Patents by Inventor Kurt U. Neugebauer

Kurt U. Neugebauer has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device with non-isolated power transistor with integrated diode protection
    Patent number: 10032904
    Abstract: A semiconductor device configured with one or more integrated breakdown protection diodes in non-isolated power transistor devices and electronic apparatus, and methods for fabricating the devices.
    Type: Grant
    Filed: December 14, 2016
    Date of Patent: July 24, 2018
    Assignee: NXP USA, Inc.
    Inventors: Patrice M. Parris, Hubert M. Bode, Weize Chen, Richard J. DeSouza, Andreas Laudenbach, Kurt U. Neugebauer
  • Stacked protection devices with overshoot protection and related fabrication methods
    Patent number: 9620496
    Abstract: Protection circuits, device structures and related fabrication methods are provided. An exemplary protection circuit includes a first protection arrangement and a second protection arrangement. The first protection arrangement includes a first transistor having a first collector, a first emitter, and a first base coupled to the first emitter at a first node, and a second transistor having a second collector, a second emitter, and a second base coupled to the second emitter at a second node, the second collector being coupled to the first collector at a third node. The second protection arrangement is coupled electrically in series between the second node and a fourth node. The protection circuit further includes a first diode coupled between the third node and the fourth node.
    Type: Grant
    Filed: March 10, 2015
    Date of Patent: April 11, 2017
    Assignee: NXP USA, INC.
    Inventors: Weize Chen, Hubert M. Bode, Andreas Laudenbach, Kurt U. Neugebauer, Patrice M. Parris
  • Semiconductor Device with Non-Isolated Power Transistor with Integrated Diode Protection
    Publication number: 20170092760
    Abstract: A semiconductor device configured with one or more integrated breakdown protection diodes in non-isolated power transistor devices and electronic apparatus, and methods for fabricating the devices.
    Type: Application
    Filed: December 14, 2016
    Publication date: March 30, 2017
    Inventors: Patrice M. Parris, Hubert M. Bode, Weize Chen, Richard J. DeSouza, Andreas Laudenbach, Kurt U. Neugebauer
  • Semiconductor device with non-isolated power transistor with integrated diode protection
    Patent number: 9559097
    Abstract: A semiconductor device configured with one or more integrated breakdown protection diodes in non-isolated power transistor devices and electronic apparatus, and methods for fabricating the devices.
    Type: Grant
    Filed: October 6, 2014
    Date of Patent: January 31, 2017
    Assignee: NXP USA, Inc.
    Inventors: Patrice M. Parris, Hubert M. Bode, Weize Chen, Richard J DeSouza, Andreas Laudenbach, Kurt U. Neugebauer
  • STACKED PROTECTION DEVICES WITH OVERSHOOT PROTECTION AND RELATED FABRICATION METHODS
    Publication number: 20160268245
    Abstract: Protection circuits, device structures and related fabrication methods are provided. An exemplary protection circuit includes a first protection arrangement and a second protection arrangement. The first protection arrangement includes a first transistor having a first collector, a first emitter, and a first base coupled to the first emitter at a first node, and a second transistor having a second collector, a second emitter, and a second base coupled to the second emitter at a second node, the second collector being coupled to the first collector at a third node. The second protection arrangement is coupled electrically in series between the second node and a fourth node. The protection circuit further includes a first diode coupled between the third node and the fourth node.
    Type: Application
    Filed: March 10, 2015
    Publication date: September 15, 2016
    Inventors: WEIZE CHEN, HUBERT M. BODE, ANDREAS LAUDENBACH, KURT U. NEUGEBAUER, PATRICE M. PARRIS
  • SEMICONDUCTOR DEVICE WITH NON-ISOLATED POWER TRANSISTOR WITH INTEGRATED DIODE PROTECTION
    Publication number: 20160099349
    Abstract: A semiconductor device configured with one or more integrated breakdown protection diodes in non-isolated power transistor devices and electronic apparatus, and methods for fabricating the devices.
    Type: Application
    Filed: October 6, 2014
    Publication date: April 7, 2016
    Applicant: Freescale Semiconductor, Inc.
    Inventors: Patrice M. Parris, Hubert M. Bode, Weize Chen, Richard J. DeSouza, Andreas Laudenbach, Kurt U. Neugebauer