Patents by Inventor Kwai Hei Li

Kwai Hei Li has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Flexible GAN light-emitting diodes
    Patent number: 10615222
    Abstract: Methods of fabricating flexible, free-standing LED structures are provided. An LED structure can be formed on a sapphire substrate, and the surface of the LED structure can then be coated with epoxy and attached to a rigid supporting substrate. A laser lift-off process can be performed using an ultraviolent beam from a high-power pulsed-mode laser and a shadow mask, causing at least a portion of the LED structure to separate from the sapphire substrate. The structure can then be immersed in an acetone bath to dissolve the epoxy and separate the structure from the supporting substrate.
    Type: Grant
    Filed: August 20, 2015
    Date of Patent: April 7, 2020
    Assignee: The University of Hong Kong
    Inventors: Hoi Wai Choi, Kwai Hei Li, Yuk Fai Cheung
  • LIGHT-EMITTING DIODES (LEDS) WITH MONOLITHICALLY-INTEGRATED PHOTODETECTORS FOR IN SITU REAL-TIME INTENSITY MONITORING
    Publication number: 20190157508
    Abstract: A device includes a light-emitting diode (LED) integrated with a photodetector on the same semiconductor platform, such that the photocurrent generated by the photodetector can be used to monitor the optical output of the LED, which is located adjacent to the photodetector. The device provides a compact, robust, reliable and low-cost way of monitoring LED emission.
    Type: Application
    Filed: May 17, 2016
    Publication date: May 23, 2019
    Applicant: The University of Hong Kong
    Inventors: Hoi Wai CHOI, Kwai Hei LI, Haitao LU
  • FLEXIBLE GAN LIGHT-EMITTING DIODES
    Publication number: 20160233269
    Abstract: Methods of fabricating flexible, free-standing LED structures are provided. An LED structure can be formed on a sapphire substrate, and the surface of the LED structure can then be coated with epoxy and attached to a rigid supporting substrate. A laser lift-off process can be performed using an ultraviolent beam from a high-power pulsed-mode laser and a shadow mask, causing at least a portion of the LED structure to separate from the sapphire substrate. The structure can then be immersed in an acetone bath to dissolve the epoxy and separate the structure from the supporting substrate.
    Type: Application
    Filed: August 20, 2015
    Publication date: August 11, 2016
    Inventors: Hoi Wai Choi, Kwai Hei Li, Yuk Fai Cheung