Patents by Inventor Kurt William Eisenbeiser

Kurt William Eisenbeiser has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same
    Publication number: 20040232525
    Abstract: High quality epitaxial layers of compound semiconductor materials can be grown overlying large silicon wafers by first growing an accommodating buffer layer on a silicon wafer. The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline compound semiconductor layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer.
    Type: Application
    Filed: June 29, 2004
    Publication date: November 25, 2004
    Applicant: MOTOROLA, INC.
    Inventors: Jamal Ramdani, Ravindranath Droopad, Lyndee L. Hilt, Kurt William Eisenbeiser
  • Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same
    Publication number: 20040149203
    Abstract: High quality epitaxial layers of compound semiconductor materials can be grown overlying large silicon wafers by first growing an accommodating buffer layer on a silicon wafer. The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline compound semiconductor layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer.
    Type: Application
    Filed: February 2, 2004
    Publication date: August 5, 2004
    Applicant: MOTOROLA, INC.
    Inventors: Jamal Ramdani, Ravindranath Droopad, Lyndee L. Hilt, Kurt William Eisenbeiser
  • Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same
    Publication number: 20040149202
    Abstract: High quality epitaxial layers of compound semiconductor materials can be grown overlying large silicon wafers by first growing an accommodating buffer layer on a silicon wafer. The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline compound semiconductor layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer.
    Type: Application
    Filed: February 2, 2004
    Publication date: August 5, 2004
    Applicant: MOTOROLA, INC.
    Inventors: Jamal Ramdani, Ravindranath Droopad, Lyndee L. Hilt, Kurt William Eisenbeiser
  • Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same
    Publication number: 20020074624
    Abstract: High quality epitaxial layers of compound semiconductor materials can be grown overlying large silicon wafers by first growing an accommodating buffer layer on a silicon wafer. The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline compound semiconductor layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer.
    Type: Application
    Filed: February 19, 2002
    Publication date: June 20, 2002
    Applicant: MOTOROLA, INC.
    Inventors: Jamal Ramdani, Ravindranath Droopad, Lyndee L. Hilt, Kurt William Eisenbeiser
  • Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same
    Patent number: 6392257
    Abstract: High quality epitaxial layers of compound semiconductor materials can be grown overlying large silicon wafers by first growing an accommodating buffer layer on a silicon wafer. The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline compound semiconductor layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer.
    Type: Grant
    Filed: February 10, 2000
    Date of Patent: May 21, 2002
    Assignee: Motorola Inc.
    Inventors: Jamal Ramdani, Ravindranath Droopad, Lyndee L. Hilt, Kurt William Eisenbeiser