Abstract: A method of forming an image in a photoresist layer. The method includes, providing a substrate; forming the photoresist layer over the substrate; forming a contamination gettering topcoat layer over the photoresist layer, the contamination gettering topcoat layer including one or more polymers and one or more cation complexing agents; exposing the photoresist layer to actinic radiation through a photomask having opaque and clear regions, the opaque regions blocking the actinic radiation and the clear regions being transparent to the actinic radiation, the actinic radiation changing the chemical composition of regions of the photoresist layer exposed to the radiation forming exposed and unexposed regions in the photoresist layer; and removing either the exposed regions of the photoresist layer or the unexposed regions of the photoresist layer. The contamination gettering topcoat layer includes one or more polymers, one or more cation complexing agents and a casting solvent.

Abstract: A structure and method for removing and recovering an anodically bonded glass device from a substrate using a metal interlayer interposed between the glass and the substrate is provided. As used in semiconductor mask fabrication, the structure comprises a silicon wafer substrate coated with a membrane on which a metal interlayer is disposed. The metal interlayer and a glass device are anodically bonded together. Recovery of the glass device is accomplished by chemically and mechanically removing the wafer and its membrane from the metal interlayer. The membrane is preferably removed using reactive ion etching to which the metal interlayer is resistant. The metal interlayer is then removed from the glass device using a highly corrosive chemical solution. The recovered glass device may then be reused.

Abstract: An damascene x-ray mask comprises an oxide membrane layer having trenches formed therein defining an x-ray mask pattern. The trenches are filled with collimated, sputtered tungsten sputtered in a relatively high pressure environment. The result is a dense, low stress tungsten film completely filling the trenches. Damascene refers to the process by which the mask is formed. The mask is formed on a silicon substrate and then the substrate is etched away from the bottom side leaving substantially just the oxide layer and the collimated tungsten. The oxide layer is transparent to x-rays and the collimated tungsten layer is opaque to x-rays.