Patents by Inventor Kwame N. Eason

Kwame N. Eason has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device having a dielectric layer with a uniform nitrogen profile
    Publication number: 20030157773
    Abstract: A method for manufacturing a semiconductor device includes forming a first layer adjacent a semiconductor substrate. The first layer may comprise oxygen. The first layer may be subjected to a material comprising nitrogen to form a second layer. The second layer may be oxidized to form a dielectric layer which may have a relatively uniform nitrogen profile. Rapid thermal oxidation may be used to form the dielectric layer. The dielectric layer may have a physical thickness greater than a physical thickness of the second layer.
    Type: Application
    Filed: March 13, 2003
    Publication date: August 21, 2003
    Inventors: Jerry Hu, Paul E. Nicollian, Kwame N. Eason, Rajesh Khamankar, Mark S. Rodder, Sunil Hattangady
  • Semiconductor device having a dielectric layer with a uniform nitrogen profile
    Publication number: 20030080389
    Abstract: A method for manufacturing a semiconductor device includes forming a first layer adjacent a semiconductor substrate. The first layer may comprise oxygen. The first layer may be subjected to a material comprising nitrogen to form a second layer. The second layer may be oxidized to form a dielectric layer which may have a relatively uniform nitrogen profile. Rapid thermal oxidation may be used to form the dielectric layer. The dielectric layer may have a physical thickness greater than a physical thickness of the second layer.
    Type: Application
    Filed: October 31, 2001
    Publication date: May 1, 2003
    Inventors: Jerry Hu, Kwame N. Eason, Rajesh Khamankar, Mark S. Rodder, Paul E. Nicollian, Sunil Hattangady