply and ground conductors. Additionally, multiple delayed versions of the output frequency may be created using a level shifter circuit and a buffer circuit. The oscillator circuit is relatively quick to react to changes in the controlling voltage, adjusting the oscillation frequency in a relatively short time interval.

Abstract: An integrated circuit is presented having a driver circuit programmable to produce a variety of output voltages and conductive to the voltage levels of circuits interfaced by the integrated circuit. The integrated circuit includes programmable pullup and pulldown functions. The integrated circuit may be configured into an application having devices powered by a power supply voltage which is substantially larger than the voltage supplying the core section of the integrated circuit. Additionally, the present integrated circuit may be configured into other applications having devices powered by a power supply voltage substantially similar to the voltage supplying the integrated circuit core section. The present integrated circuit therefore retains utility for a large variety of applications. The pullup and pulldown transistors may be programmed to provide a resistive one, resistive zero, or neither.

Abstract: A switching scheme for driving a three-phase DC motor includes a first end of a first coil 20 coupled to a first end of a second coil 22 and a first end of a third coil 24. A first high side transistor 32 is coupled between a voltage source and a second end of the first coil 20. A second high side transistor 34 is coupled between the voltage source and a second end of the second coil 22. A third high side transistor 36 is coupled between the voltage source and a second end of the third coil 24. A first low side transistor 38 is coupled between the second end of the first coil 20 and a resistor 56. A second low side transistor 40 is coupled between the second end of the second coil 22 and the resistor 56. A third low side transistor 42 is coupled between the second end of the third coil 24 and the resistor 56. An output of a first low side driver 26 is coupled to a gate of the first low side transistor 38. An output of a second low side driver 28 is coupled to a gate of the second low side transistor 40.

Abstract: A voltage regulation circuit for use in "H" bridge circuit applications utilizes feedback networks to provide analog voltage regulation of the output nodes during switching of inductive loads. The regulation of the ouptut nodes during switching of inductive loads eliminates substrate current injection.