Abstract: The present disclosure includes methods of using a sacrificial, protective head overcoat during the manufacture of sliders. In some embodiments, the final trailing edge topography of the transducer devices is formed before applying the sacrificial, protective head overcoat. In some embodiments, the final trailing edge topography of the transducer devices is formed after removing the sacrificial, protective head overcoat.

Abstract: The present disclosure includes methods of using a sacrificial, protective head overcoat during the manufacture of sliders. In some embodiments, the final trailing edge topography of the transducer devices is formed before applying the sacrificial, protective head overcoat. In some embodiments, the final trailing edge topography of the transducer devices is formed after removing the sacrificial, protective head overcoat.

Abstract: A device including a near field transducer, the near field transducer including gold (Au) and at least one other secondary atom, the at least one other secondary atom selected from: boron (B), bismuth (Bi), indium (In), sulfur (S), silicon (Si), tin (Sn), hafnium (Hf), niobium (Nb), manganese (Mn), antimony (Sb), tellurium (Te), carbon (C), nitrogen (N), and oxygen (O), and combinations thereof; erbium (Er), holmium (Ho), lutetium (Lu), praseodymium (Pr), scandium (Sc), uranium (U), zinc (Zn), and combinations thereof; and barium (Ba), chlorine (Cl), cesium (Cs), dysprosium (Dy), europium (Eu), fluorine (F), gadolinium (Gd), germanium (Ge), hydrogen (H), iodine (I), osmium (Os), phosphorus (P), rubidium (Rb), rhenium (Re), selenium (Se), samarium (Sm), terbium (Tb), thallium (Th), and combinations thereof.

Abstract: The present disclosure includes methods of using a sacrificial, protective head overcoat during the manufacture of sliders. In some embodiments, the final trailing edge topography of the transducer devices is formed before applying the sacrificial, protective head overcoat. In some embodiments, the final trailing edge topography of the transducer devices is formed after removing the sacrificial, protective head overcoat.

Abstract: A device including a near field transducer, the near field transducer including gold (Au), silver (Ag), copper (Cu), or aluminum (Al), and at least two other secondary atoms, the at least two other secondary atoms selected from: boron (B), bismuth (Bi), indium (In), sulfur (S), silicon (Si), tin (Sn), manganese (Mn), tellurium (Te), holmium (Ho), lutetium (Lu), praseodymium (Pr), scandium (Sc), uranium (U), barium (Ba), chlorine (Cl), cesium (Cs), dysprosium (Dy), europium (Eu), fluorine (F), germanium (Ge), hydrogen (H), iodine (I), rubidium (Rb), selenium (Se), terbium (Tb), nitrogen (N), oxygen (O), carbon (C), antimony (Sb), gadolinium (Gd), samarium (Sm), thallium (Tl), cadmium (Cd), neodymium (Nd), phosphorus (P), lead (Pb), hafnium (Hf), niobium (Nb), erbium (Er), zinc (Zn), magnesium (Mg), palladium (Pd), vanadium (V), zinc (Zn), chromium (Cr), iron (Fe), lithium (Li), nickel (Ni), platinum (Pt), sodium (Na), strontium (Sr), calcium (Ca), yttrium (Y), thorium (Th), beryllium (Be), thulium (Tm), erbium

Abstract: A device including a near field transducer, the near field transducer including gold (Au) and at least one other secondary atom, the at least one other secondary atom selected from: boron (B), bismuth (Bi), indium (In), sulfur (S), silicon (Si), tin (Sn), hafnium (Hf), niobium (Nb), manganese (Mn), antimony (Sb), tellurium (Te), carbon (C), nitrogen (N), and oxygen (O), and combinations thereof; erbium (Er), holmium (Ho), lutetium (Lu), praseodymium (Pr), scandium (Sc), uranium (U), zinc (Zn), and combinations thereof; and barium (Ba), chlorine (Cl), cesium (Cs), dysprosium (Dy), europium (Eu), fluorine (F), gadolinium (Gd), germanium (Ge), hydrogen (H), iodine (I), osmium (Os), phosphorus (P), rubidium (Rb), rhenium (Re), selenium (Se), samarium (Sm), terbium (Tb), thallium (Th), and combinations thereof.

Abstract: A device including a near field transducer, the near field transducer including gold (Au), silver (Ag), copper (Cu), or aluminum (Al), and at least two other secondary atoms, the at least two other secondary atoms selected from: boron (B), bismuth (Bi), indium (In), sulfur (S), silicon (Si), tin (Sn), manganese (Mn), tellurium (Te), holmium (Ho), lutetium (Lu), praseodymium (Pr), scandium (Sc), uranium (U), barium (Ba), chlorine (Cl), cesium (Cs), dysprosium (Dy), europium (Eu), fluorine (F), germanium (Ge), hydrogen (H), iodine (I), rubidium (Rb), selenium (Se), terbium (Tb), nitrogen (N), oxygen (O), carbon (C), antimony (Sb), gadolinium (Gd), samarium (Sm), thallium (Tl), cadmium (Cd), neodymium (Nd), phosphorus (P), lead (Pb), hafnium (Hf), niobium (Nb), erbium (Er), zinc (Zn), magnesium (Mg), palladium (Pd), vanadium (V), zinc (Zn), chromium (Cr), iron (Fe), lithium (Li), nickel (Ni), platinum (Pt), sodium (Na), strontium (Sr), calcium (Ca), yttrium (Y), thorium (Th), beryllium (Be), thulium (Tm), erbium

Abstract: Devices having an air bearing surface (ABS), the devices include a write pole; a near field transducer (NFT) including a peg and a disc, wherein the peg is at the ABS of the device; an overcoat, the overcoat including a low surface energy layer.

Abstract: A device including a near field transducer, the near field transducer including gold (Au) and at least one other secondary atom, the at least one other secondary atom selected from: boron (B), bismuth (Bi), indium (In), sulfur (S), silicon (Si), tin (Sn), hafnium (Hf), niobium (Nb), manganese (Mn), antimony (Sb), tellurium (Te), carbon (C), nitrogen (N), and oxygen (O), and combinations thereof; erbium (Er), holmium (Ho), lutetium (Lu), praseodymium (Pr), scandium (Sc), uranium (U), zinc (Zn), and combinations thereof; and barium (Ba), chlorine (Cl), cesium (Cs), dysprosium (Dy), europium (Eu), fluorine (F), gadolinium (Gd), germanium (Ge), hydrogen (H), iodine (I), osmium (Os), phosphorus (P), rubidium (Rb), rhenium (Re), selenium (Se), samarium (Sm), terbium (Tb), thallium (Th), and combinations thereof.

Abstract: Methods that include forming at least a portion of a near field transducer (NFT) structure; depositing a material onto at least one surface of the portion of the NFT to form a metal containing layer; and subjecting the metal containing layer to conditions that cause diffusion of at least a portion of the material into the at least one surface of the portion of the NFT; and devices formed thereby.

Abstract: Devices having an air bearing surface (ABS), the devices include a write pole; a near field transducer (NFT) including a peg and a disc, wherein the peg is at the ABS of the device; an overcoat, the overcoat including a low surface energy layer.

Abstract: Devices having an air bearing surface (ABS), the devices include a write pole; a near field transducer (NFT) including a peg and a disc, wherein the peg is at the ABS of the device; an overcoat, the overcoat including a low surface energy layer.

Abstract: A device including a near field transducer, the near field transducer including gold (Au) and at least one other secondary atom, the at least one other secondary atom selected from: boron (B), bismuth (Bi), indium (In), sulfur (S), silicon (Si), tin (Sn), hafnium (Hf), niobium (Nb), manganese (Mn), antimony (Sb), tellurium (Te), carbon (C), nitrogen (N), and oxygen (O), and combinations thereof; erbium (Er), holmium (Ho), lutetium (Lu), praseodymium (Pr), scandium (Sc), uranium (U), zinc (Zn), and combinations thereof; and barium (Ba), chlorine (Cl), cesium (Cs), dysprosium (Dy), europium (Eu), fluorine (F), gadolinium (Gd), germanium (Ge), hydrogen (H), iodine (I), osmium (Os), phosphorus (P), rubidium (Rb), rhenium (Re), selenium (Se), samarium (Sm), terbium (Tb), thallium (Th), and combinations thereof.

Abstract: Devices that include a near field transducer (NFT); an amorphous gas barrier layer positioned on at least a portion of the NFT; and a wear resistance layer positioned on at least a portion of the gas barrier layer.

Abstract: Methods that include forming at least a portion of a near field transducer (NFT) structure; depositing a material onto at least one surface of the portion of the NFT to form a metal containing layer; and subjecting the metal containing layer to conditions that cause diffusion of at least a portion of the material into the at least one surface of the portion of the NFT; and devices formed thereby.

Abstract: Devices having an air bearing surface (ABS) and including a write pole; a near field transducer (NFT) that includes a peg and a disc, wherein the peg includes a rear peg portion and a peg tip, the rear peg portion and the peg tip are different materials and the peg tip includes: one or more metals; one or more nanoparticles comprising oxides, nitrides, carbides or combinations thereof; one or more conducting oxides, conducting nitrides, conducting bromides, conducting carbides, or combinations thereof; one or more semiconductors; or combinations thereof.

Abstract: Methods that include forming at least a portion of a near field transducer (NFT) structure; depositing a material onto at least one surface of the portion of the NFT to form a metal containing layer; and subjecting the metal containing layer to conditions that cause diffusion of at least a portion of the material into the at least one surface of the portion of the NFT; and devices formed thereby.

Abstract: A device that includes a near field transducer (NFT), the NFT having a disc and a peg, and the peg having an air bearing surface thereof; and at least one adhesion layer positioned on at least the air bearing surface of the peg, the adhesion layer including one or more of platinum (Pt), iridium (Ir), ruthenium (Ru), rhodium (Rh), palladium (Pd), yttrium (Y), chromium (Cr), nickel (Ni), and scandium (Sc).

Abstract: Devices that include a near field transducer (NFT); an amorphous gas barrier layer positioned on at least a portion of the NFT; and a wear resistance layer positioned on at least a portion of the gas barrier layer.

Abstract: Devices that include a near field transducer (NFT); a multilayer gas barrier layer positioned on at least a portion of the NFT, the multilayer gas barrier layer including at least a first and a second sublayer, where the second gas barrier sublayer is positioned on the first gas barrier sublayer, the first gas barrier sublayer is positioned adjacent the NFT and the second gas barrier sublayer is positioned adjacent the wear resistant layer, the first and second sublayers independently have thicknesses from 0.01 nm to 5 nm; and a wear resistance layer positioned on at least a portion of the gas barrier layer.