Abstract: Provided are a substrate supporting apparatus and a plasma etching apparatus having the same. There is provided a substrate supporting apparatus that can separately provide powers to a central region and an edge region by disposing an electrode supporting a substrate at the central region of the substrate supporting apparatus, and disposing an electrode receiving radio frequency (RF) power at the edge region of the substrate supporting apparatus. There is provided a substrate edge etching apparatus having the substrate supporting apparatus for removing layers or particles deposited in an edge region of a semiconductor substrate and preventing damage of a center region of the semiconductor substrate during an etching process of the substrate edge.

Abstract: There is provided a substrate supporter capable of securely supporting a substrate such as a wafer on which a device having a predetermined thin film pattern is formed to remove various impurities formed on the rear surface of the substrate, and a plasma processing apparatus having the same. The plasma processing apparatus includes: at least one arm; and a supporting portion extending from the arm toward a substrate seating position of the substrate, so that the plasma processing apparatus can reduce the likelihood of arc discharges compared with conventional dry etching to increase process yield and product reliability, and ensure stable mounting of a substrate.

Abstract: Provided is a method of forming a nanogap pattern of a biosensor. First, an oxide layer is formed on a substrate and a first nitride layer is formed on the oxide layer. The first nitride layer is partially etched to form a first nitride layer pattern having a first gap that gradually narrows from a top portion to a bottom portion thereof and exposes the oxide layer. A second nitride layer is formed along the first nitride layer and along sidewalls and a bottom surface of the first gap. The second nitride layer is etched to form a second nitride layer pattern having a second gap narrower than the first gap on the sidewalls of the first gap. The oxide layer is etched by using the second nitride layer pattern as an etching mask to form an oxide layer pattern having a third gap, and thus, the nanogap pattern is completed.

Abstract: Provided are a substrate supporting apparatus and a plasma etching apparatus having the same. There is provided a substrate supporting apparatus that can separately provide powers to a central region and an edge region by disposing an electrode supporting a substrate at the central region of the substrate supporting apparatus, and disposing an electrode receiving radio frequency (RF) power at the edge region of the substrate supporting apparatus. There is provided a substrate edge etching apparatus having the substrate supporting apparatus for removing layers or particles deposited in an edge region of a semiconductor substrate and preventing damage of a center region of the semiconductor substrate during an etching process of the substrate edge.

Abstract: There is provided a substrate supporter capable of securely supporting a substrate such as a wafer on which a device having a predetermined thin film pattern is formed to remove various impurities formed on the rear surface of the substrate, and a plasma processing apparatus having the same. The plasma processing apparatus includes: at least one arm; and a supporting portion extending from the arm toward a substrate seating position of the substrate, so that the plasma processing apparatus can reduce the likelihood of arc discharges compared with conventional dry etching to increase process yield and product reliability, and ensure stable mounting of a substrate.

Abstract: There is disclosed a showerhead apparatus for radical-assisted deposition including a showerhead of a two-stair structure separated by a given distance, which has a first buffer for uniformly distributing a raw material gas and a second buffer for uniformly distributing a plasma gas, wherein a plasma is generated within the showerheads and the raw material gas sprayed into the plasma is constantly maintained, thus forming a uniform thin film on a wafer or a substrate.

Abstract: Trench isolation structure includes a first conformal insulating film (preferably consisting of silicon nitride) which lines a trench etched in a silicon substrate, an insulating layer (preferably consisting of silicon dioxide) which caps the lined trench and thereby forms a cavity, and a gas (preferably consisting of carbon dioxide) within the cavity. Fabrication of the trench isolation structure is begun by depositing a first conformal insulating film onto the surface of a trench etched in a silicon substrate, thereby forming a lined trench. An amorphous carbon layer is deposited within the lined trench and the lined trench is capped by an insulating layer which encloses the amorphous carbon within a cavity. The solid amorphous carbon within the cavity is converted to carbon dioxide gas by annealing the substrate in an oxidizing ambient. Planarizing the insulating layer to the level of the substrate completes fabrication of the trench isolation structure.

Abstract: There is disclosed a showerhead apparatus for radical-assisted deposition including a showerhead of a two-stair structure separated by a given distance, which has a first buffer for uniformly distributing a raw material gas and a second buffer for uniformly distributing a plasma gas, wherein a plasma is generated within the showerheads and the raw material gas sprayed into the plasma is constantly maintained, thus forming a uniform thin film on a wafer or a substrate.

Abstract: A structure of a lower electrode of a capacitor includes a first lower electrode, second lower electrodes formed at both sides of the first lower electrode and electrically connected to and higher than the first lower electrode, and a Hemispherical Grain-Silicon (HSG-Si) layer formed on a top surface of the first lower electrode and inside walls of the second lower electrodes.

Abstract: A structure of a lower electrode of a capacitor includes a first lower electrode, second lower electrodes formed at both sides of the first lower electrode and electrically connected to and higher than the first lower electrode, and a Hemispherical Grain-Silicon (HSG-Si) layer formed on a top surface of the first lower electrode and inside walls of the second lower electrodes.

Abstract: Trench isolation structure includes a first conformal insulating film (preferably consisting of silicon nitride) which lines a trench etched in a silicon substrate, an insulating layer (preferably consisting of silicon dioxide) which caps the lines trench and thereby forms a cavity, and a gas (preferably consisting of carbon dioxide) within the cavity. Fabrication of the trench isolation structure is begun by depositing a first conformal insulating film onto the surface of a trench etched in a silicon substrate, thereby forming a lined trench. An amorphous carbon layer is deposited within the lined trench and the lined trench is capped by an insulating layer which encloses the amorphous carbon within a cavity. The solid amorphous carbon within the cavity is converted to carbon dioxide gas by annealing the substrate in an oxidizing ambient. Planarizing the insulating layer to the level of the substrate completes fabrication of the trench isolation structure.