Abstract: A mode locked semiconductor disk laser with an output beam having an ultra-short pulse length which provides the incident beam to a non linear microscope. The wavelength of the beam is at or near the action cross section maximum absorption wavelength for creating two photon excited fluorescence of a fluorescent biological marker in a sample. Semiconductor disk lasers combine excellent beam quality and output power, stability while maintaining simplicity and easiness of operation. In addition, these types of lasers are ideally suited for mass production as they are built in wafer-scale technology enabling a high level of integration. Importantly this non expensive, turn-key, compact laser system could be used as a platform to develop portable non-linear bio-imaging devices for clinical studies, facilitating its wide-spread adoption in “real-life” applications.

Abstract: A mode locked semiconductor disk laser with an output beam having an ultra-short pulse length which provides the incident beam to a non linear microscope. The wavelength of the beam is at or near the action cross section maximum absorption wavelength for creating two photon excited fluorescence of a fluorescent biological marker in a sample. Semiconductor disk lasers combine excellent beam quality and output power, stability while maintaining simplicity and easiness of operation. In addition, these types of lasers are ideally suited for mass production as they are built in wafer-scale technology enabling a high level of integration. Importantly this non expensive, turn-key, compact laser system could be used as a platform to develop portable non-linear bio-imaging devices for clinical studies, facilitating its wide-spread adoption in “real-life” applications.

Abstract: An apparatus for generating at least three visible light beams of different output wavelengths for display purposes includes a passively mode-locked solid-state thin-disk laser and a device, including an optical parametric oscillator (OPO) for at least partially converting the primary light beam into electromagnetic radiation having the at least three different output wavelengths. The OPO is preferably an optical fiber feedback OPO. An optical fiber feedback OPO includes a nonlinear optical element and feedback device for feeding back at least a portion of the radiation emitted by the nonlinear medium to the nonlinear element. The feedback device includes an optical fiber.

Abstract: According to the invention, a semiconductor saturable absorber mirror device for reflecting at least a proportion of electromagnetic radiation of essentially one given optical frequency impinging on said device, comprises a substrate with a Bragg reflector, and on top of this Bragg reflector a layered structure with at least one layer with saturably absorbing semiconductor material. A low index dielectric coating layer is placed on said outermost surface of said structure. The Bragg reflector and said layered structure are designed in a manner that the field intensity of radiation of said given frequency takes up a maximum at or near the interface between said structure and said dielectric material. The thickness of said dielectric coating layer may be varied and may for example be a quarter of a wavelength of said electromagnetic radiation in the dielectric material.

Abstract: A multiplexer for producing an output continuous-wave train of electromagnetic radiation pulses from an input continuous-wave train of electromagnetic radiation pulses is disclosed, the pulse repetition frequency of the output train of pulses exceeding the pulse repetition frequency of the input train of pulses. The time domain multiplexer comprises a planar lightwave integrated circuit (PLC) at least two integrated beam couplers and at least two intermediate integrated waveguide paths arranged between said beam couplers, the optical lengths of said two waveguide paths being different. The optical beam path difference is chosen and said time beam couplers are designed in a manner that said device is for multiplexing trains of electromagnetic pulses with an input pulse repetition frequency exceeding 1 GHz into at least one train of electromagnetic pulses with an output pulse repetition frequency being larger by a factor N≧2.

Abstract: An optically pumped laser with an Er:Yb: doped solid state gain element is disclosed, which is passively mode-locked by means of a saturable absorber mirror. The laser is designed to operate at a fundamental repetition rate exceeding 1 GHz and preferably at an effective wavelength between 1525 nm and 1570 nm. Compared to state of the art solid state pulsed lasers, the threshold for Q-switched-mode-locked operation is substantially improved. Thus, according to one embodiment, the laser achieves a repetition rate beyond 40 GHz. The laser preferably comprises means for wavelength tuning and repetition rate locking.

Abstract: The apparatus for generating at least three visible light beams of different output wavelengths for display purposes comprises a passively mode-locked solid-state thin-disk laser and means for at least partially converting said primary light beam into electromagnetic radiation characterized by said at least three different output wavelengths including an optical parametric oscillator (OPO). The OPO is preferably an optical fiber feedback OPO. An optical fiber feedback OPO comprises a nonlinear optical element and feedback means for feeding back at least a proportion of the radiation emitted by the nonlinear medium to the nonlinear element, wherein the feedback means comprise an optical fiber.

Abstract: According to the invention, a semiconductor saturable absorber mirror device for reflecting at least a proportion of electromagnetic radiation of essentially one given optical frequency impinging on said device, comprises a substrate with a Bragg reflector, and on top of this Bragg reflector a layered structure with at least one layer with saturably absorbing semiconductor material. A low index dielectric coating layer is placed on said outermost surface of said structure. The Bragg reflector and said layered structure are designed in a manner that the field intensity of radiation of said given frequency takes up a maximum at or near the interface between said structure and said dielectric material. The thickness of said dielectric coating layer may be varied and may for example be a quarter of a wavelength of said electromagnetic radiation in the dielectric material.

Abstract: An optically pumped laser with an Er:Yb: doped solid state gain element is disclosed, which is passively mode-locked by means of a saturable absorber mirror. The laser is designed to operate at a fundamental repetition rate exceeding 1 GHz and preferably at an effective wavelength between 1525 nm and 1570 nm. Compared to state of the art solid state pulsed lasers, the threshold for Q-switched-mode-locked operation is substantially improved. Thus, according to one embodiment, the laser achieves a repetition rate beyond 40 GHz. The laser preferably comprises means for wavelength tuning and repetition rate locking.

Abstract: An optically pumped laser with an Er:Yb: doped solid state gain element is disclosed, which is passively mode-locked by means of a semiconductor saturable absorber mirror. The laser is designed to operate at a fundamental repetition rate exceeding 1 GHz and preferably at an effective wavelength between 1525 nm and 1570 nm. Compared to state of the art solid state pulsed lasers, the threshold for Q-switched-mode-locked operation is substantially improved. Thus, according to one embodiment, the laser achieves a repetition rate beyond 40 GHz. The laser preferably comprises means for wavelength tuning and repetition rate locking.

Abstract: A “low field enhancement” (LFR) semiconductor saturable absorber device design in which the structure is changed such that it has a resonant condition. Consequently, the field strength is substantially higher in the spacer layer, resulting in a smaller saturation fluence and in a higher modulation depth. However, the field in the spacer layer is still lower than the free space field or only moderately enhanced compared to the field in the free space. According to one embodiment, the absorber device is a Semiconductor Saturable Absorber Mirror (SESAM) device. In contrast with SESAMs according to the state of the art, a structure including the absorber and being placed on top of a Bragg reflector is provided, which essentially fulfills a resonance condition whereby a standing electromagnetic wave is present in the structure. In other words, the design is such that the field intensity reaches a local maximum in the vicinity of the device surface.

Abstract: A pulsed solid-state laser comprises an optical resonator and a solid-state laser medium placed inside the optical resonator. A saturable absorber, such as a semiconductor saturable absorber mirror device for passive mode locking is placed inside the optical resonator, and a pumping source is provided for exciting the laser gain medium to emit electromagnetic radiation. The pumping source emits pump radiation which impinges on the laser gain medium in the form of a non-diffraction-limited focused pumping beam. The product of the stimulated emission cross section times the spontaneous fluorescence lifetime is low for the laser medium, e.g., 0.1.multidot.10.sup.-23 cm.sup.2 s for Ti:sapphire; nevertheless, the laser yields a high output power of a few Watt even if pumped with a non-diffraction-limited pumping beam. Pumping with a non-diffraction-limited pumping beam makes feasible solid-state lasers with remarkably smaller sizes and lower costs, but with the same performance as known lasers.