Abstract: Methods and apparatuses for controlling aerosol streams being deposited onto a substrate via pneumatic shuttering. The aerosol stream is surrounded and focused by an annular co-flowing sheath gas in the print head of the apparatus. A boost gas flows to a vacuum pump during printing of the aerosol. A valve adds the boost gas to the sheath gas at the appropriate time, and a portion of the two gases is deflected in a direction opposite to the aerosol flow direction to at least partially prevent the aerosol from passing through the deposition nozzle. Some or all of the aerosol is combined with that portion of the boost gas and sheath gas and is exhausted from the print head. By precisely balancing the flows into and out of the print head, maintaining the flow rates of the aerosol and sheath gas approximately constant, and keeping the boost gas flowing during both printing and shuttering, the transition time between printing and partial or full shuttering of the aerosol stream is minimized.

Abstract: Methods and apparatuses for controlling aerosol streams being deposited onto a substrate via pneumatic shuttering. The aerosol stream is surrounded and focused by an annular co-flowing sheath gas in the print head of the apparatus. A boost gas flows to a vacuum pump during printing of the aerosol. A valve adds the boost gas to the sheath gas at the appropriate time, and a portion of the two gases is deflected in a direction opposite to the aerosol flow direction to at least partially prevent the aerosol from passing through the deposition nozzle. Some or all of the aerosol is combined with that portion of the boost gas and sheath gas and is exhausted from the print head. By precisely balancing the flows into and out of the print head, maintaining the flow rates of the aerosol and sheath gas approximately constant, and keeping the boost gas flowing during both printing and shuttering, the transition time between printing and partial or full shuttering of the aerosol stream is minimized.

Abstract: Methods and apparatuses for controlling aerosol streams being deposited onto a substrate via pneumatic shuttering. The aerosol stream is surrounded and focused by an annular co-flowing sheath gas in the print head of the apparatus. A boost gas flows to a vacuum pump during printing of the aerosol. A valve adds the boost gas to the sheath gas at the appropriate time, and a portion of the two gases is deflected in a direction opposite to the aerosol flow direction to at least partially prevent the aerosol from passing through the deposition nozzle. Some or all of the aerosol is combined with that portion of the boost gas and sheath gas and is exhausted from the print head. By precisely balancing the flows into and out of the print head, maintaining the flow rates of the aerosol and sheath gas approximately constant, and keeping the boost gas flowing during both printing and shuttering, the transition time between printing and partial or full shuttering of the aerosol stream is minimized.

Abstract: Methods and apparatuses for controlling aerosol streams being deposited onto a substrate via pneumatic shuttering. The aerosol stream is surrounded and focused by an annular co-flowing sheath gas in the print head of the apparatus. A boost gas flows to a vacuum pump during printing of the aerosol. A valve adds the boost gas to the sheath gas at the appropriate time, and a portion of the two gases is deflected in a direction opposite to the aerosol flow direction to at least partially prevent the aerosol from passing through the deposition nozzle. Some or all of the aerosol is combined with that portion of the boost gas and sheath gas and is exhausted from the print head. By precisely balancing the flows into and out of the print head, maintaining the flow rates of the aerosol and sheath gas approximately constant, and keeping the boost gas flowing during both printing and shuttering, the transition time between printing and partial or full shuttering of the aerosol stream is minimized.

Abstract: A system for processing one or more substrates according to the present invention includes a diversion valve that can deliver two or more process fluids to a dispensing device through a common line/pipe. The present invention also includes related methods.

Abstract: A process is provided for treating a semiconductor wafer at a target wafer temperature. This process includes the following steps: a) determining the target wafer temperature of the semiconductor wafer during a given wafer treatment process step; b) providing a treatment chamber having at least one semiconductor wafer disposed therein; c) dispensing water vapor into the treatment chamber in an amount to provide the chamber with an atmospheric environment having a dew point sufficiently close to the target wafer temperature to provide a temperature regulating effect; and d) initiating the given wafer treatment process step when the atmospheric environment of the treatment chamber is at the dew point of step c).

Abstract: A process is provided for treating a semiconductor wafer at a target wafer temperature. This process includes the following steps: a) determining the target wafer temperature of the semiconductor wafer during a given wafer treatment process step; b) providing a treatment chamber having at least one semiconductor wafer disposed therein; c) dispensing water vapor into the treatment chamber in an amount to provide the chamber with an atmospheric environment having a dew point sufficiently close to the target wafer temperature to provide a temperature regulating effect; and d) initiating the given wafer treatment process step when the atmospheric environment of the treatment chamber is at the dew point of step c).

Abstract: A system for processing one or more substrates according to the present invention includes a diversion valve that can deliver two or more process fluids to a dispensing device through a common line/pipe. The present invention also includes related methods.

Abstract: Described are methods of rinsing and processing devices such as semiconductor wafers wherein the device is rinsed with using a surface tension reducing agent; the method may include a subsequent drying step which preferably incorporates the use of a surface tension reducing agent during at least partial drying; and the method may be performed using automated rinsing equipment; also described are automated rinsing apparatuses useful with the method.

Abstract: An immersion processing system is provided for cleaning wafers with an increased efficiency of chemical use. Such a system advantageously uses less cleaning enhancement substance that may be provided as gas, vapor or liquid directly to a meniscus or wafer/liquid/gas bath interface so as to effectively modify surface tensions at the meniscus with minimized chemical usage. Such a delivery system design may be applied for single wafer processing or for processing multiple wafers together within a single liquid bath vessel. For single wafer processing, in particular, cleaning enhancement substance can be delivered along one or both major sides of the wafer, preferably at the meniscus that is formed as the wafer and liquid are relatively moved, while a processing vessel usable for such single wafer processing may itself be designed with a minimized size to accommodate a single wafer.

Abstract: A process for etching high dielectric constant (high-k) films (e.g., ZrzSiyOx, HfzSiyOx, ZrzHfyOx, HfzAlyOx, and ZrzAlyOx) more rapidly than coexisting SiO2, polysilicon, silicon and/or other films is disclosed. The process comprises contacting the films with an aqueous solution comprising a fluoride containing species at a concentration sufficiently dilute to achieve a desired selective etch of the high-k film. The etching solution is preferably used above ambient temperature to further increase the etch selectivity of the high-k films relative to coexisting SiO2 and/or other films. The etch rate of the solution can also be adjusted by controlling the pH of the etching solution, e.g., by the addition of other acids or bases to the solution (for example, HCl or NH4OH).

Abstract: An immersion processing system is provided for cleaning wafers with an increased efficiency of chemical use. Such a system advantageously uses less cleaning enhancement substance that may be provided as gas, vapor or liquid directly to a meniscus or wafer/liquid/gas bath interface so as to effectively modify surface tensions at the meniscus with minimized chemical usage. Such a delivery system design may be applied for single wafer processing or for processing multiple wafers together within a single liquid bath vessel. For single wafer processing, in particular, cleaning enhancement substance can be delivered along one or both major sides of the wafer, preferably at the meniscus that is formed as the wafer and liquid are relatively moved, while a processing vessel usable for such single wafer processing may itself be designed with a minimized size to accommodate a single wafer.

Abstract: Improved immersion vessel configurations for treatment of precision manufactured devices such as semiconductor wafers are provided. In one aspect, an immersion vessel is provided wherein the sidewalls of the immersion vessel are less than about 10 mm from the major surfaces of the wafer or wafers. In another aspect, an immersion vessel provided with a megasonic transducer has a cleaning zone that is progressively smaller in width from the area proximal to the transducer to the area that is distal from the transducer. In another aspect, an immersion vessel is provided having at least one movable sidewall to provide variable volume capacity of liquid in the vessel. In another aspect, a self-cleaning wafer liquid treatment system is provided having a plurality of cascade chambers.

Abstract: A process for etching high dielectric constant (high-k) films (e.g., ZrzSiyOx, HfzSiyOx, ZrzHfyOx, HfzAlyOx, and ZrzAlyOx) more rapidly than coexisting SiO2, polysilicon, silicon and/or other films is disclosed. The process comprises contacting the films with an aqueous solution comprising a fluoride containing species at a concentration sufficiently dilute to achieve a desired selective etch of the high-k film. The etching solution is preferably used above ambient temperature to further increase the etch selectivity of the high-k films relative to coexisting SiO2 and/or other films. The etch rate of the solution can also be adjusted by controlling the pH of the etching solution, e.g., by the addition of other acids or bases to the solution (for example, HCl or NH4OH).

Abstract: A method for increasing the quantity of a gas, e.g., ozone, dissolved in a liquid, e.g., ultrapure deionized water, is provided. The gas to be dissolved is introduced to the liquid under pressure and the resulting admixture delivered to the end-use station under pressure. Thus, the method and system of the present invention are able to provide, e.g., ozonated water, continuously, efficiently and without cooling, thus providing a simple, cost efficient method of producing high concentration ozonated water for application to an in-process semiconductor wafer.

Abstract: A method and system for increasing the quantity of a gas, e.g., ozone, dissolved in a liquid, e.g., ultrapure deionized water, are provided. The gas to be dissolved is introduced to the liquid under pressure and the resulting admixture delivered to the end-use station under pressure Once at the end-use station, the admixture comprising the liquid and dissolved gas is subjected to controlled dispensing. Thus, the method and system of the present invention are able to provide, e.g., ozonated water, continuously, efficiently and without cooling, thus providing a simple, cost efficient method of producing high concentration ozonated water.

Abstract: A method for increasing the quantity of a gas, e.g., ozone, dissolved in a liquid, e.g., ultrapure deionized water, are provided. The gas to be dissolved is introduced to the liquid under pressure and the resulting admixture delivered to the end-use station under pressure. Once at the end-use station, the admixture including the liquid and dissolved gas is subjected to controlled dispensing to maintain a high concentration of gas in the dispensed admixture.

Abstract: Described are methods of rinsing and processing devices such as semiconductor wafers wherein the device is rinsed with using a surface tension reducing agent; the method may include a subsequent drying step which preferably incorporates the use of a surface tension reducing agent during at least partial drying; and the method may be performed using automated rinsing equipment; also described are automated rinsing apparatuses useful with the method.

Abstract: The present invention provides a method for treating a substrate, or a plurality of substrates, so that the treatment thereof is enhanced. In particular, the method includes the steps of causing a heated liquid to contact the substrate(s) and causing a processing liquid to contact the substrate(s). Although the processing liquid comprises a heat sensitive agent, the effectiveness of the processing liquid is not substantially diminished by the application of heat due to the fact that the heat is applied by the application of a separate heated liquid rather than by heating the processing liquid itself. Thus, the application of heat can be utilized to enhance the treatment rate of a substrate surface without a corresponding reduction in effectiveness of the processing liquid.

Abstract: A centrifugal spray processor for dispensing a stream of ozonated water toward one or more semiconductor wafers at a non-parallel angle that is inclined from the plane of the surface of the semiconductor wafer. The spray processor includes one or more supports for receiving a plurality of semiconductor wafers and a spray post for dispensing ozonated water from a reservoir onto the semiconductor wafers. The spray post includes a plurality of nozzles that are configured to dispense ozonated water at a generally downward angle toward the surface of the semiconductor wafer. The angle of incidence of the stream of ozonated water from the spray post as measured from the plane of the semiconductor is greater than 0 degrees, and is preferably greater than about 0 degrees and less than or equal to about 30 degrees depending upon the configuration of the spray post and the semiconductor wafers.