Abstract: Methods are described for reducing the wet etch rate of dielectric films formed on a patterned substrate by flowing the material into gaps during deposition. Films deposited in this manner may initially exhibit elevated wet etch rates. The dielectric films are treated by exposing the patterned substrate to a high pressure of water vapor in the gas phase. The treatment may reduce the wet etch rate of the dielectric films, especially the gapfill portion of the dielectric film. Scanning electron microscopy has confirmed that the quantity and/or size of pores is reduced or eliminated by the procedures described herein. The treatment has also been found to reduce the etch rate, e.g., at the bottom of gaps filled with the dielectric film.

Abstract: Methods are described for reducing the wet etch rate of dielectric films formed on a patterned substrate by flowing the material into gaps during deposition. Films deposited in this manner may initially exhibit elevated wet etch rates. The dielectric films are treated by exposing the patterned substrate to a high pressure of water vapor in the gas phase. The treatment may reduce the wet etch rate of the dielectric films, especially the gapfill portion of the dielectric film. Scanning electron microscopy has confirmed that the quantity and/or size of pores is reduced or eliminated by the procedures described herein. The treatment has also been found to reduce the etch rate, e.g., at the bottom of gaps filled with the dielectric film.