Patents by Inventor Kurt O. Taylor

Kurt O. Taylor has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7205165
    Abstract: The present invention is generally directed to various methods for determining the reliability of dielectric layers. In one illustrative embodiment, the method comprises providing a device having a dielectric layer, applying a plurality of constant voltage pulses to the device and measuring a current through the dielectric layer after one or more of the constant voltage pulses has been applied.
    Type: Grant
    Filed: September 18, 2003
    Date of Patent: April 17, 2007
    Assignee: Advanced Micro Devices, Inc.
    Inventors: Akram Ali Salman, Xuejun Zhao, Kurt O. Taylor, Stephen G. Beebe
  • Patent number: 6514802
    Abstract: A method for making frontside contact to a substrate through an SOI structure thereon is provided. An etching step is undertaken to form a trench in the SOI structure so as to expose and define a rug surface of the substrate. Then, a thin insulating layer, for example SiO2, is formed over the exposed surface of the substrate, this insulating layer being irregular because of its formation over the relatively rough etched surface. Contact material is provided in the trench, and electrical potential is applied across the contact and substrate sufficient to increase the conductivity of the insulating layer, i.e., to break down the insulating layer. Nitrogen may be implanted into the exposed surface of the substrate to slow subsequent growth of the insulating layer, resulting in an even thinner insulating layer, i.e., one even less resistant to breakdown upon application of electrical potential thereacross.
    Type: Grant
    Filed: January 22, 2002
    Date of Patent: February 4, 2003
    Assignee: Advanced Micro Devices, Inc.
    Inventors: Todd P. Lukanc, Kurt O. Taylor
  • Publication number: 20020094666
    Abstract: A method for making frontside contact to a substrate through an SOI structure thereon is provided. An etching step is undertaken to form a trench in the SOI structure so as to expose and define a rough surface of the substrate. Then, a thin insulating layer, for example SiO2 is formed over the exposed surface of the substrate, this insulating layer being irregular because of its formation over the relatively rough etched surface. Contact material is provided in the trench, and electrical potential is applied across the contact and substrate sufficient to increase the conductivity of the insulating layer, i.e., to break down the insulating layer. Nitrogen may be implanted into the exposed surface of the substrate to slow subsequent growth of the insulating layer, resulting in an even thinner insulating layer, i.e., one even less resistant to breakdown upon application of electrical potential thereacross.
    Type: Application
    Filed: January 22, 2002
    Publication date: July 18, 2002
    Inventors: Todd P. Lukanc, Kurt O. Taylor
  • Patent number: 6362524
    Abstract: A metal edge seal ring is formed in a trench made up of a large number of short, connected legs in perpendicular relation. Metal is deposited in the trench, and because the metal is comprised of many short segments rather than several long, straight sections, the subsequent chemical-mechanical polishing step does not cause significant cupping of the metal in the trench.
    Type: Grant
    Filed: July 26, 2000
    Date of Patent: March 26, 2002
    Assignee: Advanced Micro Devices, Inc.
    Inventors: Richard C. Blish, Kurt O. Taylor, David C. Greenlaw
  • Patent number: 6355511
    Abstract: A method for making frontside contact to a substrate through an SOI structure thereon is provided. An etching step is undertaken to form a trench in the SOI structure so as to expose and define a rough surface of the substrate. Then, a thin insulating layer, for example SiO2, is formed over the exposed surface of the substrate, this insulating layer being irregular because of its formation over the relatively rough etched surface. Contact material is provided in the trench, and electrical potential is applied across the contact and substrate sufficient to increase the conductivity of the insulating layer, i.e., to break down the insulating layer. Nitrogen may be implanted into the exposed surface of the substrate to slow subsequent growth of the insulating layer, resulting in an even thinner insulating layer, i.e., one even less resistant to breakdown upon application of electrical potential thereacross.
    Type: Grant
    Filed: June 16, 2000
    Date of Patent: March 12, 2002
    Assignee: Advanced Micro Devices, Inc.
    Inventors: Todd P. Lukanc, Kurt O. Taylor