Abstract: A polymer electrolyte membrane of the present disclosure comprises a perfluorosulfonic acid resin (A), wherein the polymer electrolyte membrane has a phase-separation structure having a phase where fluorine atoms are detected in majority and a phase where carbon atoms are detected in majority, in an image of a membrane surface observed under an SEM-EDX, and the polymer electrolyte membrane has a phase having an average aspect ratio of 1.5 or more and 10 or less in an image of a membrane cross-section observed under an SEM.

Abstract: The present invention provides a polymer electrolyte membrane having excellent strength, a small dimensional change, and a low membrane resistance. The polymer electrolyte membrane includes a porous film having pores and a polymer electrolyte contained in the pores. The porous film is obtained by copolymerizing tetrafluoroethylene and an ethylenic comonomer to provide polytetrafluoroethylene and then stretching the polytetrafluoroethylene. The porous film has an average pore size of greater than 0.20 ?m.

Abstract: A polymer electrolyte membrane of the present disclosure comprises a perfluorosulfonic acid resin (A), wherein the polymer electrolyte membrane has a phase-separation structure having a phase where fluorine atoms are detected in majority and a phase where carbon atoms are detected in majority, in an image of a membrane surface observed under an SEM-EDX, and the polymer electrolyte membrane has a phase having an average aspect ratio of 1.5 or more and 10 or less in an image of a membrane cross-section observed under an SEM.

Abstract: The present invention provides a polymer electrolyte membrane having excellent strength, a small dimensional change, and a low membrane resistance. The polymer electrolyte membrane includes a porous film and a polymer electrolyte. The porous film has a fibril/node area ratio of 90/10 to 75/25.

Abstract: The present invention aims to provide an ionomer that can exhibit high oxygen permeability, especially under both low- and high-humidified conditions, and high power generation durability. The high oxygen permeable ionomer includes a specific repeating unit A and repeating unit B and has an equivalent weight of 250 to 930 and a glass transition temperature of 100° C. to 130° C.

Abstract: The present invention aims to provide an ionomer that can exhibit high oxygen permeability, especially under both low-and high-humidified conditions, and high power generation durability. The high oxygen permeable ionomer includes a specific repeating unit A and repeating unit B and has an equivalent weight of 250 to 930 and a glass transition temperature of 100° C. to 130° C.

Abstract: The present invention provides a polymer electrolyte membrane having excellent strength, a small dimensional change, and a low membrane resistance. The polymer electrolyte membrane includes a porous film and a polymer electrolyte. The porous film has a fibril/node area ratio of 90/10 to 75/25.

Abstract: The present invention provides a polymer electrolyte membrane having excellent strength, a small dimensional change, and a low membrane resistance. The polymer electrolyte membrane includes a porous film having pores and a polymer electrolyte contained in the pores. The porous film is obtained by copolymerizing tetrafluoroethylene and an ethylenic comonomer to provide polytetrafluoroethylene and then stretching the polytetrafluoroethylene. The porous film has an average pore size of greater than 0.20 ?m.

Abstract: Disclosed is a photosensitive resin composition comprising an alkali-soluble resin, wherein the dissolution rate of the alkali-soluble resin in an aqueous sodium carbonate solution is not less than 0.04 ?m/sec. When a photosensitive layer having a thickness of 30 ?m is formed by applying the photosensitive resin composition onto a base and removing the solvent by heating, and thus-obtained photosensitive layer is irradiated with an active ray of 1000 mJ/cm2 or less, the dissolution rate of the portion irradiated with the active ray in the photosensitive layer made of the photosensitive resin composition is not less than 0.22 ?m/sec and the film residual rate of the portion not irradiated with the active ray is not less than 90%.

Abstract: An object of the present invention is to provide a cationic curable composition which has low viscosity, can be rapidly photo-cured even in the air, has good adhesion to a substrate such as glass or resin, and is excellent in glass cleaner resistance and water resistance; an ink jet ink, a gravure ink and a hard coating material which comprise the composition; and cured products thereof. A cationic curable composition comprising: (A) 1 to 100 parts by weight of a phenol derivative having 3 or more aromatic rings per molecule, wherein the aromatic ring has a structure in which some or all of hydrogen atoms of phenolic hydroxyl groups of the aromatic ring are substituted by polymerizable functional groups; (B) 1 to 500 parts by weight of a cationic polymerizable compound; and (C) 0.05 to 20 parts by weight of a photo- and/or thermo-cationic initiator is provided.

Abstract: An object of the present invention is to provide a cationic curable composition which has low viscosity, can be rapidly photo-cured even in the air, has good adhesion to a substrate such as glass or resin, and is excellent in glass cleaner resistance and water resistance; an ink jet ink, a gravure ink and a hard coating material which comprise the composition; and cured products thereof. A cationic curable composition comprising: (A) 1 to 100 parts by weight of a phenol derivative having 3 or more aromatic rings per molecule, wherein the aromatic ring has a structure in which some or all of hydrogen atoms of phenolic hydroxyl groups of the aromatic ring are substituted by polymerizable functional groups; (B) 1 to 500 parts by weight of a cationic polymerizable compound; and (C) 0.05 to 20 parts by weight of a photo- and/or thermo-cationic initiator is provided.

Abstract: There is provided a photosensitive composition excellent in photo-curability which comprises an epoxy compound having two or more epoxy groups, a polynuclear phenol compound having a specific structure and an energy beam-sensitive cationic polymerization initiator, and optionally a predetermined percentage of a hydroxyl group-containing compound having one or more hydroxyl groups and one or more of at least one of a vinyl ether group and an oxetanyl group in a molecule, and a cured product of the same whose film is excellent in adhesion to various substrates, water resistance and flexibility.

Abstract: Disclosed is a photosensitive resin composition comprising an alkali-soluble resin, wherein the dissolution rate of the alkali-soluble resin in an aqueous sodium carbonate solution is not less than 0.04 ?m/sec. When a photosensitive layer having a thickness of 30 ?m is formed by applying the photosensitive resin composition onto a base and removing the solvent by heating, and thus-obtained photosensitive layer is irradiated with an active ray of 1000 mJ/cm2 or less, the dissolution rate of the portion irradiated with the active ray in the photosensitive layer made of the photosensitive resin composition is not less than 0.22 ?m/sec and the film residual rate of the portion not irradiated with the active ray is not less than 90%.

Abstract: There is provided a photosensitive composition excellent in photo-curability which comprises an epoxy compound having two or more epoxy groups, a polynuclear phenol compound having a specific structure and an energy beam-sensitive cationic polymerization initiator, and optionally a predetermined percentage of a hydroxyl group-containing compound having one or more hydroxyl groups and one or more of at least one of a vinyl ether group and an oxetanyl group in a molecule, and a cured product of the same whose film is excellent in adhesion to various substrates, water resistance and flexibility.

Abstract: A polishing fluid for metallic films, wherein the etching rate is 10 nm/min. or less, the polishing rate under a load of 10 KPa is 200 nm/min. or more, and the contrast, a ratio of the above-mentioned polishing rate to the etching rate, is 20 or more; and a method for producing a semiconductor substrate using the same.