Abstract: Described are structural electrode and structural batteries having high energy storage and high strength characteristics and methods of making the structural electrodes and structural batteries. The structural batteries provided can include a liquid electrolyte and carbon fiber-reinforced polymer electrodes comprising metallic tabs. The structural electrodes and structural batteries provided can be molded into a shape of a function component of a device such as ground vehicle or an aerial vehicle.

Abstract: Described are structural electrode and structural batteries having high energy storage and high strength characteristics and methods of making the structural electrodes and structural batteries. The structural batteries provided can include a liquid electrolyte and carbon fiber-reinforced polymer electrodes comprising metallic tabs. The structural electrodes and structural batteries provided can be molded into a shape of a function component of a device such as ground vehicle or an aerial vehicle.

Abstract: Described are structural electrode and structural batteries having high energy storage and high strength characteristics and methods of making the structural electrodes and structural batteries. The structural batteries provided can include a liquid electrolyte and carbon fiber-reinforced polymer electrodes comprising metallic tabs. The structural electrodes and structural batteries provided can be molded into a shape of a function component of a device such as ground vehicle or an aerial vehicle.

Abstract: Described are structural electrode and structural batteries having high energy storage and high strength characteristics and methods of making the structural electrodes and structural batteries. The structural batteries provided can include a liquid electrolyte and carbon fiber-reinforced polymer electrodes comprising metallic tabs. The structural electrodes and structural batteries provided can be molded into a shape of a function component of a device such as ground vehicle or an aerial vehicle.

Abstract: Described are structural electrode and structural batteries having high energy storage and high strength characteristics and methods of making the structural electrodes and structural batteries. The structural batteries provided can include a liquid electrolyte and carbon fiber-reinforced polymer electrodes comprising metallic tabs. The structural electrodes and structural batteries provided can be molded into a shape of a function component of a device such as ground vehicle or an aerial vehicle.

Abstract: The present disclosure is directed to structural supercapacitors and electrodes for structural supercapacitors having high energy storage and high mechanical characteristics and methods of making the structural supercapacitors and electrodes. The structural supercapacitors can include a solid electrolyte and carbon fiber electrodes comprising carbon nanotubes, surface functionalized redox-active moieties, and/or a conducting polymer.

Abstract: The present disclosure is directed to structural supercapacitors and electrodes for structural supercapacitors having high energy storage and high mechanical characteristics and methods of making the structural supercapacitors and electrodes. The structural supercapacitors can include a solid electrolyte and carbon fiber electrodes comprising carbon nanotubes, surface functionalized redox-active moieties, and/or a conducting polymer.

Abstract: The present disclosure is directed to structural supercapacitors and electrodes for structural supercapacitors having high energy storage and high mechanical characteristics and methods of making the structural supercapacitors and electrodes. The structural supercapacitors can include a solid electrolyte and carbon fiber electrodes comprising carbon nanotubes, surface functionalized redox-active moieties, and/or a conducting polymer.

Abstract: The present disclosure is directed to structural supercapacitors and electrodes for structural supercapacitors having high energy storage and high mechanical characteristics and methods of making the structural supercapacitors and electrodes. The structural supercapacitors can include a solid electrolyte and carbon fiber electrodes comprising carbon nanotubes, surface functionalized redox-active moieties, and/or a conducting polymer.

Abstract: Concepts and methods are provided to reduce the cost and complexity of thin film battery (TFB) high volume manufacturing by eliminating and/or minimizing the use of conventional physical (shadow) masks. Laser scribing and other alternative physical maskless patterning techniques meet certain or all of the patterning requirements. In one embodiment, a method of manufacturing thin film batteries comprises providing a substrate, depositing layers corresponding to a thin film battery structure on the substrate, the layers including, in order of deposition, a cathode, an electrolyte and an anode, wherein at least one of the deposited layers is unpatterned by a physical mask during deposition, depositing a protective coating, and scribing the layers and the protective coating. Further, the edges of the layers may be covered by an encapsulation layer. Furthermore, the layers may be deposited on two substrates and then laminated to form the thin film battery.

Abstract: Concepts and methods are provided to reduce the cost and complexity of thin film battery (TFB) high volume manufacturing by eliminating and/or minimizing the use of conventional physical (shadow) masks. Laser scribing and other alternative physical maskless patterning techniques meet certain or all of the patterning requirements. In one embodiment, a method of manufacturing thin film batteries comprises providing a substrate, depositing layers corresponding to a thin film battery structure on the substrate, the layers including, in order of deposition, a cathode, an electrolyte and an anode, wherein at least one of the deposited layers is unpatterned by a physical mask during deposition, depositing a protective coating, and scribing the layers and the protective coating. Further, the edges of the layers may be covered by an encapsulation layer. Furthermore, the layers may be deposited on two substrates and then laminated to form the thin film battery.

Abstract: High quality epitaxial layers of compound semiconductor materials can be grown overlying large silicon wafers by first growing an accommodating buffer layer on a silicon wafer. The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer.

Abstract: Circuit (10) has a dual layer gate dielectric (29) formed over a semiconductor substrate (14). The gate dielectric includes an amorphous layer (40) and a monocrystalline layer (42). The monocrystalline layer typically has a higher dielectric constant than the amorphous layer.

Abstract: High quality epitaxial layers of compound semiconductor materials can be grown overlying large silicon wafers by first growing an accommodating buffer layer on a silicon wafer. The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer.

Abstract: Circuit (10) has a dual layer gate dielectric (29) formed over a semiconductor substrate (14). The gate dielectric includes an amorphous layer (40) and a monocrystalline layer (42). The monocrystalline layer typically has a higher dielectric constant than the amorphous layer.

Abstract: A high quality epitaxial layer of monocrystalline Pb(Zr,Ti)O3 can be grown overlying large silicon wafers by first growing an strontium titanate layer on a silicon wafer. The strontium titanate layer is a monocrystalline layer spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide.

Abstract: High quality epitaxial layers of compound semiconductor materials can be grown overlying large silicon wafers by first growing an accommodating buffer layer on a silicon wafer. The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline compound semiconductor layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer.

Abstract: High quality epitaxial layers of compound semiconductor materials can be grown overlying large silicon wafers by first growing an accommodating buffer layer on a silicon wafer. The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer.

Abstract: High quality epitaxial layers of piezoelectric material materials can be grown overlying large silicon wafers by first growing an accommodating buffer layer on a silicon wafer. The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer.

Abstract: A high quality epitaxial layer of monocrystalline Pb(Mg,Nb)O3—PbTiO3 or Pb(Mg1−xNbx)O3—PbTiO3 can be grown overlying large silicon wafers by first growing an strontium titanate layer on a silicon wafer. The strontium titanate layer is a monocrystalline layer spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide.