Patents by Inventor Kuotang CHENG

Kuotang CHENG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • EXTREME ULTRAVIOLET MASK AND METHOD OF MANUFACTURING THE SAME
    Publication number: 20230367195
    Abstract: An extreme ultraviolet (EUV) mask includes a multilayer Mo/Si stack comprising alternating Mo and Si layers disposed over a first major surface of a mask substrate, a capping layer made of ruthenium (Ru) disposed over the multilayer Mo/Si stack, and an absorber layer on the capping layer. The EUV mask includes a circuit pattern area and a particle attractive area, and the capping layer is exposed at bottoms of patterns in the particle attractive area.
    Type: Application
    Filed: July 24, 2023
    Publication date: November 16, 2023
    Inventors: Chih-Tsung SHIH, Tsung-Chih CHIEN, Shih-Chi FU, Chi-Hua FU, Kuotang CHENG, Bo-Tsun LIU, Tsung Chuan LEE
  • Extreme ultraviolet mask and method of manufacturing the same
    Patent number: 11774844
    Abstract: An extreme ultraviolet (EUV) mask includes a multilayer Mo/Si stack comprising alternating Mo and Si layers disposed over a first major surface of a mask substrate, a capping layer made of ruthenium (Ru) disposed over the multilayer Mo/Si stack, and an absorber layer on the capping layer. The EUV mask includes a circuit pattern area and a particle attractive area, and the capping layer is exposed at bottoms of patterns in the particle attractive area.
    Type: Grant
    Filed: March 14, 2022
    Date of Patent: October 3, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chih-Tsung Shih, Tsung-Chih Chien, Shih-Chi Fu, Chi-Hua Fu, Kuotang Cheng, Bo-Tsun Liu, Tsung Chuan Lee
  • EXTREME ULTRAVIOLET MASK AND METHOD OF MANUFACTURING THE SAME
    Publication number: 20220197127
    Abstract: An extreme ultraviolet (EUV) mask includes a multilayer Mo/Si stack comprising alternating Mo and Si layers disposed over a first major surface of a mask substrate, a capping layer made of ruthenium (Ru) disposed over the multilayer Mo/Si stack, and an absorber layer on the capping layer. The EUV mask includes a circuit pattern area and a particle attractive area, and the capping layer is exposed at bottoms of patterns in the particle attractive area.
    Type: Application
    Filed: March 14, 2022
    Publication date: June 23, 2022
    Inventors: Chih-Tsung SHIH, Tsung-Chih CHIEN, Shih-Chi FU, Chi-Hua FU, Kuotang CHENG, Bo-Tsun LIU, Tsung Chuan LEE
  • Extreme ultraviolet mask and method of manufacturing the same
    Patent number: 11275301
    Abstract: An extreme ultraviolet (EUV) mask includes a multilayer Mo/Si stack comprising alternating Mo and Si layers disposed over a first major surface of a mask substrate, a capping layer made of ruthenium (Ru) disposed over the multilayer Mo/Si stack, and an absorber layer on the capping layer. The EUV mask includes a circuit pattern area and a particle attractive area, and the capping layer is exposed at bottoms of patterns in the particle attractive area.
    Type: Grant
    Filed: August 2, 2019
    Date of Patent: March 15, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chih-Tsung Shih, Tsung-Chih Chien, Shih-Chi Fu, Chi-Hua Fu, Kuotang Cheng, Bo-Tsun Liu, Tsung Chuan Lee
  • EXTREME ULTRAVIOLET MASK AND METHOD OF MANUFACTURING THE SAME
    Publication number: 20200073225
    Abstract: An extreme ultraviolet (EUV) mask includes a multilayer Mo/Si stack comprising alternating Mo and Si layers disposed over a first major surface of a mask substrate, a capping layer made of ruthenium (Ru) disposed over the multilayer Mo/Si stack, and an absorber layer on the capping layer. The EUV mask includes a circuit pattern area and a particle attractive area, and the capping layer is exposed at bottoms of patterns in the particle attractive area.
    Type: Application
    Filed: August 2, 2019
    Publication date: March 5, 2020
    Inventors: Chih-Tsung SHIH, Tsung-Chih CHIEN, Shih-Chi FU, Chi-Hua FU, Kuotang CHENG, Bo-Tsun LIU, Tsung Chuan LEE