Patents by Inventor Kurt William Einsebeiser

Kurt William Einsebeiser has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same
    Publication number: 20040150076
    Abstract: High quality epitaxial layers of compound semiconductor materials can be grown overlying large silicon wafers by first growing an accommodating buffer layer on a silicon wafer. The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline compound semiconductor layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer.
    Type: Application
    Filed: February 2, 2004
    Publication date: August 5, 2004
    Applicant: MOTOROLA, INC.
    Inventors: Jamal Ramdani, Ravindranath Droopad, Lyndee L. Hilt, Kurt William Einsebeiser
  • Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same
    Publication number: 20040150003
    Abstract: High quality epitaxial layers of compound semiconductor materials can be grown overlying large silicon wafers by first growing an accommodating buffer layer on a silicon wafer. The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline compound semiconductor layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer.
    Type: Application
    Filed: February 2, 2004
    Publication date: August 5, 2004
    Applicant: MOTOROLA, INC.
    Inventors: Jamal Ramdani, Ravindranath Droopad, Lyndee L. Hilt, Kurt William Einsebeiser