Patents by Inventor Kurt P. Scharnhorst

Kurt P. Scharnhorst has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5047387
    Abstract: There is disclosed herein an invention for beneficiation of powered material having superconducting characteristics and processes for carrying it out. The invention involves introducing powdered superconducting material into the vertical field of a magnet wherein particles thereof are levitated according to the Meissner Effect. Particles which are more superconducting levitate at higher elevations or states above the magnet than do particles containing phases that are non-superconducting. Particles that are non-superconducting do not react at all in the magnetic field. Levitated particles are selectively harvested from whatever states desired.
    Type: Grant
    Filed: January 19, 1988
    Date of Patent: September 10, 1991
    Assignee: The United States of America as represented by the Secretary of the Navy
    Inventors: Inna G. Talmy, Curtis A. Martin, Kurt P. Scharnhorst
  • Patent number: 4249421
    Abstract: The shear absorption of a viscoelastic material is determined by directing acoustical energy at the viscoelastic material and sampling the backscattered signals that result when compressional waves propagate through the material and are scattered by either a fluid-filled or evacuated cavity contained therein. The backscattered signals are converted to a resonance amplitude versus frequency domain and the shear absorption of the viscoelastic material is determined from the frequency and the half-width of the resonance peaks.
    Type: Grant
    Filed: October 22, 1979
    Date of Patent: February 10, 1981
    Assignee: The United States of America as represented by the Secretary of the Navy
    Inventors: Guillermo C. Gaunaurd, Herbert M. berall, Kurt P. Scharnhorst
  • Patent number: 4224520
    Abstract: An amorphous film (44) of a photoresponsive semi-conducting material such germanium-telluride deposited upon a thick silicon dioxide layer (40) formed on a silicon chip substrate (38). The silicon chip (38) underlying the central region of the amorphous film (44) is etched through to the silicon dioxide layer (40) to define a trough (48) thermally isolating the central region of the silicon dioxide layer (40).
    Type: Grant
    Filed: July 13, 1979
    Date of Patent: September 23, 1980
    Assignee: The United States of America as represented by the Secretary of the Navy
    Inventors: Richard F. Greene, Kurt P. Scharnhorst