Abstract: A semiconductor device includes a substrate including a cell array region and a peripheral circuit region, capacitors on the cell array region of the substrate, peripheral transistors on the peripheral circuit region of the substrate, a first upper interlayer insulating layer on the capacitors and the peripheral transistors, a first upper contact electrically connected to at least one of the peripheral transistors, the first upper contact penetrating the first upper interlayer insulating layer, a first upper interconnection line provided on the first upper interlayer insulating layer and electrically connected to the first upper contact, a second upper interlayer insulating layer covering the first upper interconnection line, and a first blocking layer between the first upper interlayer insulating layer and the second upper interlayer insulating layer. The first blocking layer is absent between the first upper interconnection line and the first upper interlayer insulating layer.

Abstract: A package comprising a substrate, a first antenna device, and an integrated device. The substrate comprising a first surface and a second surface, where the substrate comprises a plurality of interconnects. The first antenna device is coupled to the first surface of the substrate, through a first plurality of solder interconnects. The integrated device is coupled to the second surface of the substrate. The package may include an encapsulation layer located over the second surface of the substrate, where the encapsulation layer encapsulates the integrated device. The package may include a shield formed over a surface of the encapsulation layer, where the shield includes an electromagnetic interference (EMI) shield.

Abstract: A film depositing composition including a Group 4 metal element-containing precursor compound and a method for forming a Group 4 metal element-containing film using same is described. The use of the film depositing composition including a Group 4 metal element-containing precursor compound achieves self-limiting film growth of ALD over a wide temperature range from low to high temperatures, enabling the formation of a Group 4 metal element-containing film for various purposes at various process temperatures. Particularly, according to the method for forming a Group 4 metal element-containing film of this invention, the growth per cycle (GPC) of ALD is consistent over a broad temperature range, thus making it possible to form a Group 4 metal element-containing film of uniform thickness even on surfaces with large aspect ratio trenches. Thus, the method can be advantageously utilized in manufacturing various semiconductor devices, such as DRAM, 3D NAND flash memory, and the like.

Abstract: A digitizer includes a first sensing coil disposed in an active region, a first dummy line disposed in the same layer as the first sensing coil, a second sensing coil disposed below the first sensing coil in the active region, a second dummy line disposed in the same layer as the second sensing coil, a bridge line disposed below the second sensing coil, and a third dummy line disposed in the same layer as the bridge line. At least two dummy lines among the first, second, and third dummy lines extend in the same direction.

Abstract: A method of estimating active noise control performance of a vehicle includes performing ANC by reproducing an acoustic signal for reducing noise introduced from the outside to the inside of the vehicle through a speaker and receiving a residual signal remaining after noise reduction from a microphone, generating an estimation signal for a control signal for controlling output of the speaker such that the acoustic signal is reproduced during the ANC, generating an estimation signal for original noise before the ANC based on the residual signal and the estimation signal for the control signal, and estimating noise reduction performance based on the estimation signal for the original noise and the residual signal.

Abstract: An active noise control method and system for a vehicle are provided. The active noise control method for a vehicle includes performing active noise control (ANC) to reduce noise introduced from the outside of the vehicle to the inside of the vehicle and received through a microphone, determining whether a level of residual noise of the noise reduced by the ANC is greater than a threshold value, and performing secondary path model re-measurement when an engine of the vehicle is turned off if the level of the residual noise is greater than the threshold value.

Abstract: A lane change control apparatus includes a processor configured to generate a second lane change path according to a head angle of a vehicle at a current position of the vehicle to try lane change again in response to a case where the lane change is canceled while the vehicle is performing the lane change according to a first lane change path and then the cancellation of the lane change is withdrawn while the vehicle is returning to an original lane of the vehicle; and a storage configured to store data and algorithms driven by the processor.

Abstract: Disclosed are an interfacing method and an apparatus for three-dimensional (3D) sketch. According to an example embodiment, the interfacing method for sketching in a virtual space of three dimensions includes determining a surface including an area in which a first user input is received in the virtual space to be a region of interest, controlling a position of the region of interest in the virtual space based on a second user input on the region of interest, and generating at least one sketch line belonging to the region of interest based on a third user input.

Abstract: Disclosed is an apparatus for processing a substrate, the apparatus including: a chamber for forming a processing space in which a processing process for a substrate is performed therein by a combination of a first body and a second body; and a driver for moving any one of the first body or the second body relative to the other such that a relative position between the first body and the second body is changeable between a sealed position at which the processing space is sealed from the outside and an open position at which the processing space is opened, in which the first body is formed with a first protrusion on a face that is in contact with the second body, the second body is formed with a first receiving portion, and the first protrusion is provided to be inserted into the first receiving portion when the first body and the second body are at the sealed position.

Abstract: A method of fabricating a semiconductor device. A cell area and a core area are defined in a substrate. A bit line structure disposed in the cell area is provided. A gate structure disposed in the core area is provided, and a core capping film disposed on the gate structure is provided. A height of the core capping film is greater than a height of the bit line structure. A first contact film is formed on the bit line structure. A second contact film is formed on the core capping film. A mask is formed on the first contact film. An upper surface of the core capping film is exposed using the mask. The first contact film is etched until a height of the first contact film becomes less than a height of the bit line structure using an etching process. In the etching process, an etching rate for the first contact film is greater than etching rates for the bit line structure and the core capping film.

Abstract: A semiconductor device includes a substrate including a cell array region and a peripheral circuit region, capacitors on the cell array region of the substrate, peripheral transistors on the peripheral circuit region of the substrate, a first upper interlayer insulating layer on the capacitors and the peripheral transistors, a first upper contact electrically connected to at least one of the peripheral transistors, the first upper contact penetrating the first upper interlayer insulating layer, a first upper interconnection line provided on the first upper interlayer insulating layer and electrically connected to the first upper contact, a second upper interlayer insulating layer covering the first upper interconnection line, and a first blocking layer between the first upper interlayer insulating layer and the second upper interlayer insulating layer. The first blocking layer is absent between the first upper interconnection line and the first upper interlayer insulating layer.

Abstract: An autonomous driving control apparatus and a method for generating a driving path thereof are provided. The autonomous driving control apparatus includes a processor that receives a driving path from a navigation device. The processor is configured to determine whether there is a turn section on the driving path, determines a turn path, a curvature of which continuously changes in response to determining that there is the turn section on the driving path, and outputs the turn path.

Abstract: The present invention provides heterocyclic compounds, the stereoisomer thereof, the enantiomer thereof, or the pharmaceutically acceptable salt, which are capable of modulating the activity of Mer receptor tyrosine kinase (MERTK). This invention also provides pharmaceutical compositions thereof, methods to prepare the said compounds, and the use of such compounds as a medicament. The present invention is directed to MERTK inhibitory compounds with marked potency, thereby having an outstanding potential for a pharmaceutical intervention of cancer and any other diseases related to MERTK dysregulation.

Abstract: A display device includes a display module which includes a first non-folding area, a folding area, and a second non-folding area, and a digitizer which includes a first area overlapping the first non-folding area and a portion of the folding area, a second area overlapping the folding area, and a third area overlapping a portion of the folding area and the second non-folding area, where a plurality of holes is defined in the second area through the digitizer, and the digitizer includes a base layer, a plurality of first coils, a plurality of second coils, first signal lines which are connected to the plurality of first coils, overlap the first area, the second area, and the third area, and do not overlap the plurality of holes, and second signal lines connected to the plurality of second coils and overlapping the third area.

Abstract: The present disclosure relates to a reverse-time migration method for marine vertical cable seismic (VCS) survey data and provides a reverse-time migration apparatus and method for vertical cable seismic (VCS) survey data using directional propagation of receiver wavefields, configured to perform equation-of-motion-based transform and inverse-transform processing on observed pressure wavefields during back-propagation of receiver wavefields to solve the problem of reflection boundary screening due to long-wavelength artifacts and avoid up/down wavefield separation to thereby simplify a migration process and improve overall quality of migration images.

Abstract: A display device includes a light emitting element layer on a substrate, a light control layer on the light emitting element layer, the light control layer including a light-transmitting film and a light-shielding film, and a first alignment mark between the substrate and the light control layer, the light-transmitting film and the light-shielding film alternate with each other, the light control layer includes a light-shielding film removal area in which the light-shielding film is not disposed, and the light-shielding film removal area overlaps the first alignment mark.

Abstract: A method of optimizing driving of an antenna for communication of an artificial satellite, by controlling a rotation angle of the antenna, according to an embodiment of the disclosure, includes: receiving a basic profile indicating a change in a rotation angle of the antenna such that a center line of the antenna points to a ground station in response to movement of the artificial satellite; determining a processing section with reference to points at which a rotation velocity of the antenna, for the basic profile, is zero; and generating an optimization profile that determines the change in the rotation angle of the antenna by configuring the rotation velocity of the antenna, for the processing section, with a preset optimized rotation velocity.

Abstract: Disclosed is a liveness test method and liveness test apparatus. The liveness test method includes determining a presence of a subject using a radar sensor, performing a first liveness test on the subject based on radar data obtained by the radar sensor, in response to the subject being present, acquiring image data of the subject using an image sensor, in response to a result of the first liveness test satisfying a first condition, and performing a second liveness test on the subject based on the image data.

Abstract: A display device includes a display panel including a first non-folding area, a second non-folding area, and a folding area that are arranged along a first direction, the folding area being foldable along a folding line extending along a second direction intersecting the first direction, a panel lower member disposed below the display panel, and a digitizer disposed below the panel lower member and including a base layer and sensing coils. The base layer includes a folding portion including holes overlapping the folding area of the display panel and first and second non-folding portions disposed along the first direction. The folding portion is disposed between the first and second non-folding portions. The sensing coils are disposed on the base layer, and the base layer includes a matrix including a filler and an elastomer and weaving-shaped fiber lines disposed inside the matrix and alternately arranged with each other.

Abstract: Electronic devices that include a routing substrate with lower inductance path for a capacitor, and related fabrication methods. In exemplary aspects, to provide lower interconnect inductance for a capacitor coupled to a power distribution network in the routing substrate, an additional metal layer that provides an additional, second power plane is disposed in a dielectric layer between adjacent metal layers in adjacent metallization layers. The additional, second power plane is adjacent to a first power plane disposed in a first metal layer of one of the adjacent metallization layers. The disposing of the additional metal layer in the dielectric layer of the metallization layer reduces the thickness of the dielectric material between the first and second power planes coupled to the capacitor as part of the power distribution network. This reduced dielectric thickness between first and second power planes coupled to the capacitor reduces the interconnect inductance for the capacitor.