Patents by Inventor Kurt N. Kimber

Kurt N. Kimber has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7817391
    Abstract: An over-current protection device for use in a switched mode power supply prevents over-current conditions caused by short-circuits faults. The over-current protection device monitors a current in the switched mode power supply, and in particular, determines a peak current value associated with the monitored current. The monitored current is compared to a reference value to determine whether an over-current condition exists. If an over-current condition is detected, then the over-current protection device modifies the ‘off’ time of the switched mode power supply based on the determined peak current value.
    Type: Grant
    Filed: April 26, 2007
    Date of Patent: October 19, 2010
    Assignee: Polar Semiconductor, Inc.
    Inventor: Kurt N. Kimber
  • Publication number: 20080266738
    Abstract: An over-current protection device for use in a switched mode power supply prevents over-current conditions caused by short-circuits faults. The over-current protection device monitors a current in the switched mode power supply, and in particular, determines a peak current value associated with the monitored current. The monitored current is compared to a reference value to determine whether an over-current condition exists. If an over-current condition is detected, then the over-current protection device modifies the ‘off’ time of the switched mode power supply based on the determined peak current value.
    Type: Application
    Filed: April 26, 2007
    Publication date: October 30, 2008
    Applicant: Polar Semiconductor, Inc.
    Inventor: Kurt N. Kimber
  • Patent number: 7071533
    Abstract: An antifuse device is constructed from a bipolar junction transistor (BJT). The BJT includes a collector, a base, and an emitter. In one embodiment the BJT is formed inherently within a field effect transistor (FET), including a first doped region, a second doped region, a gate, and a body region. The collector of the BJT is realized by the first doped region of the FET, the emitter of the BJT is realized by the second doped region of the FET, and the base of the BJT is realized by the body region. A high resistance path exists between the collector and the base. A first input voltage is connected to the collector and a second input voltage is connected to the base. A switch connects the emitter to a fixed potential when the switch is closed.
    Type: Grant
    Filed: February 4, 2005
    Date of Patent: July 4, 2006
    Assignee: Polar Semiconductor, Inc.
    Inventors: Kurt N. Kimber, David D. Litfin, Joseph Burkhardt, Steven L. Kosier
  • Patent number: 5825168
    Abstract: The present invention is a circuit for producing an output voltage as a function of a first input voltage and a second input voltage. The circuit includes a first emitter-coupled transistor pair for receiving the first and second input voltages. The circuit further includes a compensation circuit coupled to receive the first and the second input voltage signals. The compensation circuit generates a compensation current that is at least partially based on a relative difference between the first and the second input voltage signals. The compensation circuit is coupled to the first emitter-coupled transistor pair such that the compensation circuit provides the compensation current to the first emitter-coupled transistor pair. The output signal is representative of either the first or the second input voltage.
    Type: Grant
    Filed: June 13, 1997
    Date of Patent: October 20, 1998
    Assignee: VTC, Inc.
    Inventor: Kurt N. Kimber