Patents by Inventor Kwan-bin YIM

Kwan-bin YIM has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11586538
    Abstract: Provided is a storage device including a power management integrated circuit chip; multiple non-volatile memories configured to receive power from the power management integrated circuit chip; and a controller configured to control the non-volatile memories, wherein the controller checks a state of the power during a read operation and a write operation on the non-volatile memories and, when a power failure is detected in at least one of the non-volatile memories, implements a power failure detection mode regarding the read operation and the write operation on all of the non-volatile memories.
    Type: Grant
    Filed: June 28, 2021
    Date of Patent: February 21, 2023
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Kwang-Kyu Bang, Young-Min Kim, Kwan-Bin Yim
  • Patent number: 11320993
    Abstract: A solid-state drive (SSD) power-mode control method that includes storing, in an active register, active mode control data used for switching the SSD from a low power mode to an active mode, storing, in a standby register, low power mode control data used for switching the SSD from the active mode to the low power mode, and controlling power supplied to the SSD in accordance with the low power mode control data or the active mode control data in response to the SSD switching (i) from the active mode to the low power mode or (ii) from the low power mode to the active mode.
    Type: Grant
    Filed: September 6, 2019
    Date of Patent: May 3, 2022
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Byung Yun Cho, Su Il Jin, Young Keun Oh, Kwan Bin Yim
  • Patent number: 11314268
    Abstract: An electronic device includes: a switching regulator configured to generate a conversion voltage with respect to an input voltage, based on a switching signal of a first frequency, and output the conversion voltage; a stabilization circuit including a capacitor element connected to a load device via a first node and configured to generate a load voltage by stabilizing the conversion voltage by using the capacitor element and output the load voltage to the load device; a frequency sensing circuit configured to sense a frequency of the load voltage and output sensing information about the frequency of the load voltage; and a frequency booster circuit configured to form a first current path connected to the first node, based on the sensing information.
    Type: Grant
    Filed: December 11, 2019
    Date of Patent: April 26, 2022
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Sang-Il Han, Ji-Hong Kim, Kwan-Bin Yim, Young-Min Kim, Han-Jae Lee, Su-Il Jin
  • Publication number: 20210326258
    Abstract: Provided is a storage device including a power management integrated circuit chip; multiple non-volatile memories configured to receive power from the power management integrated circuit chip; and a controller configured to control the non-volatile memories, wherein the controller checks a state of the power during a read operation and a write operation on the non-volatile memories and, when a power failure is detected in at least one of the non-volatile memories, implements a power failure detection mode regarding the read operation and the write operation on all of the non-volatile memories.
    Type: Application
    Filed: June 28, 2021
    Publication date: October 21, 2021
    Inventors: KWANG-KYU BANG, YOUNG-MIN KIM, KWAN-BIN YIM
  • Patent number: 11080186
    Abstract: Provided is a storage device including a power management integrated circuit chip; multiple non-volatile memories configured to receive power from the power management integrated circuit chip; and a controller configured to control the non-volatile memories, wherein the controller checks a state of the power during a read operation and a write operation on the non-volatile memories and, when a power failure is detected in at least one of the non-volatile memories, implements a power failure detection mode regarding the read operation and the write operation on all of the non-volatile memories.
    Type: Grant
    Filed: August 21, 2019
    Date of Patent: August 3, 2021
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Kwang-Kyu Bang, Young-Min Kim, Kwan-Bin Yim
  • Publication number: 20200210079
    Abstract: A solid-state drive (SSD) power-mode control method that includes storing, in an active register, active mode control data used for switching the SSD from a low power mode to an active mode, storing, in a standby register, low power mode control data used for switching the SSD from the active mode to the low power mode, and controlling power supplied to the SSD in accordance with the low power mode control data or the active mode control data in response to the SSD switching (i) from the active mode to the low power mode or (ii) from the low power mode to the active mode.
    Type: Application
    Filed: September 6, 2019
    Publication date: July 2, 2020
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Byung Yun CHO, Su ll JIN, Young Keun OH, Kwan Bin YIM
  • Publication number: 20200209903
    Abstract: An electronic device includes: a switching regulator configured to generate a conversion voltage with respect to an input voltage, based on a switching signal of a first frequency, and output the conversion voltage; a stabilization circuit including a capacitor element connected to a load device via a first node and configured to generate a load voltage by stabilizing the conversion voltage by using the capacitor element and output the load voltage to the load device; a frequency sensing circuit configured to sense a frequency of the load voltage and output sensing information about the frequency of the load voltage; and a frequency booster circuit configured to form a first current path connected to the first node, based on the sensing information.
    Type: Application
    Filed: December 11, 2019
    Publication date: July 2, 2020
    Inventors: SANG-IL HAN, JI-HONG KIM, KWAN-BIN YIM, YOUNG-MIN KIM, HAN-JAE LEE, SU-IL JIN
  • Publication number: 20200201762
    Abstract: Provided is a storage device including a power management integrated circuit chip; multiple non-volatile memories configured to receive power from the power management integrated circuit chip; and a controller configured to control the non-volatile memories, wherein the controller checks a state of the power during a read operation and a write operation on the non-volatile memories and, when a power failure is detected in at least one of the non-volatile memories, implements a power failure detection mode regarding the read operation and the write operation on all of the non-volatile memories.
    Type: Application
    Filed: August 21, 2019
    Publication date: June 25, 2020
    Inventors: KWANG-KYU BANG, YOUNG-MIN KIM, KWAN-BIN YIM
  • Publication number: 20180061463
    Abstract: An electronic device includes a power connector, a power supply conductive line, and a pre-charge conductive line. The power connector includes a pre-charge pin and a power supply pin. The power supply conductive line has a first resistance, and is configured to electrically connect the power supply pin to a power supply node. The pre-charge conductive line has a second resistance, which is greater than the first resistance, and the pre-charge conductive line is configured to electrically connect the pre-charge pin to the power supply node without an intervening resistor between the pre-charge pin and the power supply node.
    Type: Application
    Filed: April 18, 2017
    Publication date: March 1, 2018
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Ik-sung PARK, Joo-young KIM, Hee-youb KANG, Kwan-bin YIM, Byung-yun CHO
  • Patent number: 9281750
    Abstract: A power supply device includes a transformer including primary winding and secondary winding, a sensor configured to sense at least one of output voltage and output current in the power supply device, a pulse width modulation (PWM) controller configured to perform PWM switching so that voltage is selectively provided to the primary winding based on one of the sensed output voltage and output current, and a regulator configured to stop PWM switching of the PWM controller and keep the PWM switching in stopped state when at least one of the sensed output voltage and output current exceeds a preset value.
    Type: Grant
    Filed: December 4, 2014
    Date of Patent: March 8, 2016
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventor: Kwan-bin Yim
  • Publication number: 20150222190
    Abstract: A power supply device includes a transformer including primary winding and secondary winding, a sensor configured to sense at least one of output voltage and output current in the power supply device, a pulse width modulation (PWM) controller configured to perform PWM switching so that voltage is selectively provided to the primary winding based on one of the sensed output voltage and output current, and a regulator configured to stop PWM switching of the PWM controller and keep the PWM switching in stopped state when at least one of the sensed output voltage and output current exceeds a preset value.
    Type: Application
    Filed: December 4, 2014
    Publication date: August 6, 2015
    Applicant: Samsung Electronics Co., Ltd.
    Inventor: Kwan-bin YIM