Patents by Inventor Kurt L. Haller
Kurt L. Haller has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10551320Abstract: Methods and systems for detecting a particle defect on a wafer surface, transforming the particle to a spectroscopically active state, and identifying a material composition of the activated particle by a spectroscopic technique are described herein. Particle defects are transformed by chemical treatment, thermal treatment, photochemical treatment, or a combination thereof, such that an activated particle exhibits atomic vibrational bands that can be observed spectroscopically. In one embodiment, a surface inspection system detects the presence of a particle defect on a wafer surface, activates observable Raman bands in one or more of the detected particles, and identifies the material composition of the activated particle by a spectroscopic technique.Type: GrantFiled: January 30, 2017Date of Patent: February 4, 2020Assignee: KLA-Tencor CorporationInventor: Kurt L. Haller
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Publication number: 20180217065Abstract: Methods and systems for detecting a particle defect on a wafer surface, transforming the particle to a spectroscopically active state, and identifying a material composition of the activated particle by a spectroscopic technique are described herein. Particle defects are transformed by chemical treatment, thermal treatment, photochemical treatment, or a combination thereof, such that an activated particle exhibits atomic vibrational bands that can be observed spectroscopically. In one embodiment, a surface inspection system detects the presence of a particle defect on a wafer surface, activates observable Raman bands in one or more of the detected particles, and identifies the material composition of the activated particle by a spectroscopic technique.Type: ApplicationFiled: January 30, 2017Publication date: August 2, 2018Inventor: Kurt L. Haller
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Patent number: 9194812Abstract: The disclosure is directed to a system and method of managing illumination energy applied to illuminated portions of a scanned wafer to mitigate illumination-induced damage without unnecessarily compromising SNR of an inspection system. The wafer may be rotated at a selected spin frequency for scanning wafer defects utilizing the inspection system. Illumination energy may be varied over at least one scanned region of the wafer as a function of radial distance of an illuminated portion from the center of the wafer and the selected spin frequency of the wafer. Illumination energy may be further applied constantly over one or more scanned regions of the wafer beyond a selected distance from the center of the wafer.Type: GrantFiled: July 21, 2014Date of Patent: November 24, 2015Assignee: KLA-Tencor CorporationInventors: Christian Wolters, Aleksey Petrenko, Kurt L. Haller, Juergen Reich, Zhiwei Xu, Stephen Biellak, George Kren
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Publication number: 20140328043Abstract: The disclosure is directed to a system and method of managing illumination energy applied to illuminated portions of a scanned wafer to mitigate illumination-induced damage without unnecessarily compromising SNR of an inspection system. The wafer may be rotated at a selected spin frequency for scanning wafer defects utilizing the inspection system. Illumination energy may be varied over at least one scanned region of the wafer as a function of radial distance of an illuminated portion from the center of the wafer and the selected spin frequency of the wafer. Illumination energy may be further applied constantly over one or more scanned regions of the wafer beyond a selected distance from the center of the wafer.Type: ApplicationFiled: July 21, 2014Publication date: November 6, 2014Inventors: Christian Wolters, Aleksey Petrenko, Kurt L. Haller, Juergen Reich, Zhiwei Xu, Stephen Biellak, George Kren
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Patent number: 8786850Abstract: The disclosure is directed to a system and method of managing illumination energy applied to illuminated portions of a scanned wafer to mitigate illumination-induced damage without unnecessarily compromising SNR of an inspection system. The wafer may be rotated at a selected spin frequency for scanning wafer defects utilizing the inspection system. Illumination energy may be varied over at least one scanned region of the wafer as a function of radial distance of an illuminated portion from the center of the wafer and the selected spin frequency of the wafer. Illumination energy may be further applied constantly over one or more scanned regions of the wafer beyond a selected distance from the center of the wafer.Type: GrantFiled: October 29, 2012Date of Patent: July 22, 2014Assignee: KLA-Tencor CorporationInventors: Christian Wolters, Aleksey Petrenko, Kurt L. Haller, Juergen Reich, Zhiwei Xu, Stephen Biellak, George Kren
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Patent number: 7697129Abstract: Systems and methods for inspecting a wafer with increased sensitivity are provided. One system includes an inspection subsystem configured to direct light to a spot on the wafer and to generate output signals responsive to light scattered from the spot on the wafer. The system also includes a gas flow subsystem configured to replace a gas located proximate to the spot on the wafer with a medium that scatters less of the light than the gas thereby increasing the sensitivity of the system. In addition, the system includes a processor configured to detect defects on the wafer using the output signals.Type: GrantFiled: December 14, 2006Date of Patent: April 13, 2010Assignee: KLA-Tencor Technologies Corp.Inventors: Kurt L. Haller, David Shortt, Christian Wolters
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Publication number: 20090009754Abstract: One system includes an inspection subsystem configured to direct light to a spot on the wafer and to generate output signals responsive to light scattered from the spot on the wafer. The system also includes a gas flow subsystem configured to replace a gas located proximate to the spot on the wafer with a medium that scatters less of the light than the gas thereby increasing the sensitivity of the system. In addition, the system includes a processor configured to detect defects on the wafer using the output signals.Type: ApplicationFiled: December 14, 2006Publication date: January 8, 2009Applicant: KLA-TENCOR TECHNOLOGIES CORPORATIONInventors: Kurt L. Haller, David Shortt, Christian Wolters
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Patent number: 7436505Abstract: Computer-implemented methods and systems for determining a configuration for a light scattering inspection system are provided. One computer-implemented method includes determining a three-dimensional map of signal-to-noise ratio values for data that would be acquired for a specimen and a potential defect on the specimen by the light scattering inspection system across a scattering hemisphere of the inspection system. The method also includes determining one or more portions of the scattering hemisphere in which the signal-to-noise ratio values are higher than in other portions of the scattering hemisphere based on the three-dimensional map. In addition, the method includes determining a configuration for a detection subsystem of the inspection system based on the one or more portions of the scattering hemisphere.Type: GrantFiled: April 4, 2006Date of Patent: October 14, 2008Assignee: KLA-Tencor Technologies Corp.Inventors: Alexander Belyaev, Daniel Kavaldjiev, Amith Murali, Aleksey Petrenko, Mike D. Kirk, David Shortt, Brian L. Haas, Kurt L. Haller
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Patent number: 7372559Abstract: Systems and methods for inspecting a wafer with increased sensitivity are provided. One system includes an inspection subsystem configured to direct light to a spot on the wafer and to generate output signals responsive to light scattered from the spot on the wafer. The system also includes a gas flow subsystem configured to replace a gas located proximate to the spot on the wafer with a medium that scatters less of the light than the gas thereby increasing the sensitivity of the system. In addition, the system includes a processor configured to detect defects on the wafer using the output signals.Type: GrantFiled: December 14, 2005Date of Patent: May 13, 2008Assignee: KLA-Tencor Technologies Corp.Inventors: Kurt L. Haller, David Shortt, Christian Wolters
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Patent number: 5387777Abstract: Contamination levels in plasma processes are reduced during plasma processing, by prevention of formation of particles, by preventing entry of particles externally introduced or by removing particles spontaneously formed from chemical and/or mechanical sources. Some techniques for prevention of formation of particles include interruption of the plasma by pulsing the source of plasma energy periodically, or application of energy to provide mechanical agitation such as mechanical shockwaves, acoustic stress, ultrasonic stress, vibrational stress, thermal stress, and pressure stress. Following a period of applied stress, a tool is pumped out (if a plasma is used, the glow is first discontinued), vented, opened and flaked or particulate material is cleaned from the lower electrode and other surfaces. A burst of filtered air or nitrogen, or a vacuum cleaner is used for removal of deposition debris while the vented tool is open. Following this procedure, the tool is then be used for product runs.Type: GrantFiled: June 24, 1992Date of Patent: February 7, 1995Assignee: International Business Machines CorporationInventors: Reid S. Bennett, Albert R. Ellingboe, George G. Gifford, Kurt L. Haller, John S. McKillop, Gary S. Selwyn, Jyothi Singh
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Patent number: 5367139Abstract: Contamination levels in plasma processes are reduced during plasma processing, by prevention of formation of particles, by preventing entry of particles externally introduced or by removing particles spontaneously formed from chemical and/or mechanical sources. Some techniques for prevention of formation of particles include interruption of the plasma by pulsing the source of plasma energy periodically, or application of energy to provide mechanical agitation such as mechanical shockwaves, acoustic stress, ultrasonic stress, vibrational stress, thermal stress, and pressure stress. Following a period of applied stress, a tool is pumped out (if a plasma is used, the glow is first discontinued), vented, opened and flaked or particulate material is cleaned from the lower electrode and other surfaces. A burst of filtered air or nitrogen, or a vacuum cleaner is used for removal of deposition debris while the vented tool is open.Type: GrantFiled: October 23, 1989Date of Patent: November 22, 1994Assignee: International Business Machines CorporationInventors: Reid S. Bennett, Albert R. Ellingboe, George G. Gifford, Kurt L. Haller, John S. McKillop, Gary S. Selwyn, Jyothi Singh
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Patent number: 5298720Abstract: A process chamber having voltage driven electrodes, e.g. plasma chamber, can be made self cleaning of particle contamination by appropriate design of the workpiece or electrode surface to provide protuberances, grooves or tapers thereon which result in a predetermined pattern in the electrostatic potential within the process chamber which can trap particulate contamination in preselected regions within the plasma chamber. These particles can then be channeled out of the process chamber through a pump port.Type: GrantFiled: April 25, 1990Date of Patent: March 29, 1994Assignee: International Business Machines CorporationInventors: Jerome J. Cuomo, Michael V. Grazioso, Charles R. Guarnieri, Kurt L. Haller, John E. Heidenreich, III, Gary S. Selwyn, Stanley J. Whitehair
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Patent number: 5255089Abstract: A portable particle detector assembly for detecting particle contamination in the reaction chamber of a plasma processing tool used in semiconductor manufacture. The detector is comprised of a scanner assembly for providing a scanned laser beam and a video camera placed opposite the scanner assembly for monitoring light scattered by particles within the volume of the reaction chamber.Type: GrantFiled: March 26, 1992Date of Patent: October 19, 1993Assignee: International Business Machines CorporationInventors: David E. Dybas, Kurt L. Haller, Edward F. Patterson, Gary S. Selwyn