Abstract: A semiconductor package may include: a package substrate including a plurality of terminals for communication with a memory controller and a plurality of bonding pads for communication inside a package; a buffer chip located on the package substrate; a plurality of memory chips stacked on the buffer chip; and a plurality of wires connecting the plurality of bonding pads and the plurality of memory chips. The buffer chip may communicate with the memory controller through the plurality of terminals of the package substrate, and the plurality of memory chips may communicate with the buffer chip through the plurality of wires and the plurality of bonding pads of the package substrate.

Abstract: A semiconductor system includes a second semiconductor device. The second semiconductor device configured to receive an external clock, first and second code signals, and input and output data. The second semiconductor device configured to adjust a delay amount depending on a combination of the first and second code signals, generate an internal clock by delaying the external clock according to the adjusted delay amount, and input and output data in synchronization with the internal clock. The second semiconductor device is adjusted in a driving force for driving the internal clock, depending on a voltage level of a node included in a path through which the internal clock is delayed.

Abstract: A semiconductor system includes a second semiconductor device. The second semiconductor device configured to receive an external clock, first and second code signals, and input and output data. The second semiconductor device configured to adjust a delay amount depending on a combination of the first and second code signals, generate an internal clock by delaying the external clock according to the adjusted delay amount, and input and output data in synchronization with the internal clock. The second semiconductor device is adjusted in a driving force for driving the internal clock, depending on a voltage level of a node included in a path through which the internal clock is delayed.

Abstract: A memory module includes memory devices; data buffers suitable for receiving write data transferred from a memory controller and transmitting read data to the memory controller; a buffer control signal generation circuit suitable for generating buffer control signals for controlling the data buffers, by using a command transferred from the memory controller; a command delay circuit suitable for generating an effective command by delaying the command by a delay amount of the buffer control signal generation circuit in a read operation and a write operation; a data processing circuit suitable for processing write data transferred from the data buffers and transferring processed write data to the memory devices, and processing read data transferred from the memory devices and transferring processed read data to the data buffers, in response to the effective command; and a command buffer circuit suitable for transferring the effective command to the memory devices.

Abstract: A semiconductor apparatus may include a package substrate, and a plurality of semiconductor chips. Wherein the package substrate and the semiconductor chips may be configured based on a load value of the semiconductor apparatus.

Abstract: A memory module includes memory devices; data buffers suitable for receiving write data transferred from a memory controller and transmitting read data to the memory controller; a buffer control signal generation circuit suitable for generating buffer control signals for controlling the data buffers, by using a command transferred from the memory controller; a command delay circuit suitable for generating an effective command by delaying the command by a delay amount of the buffer control signal generation circuit in a read operation and a write operation; a data processing circuit suitable for processing write data transferred from the data buffers and transferring processed write data to the memory devices, and processing read data transferred from the memory devices and transferring processed read data to the data buffers, in response to the effective command; and a command buffer circuit suitable for transferring the effective command to the memory devices.

Abstract: A semiconductor apparatus may include a package substrate, and a plurality of semiconductor chips. Wherein the package substrate and the semiconductor chips may be configured based on a load value of the semiconductor apparatus.

Abstract: A semiconductor apparatus may include a package substrate, and a plurality of semiconductor chips. Wherein the package substrate and the semiconductor chips may be configured based on a load value of the semiconductor apparatus.

Abstract: A semiconductor apparatus may include a package substrate, and a plurality of semiconductor chips. Wherein the package substrate and the semiconductor chips may be configured based on a load value of the semiconductor apparatus.

Abstract: A semiconductor system may include a first semiconductor device configured to output a clock, receive and output data, and detect a jitter of a transmission path according to a level combination of a plurality of monitoring signals. The semiconductor system may also include a second semiconductor device configured to generate the plurality of monitoring signals of which the level combination is changed according to phase differences between an internal clock generated through the transmission path for transmitting the clock and a plurality of divided clocks obtained by dividing the frequency of the clock.

Abstract: An integrated circuit may include a receiver suitable for comparing voltage levels of an external signal and a reference voltage with each other, and generating an internal signal, an adjustment code generation unit suitable for detecting a duty of the internal signal and generating an adjustment code of one or more bits, and a voltage adjustment unit suitable for adjusting the voltage level of the reference voltage in response to the adjustment code.

Abstract: A phase-locked loop includes a phase detection unit configured to compare the phase of a feedback clock with the phase of an input clock, a clock generation unit configured to adjust the frequency of a first clock based on a result of the comparison of the phase detection unit, a first division unit configured to generate an output clock by dividing the first clock at a first division ratio in test mode and generate the output clock by dividing the first clock at a second division ratio that is lower than the first division ratio in normal mode, and a second division unit configured to generate the feedback clock by dividing the output clock.

Abstract: A delay locked loop includes: a variable delay unit configured to delay a reference clock signal in response to a delay code and generate a delay locked loop clock signal; a delay model unit configured to delay the delay locked loop clock signal by a modeled delay value and output delayed delay locked loop clock signal as a feedback clock signal; a calculation code generation unit configured to convert a phase of the reference clock signal and a phase of the feedback clock signal into a first code and a second code, respectively, and perform a calculation on the first and second codes so as to generate a calculation code; and a delay code generation unit configured to control the delay code in response to the calculation code.

Abstract: A voltage controlled delay circuit may include a first PMOS transistor suitable for pull-up driving a first differential output node in response to a voltage of the first differential output node, a second PMOS transistor suitable for pull-down driving a second differential output node in response to a voltage of the second differential output node, a third PMOS transistor suitable for pull-up driving the first differential output node in response to a pull-up control voltage, a fourth PMOS transistor suitable for pull-up driving the second differential output node in response to the pull-up control voltage, a first resistor suitable for pull-up driving the first differential output node, a second resistor suitable for pull-up driving the second differential output node, a first NMOS transistor suitable for pull-down driving the first differential output node in response to a voltage of a second differential input node, and a second NMOS transistor suitable for pull-down driving the second differential output

Abstract: An integrated circuit may include a receiver suitable for comparing voltage levels of an external signal and a reference voltage with each other, and generating an internal signal, an adjustment code generation unit suitable for detecting a duty of the internal signal and generating an adjustment code of one or more bits, and a voltage adjustment unit suitable for adjusting the voltage level of the reference voltage in response to the adjustment code.

Abstract: A semiconductor memory device includes a first internal clock generation circuit configured to generate a first internal clock by compensating an external clock signal for a transfer delay thereof in the semiconductor memory device, a control voltage generation circuit configured to generate a control voltage in response to a profile selection signal, a second internal clock generation circuit configured to generate a second internal clock signal by delaying the first internal clock signal by a time corresponding to the control voltage, a selection output circuit configured to select one of the first internal clock signal and the second internal clock signal in response to a path selection signal and output a selected signal as a synchronization clock signal, and a data output circuit configured to output a data in synchronization with the synchronization clock signal.

Abstract: A delay locked loop includes: a variable delay unit configured to delay a reference clock signal in response to a delay code and generate a delay locked loop clock signal; a delay model unit configured to delay the delay locked loop clock signal by a modeled delay value and output delayed delay locked loop clock signal as a feedback clock signal; a calculation code generation unit configured to convert a phase of the reference clock signal and a phase of the feedback clock signal into a first code and a second code, respectively, and perform a calculation on the first and second codes so as to generate a calculation code; and a delay code generation unit configured to control the delay code in response to the calculation code.

Abstract: An integrated circuit includes a ring oscillator including delay cells having a delay value and configured to generate two or more periodic waves, a first phase controller configured to compare the phase of a first selected periodic wave to the phase of a reference wave and change the delay value of the delay cells from a first delay value to a second delay value based on a first comparison signal corresponding to a phase difference between the first selected periodic wave and the reference wave, and a second phase controller configured to compare the phase of a second selected periodic wave to the phase of the reference wave and restore the delay value of the delay cells from the second delay value to the first delay value based on a second comparison signal corresponding to a phase difference between the second selected periodic wave and the reference wave.

Abstract: A delay locked loop includes: a variable delay unit configured to delay a reference clock signal in response to a delay code and generate a delay locked loop clock signal; a delay model unit configured to delay the delay locked loop clock signal by a modeled delay value and output delayed delay locked loop clock signal as a feedback clock signal; a calculation code generation unit configured to convert a phase of the reference clock signal and a phase of the feedback clock signal into a first code and a second code, respectively, and perform a calculation on the first and second codes so as to generate a calculation code; and a delay code generation unit configured to control the delay code in response to the calculation code.

Abstract: A semiconductor apparatus includes: a variable delay unit configured to delay a reference clock signal in response to a delay code and generate a data latch clock signal; a delay amount control unit configured to convert a phase of external data and a phase of the data latch clock signal into first and second codes, respectively, and generate the delay code through a calculation of the first and second codes; and a data receiver configured to latch the external data as internal data in synchronization with the data latch clock signal.