Abstract: A semiconductor package includes a base package substrate, a first semiconductor chip, and a second semiconductor chip. The base package substrate includes a redistribution region where a redistribution layer is provided, a plurality of vertical conductive vias connected to the redistribution layer, and a recess region recessed from an upper surface of the redistribution region. The base package substrate further includes an interposer in the recess region, the interposer comprising a substrate, a plurality of upper pads disposed at an upper surface of the substrate, and plurality of through electrodes respectively connected to the plurality of upper pads to pass through the substrate. The first semiconductor chip and second semiconductor chip, each include a plurality of conductive interconnection terminals respectively connected to the plurality of upper pads and the vertical conductive vias exposed at the upper surface of the redistribution region.

Abstract: A transmitting and receiving circuit may include a first CMOS inverter configured to receive a first power supply signal and a first input signal. The transmitting and receiving circuit may include a first calculation amplifier including a non-inverted input terminal connected to an output terminal of the first CMOS inverter, and a first resistor connected between the output terminal of the first calculation amplifier and a first node. The output terminal of the first calculation amplifier and an inverted input terminal of the first calculation amplifier may be connected to each other. A first output signal may have a level smaller than that of the first input signal and may be output to the first node.

Abstract: A semiconductor package includes a base package substrate, a first semiconductor chip, and a second semiconductor chip. The base package substrate includes a redistribution region where a redistribution layer is provided, a plurality of vertical conductive vias connected to the redistribution layer, and a recess region recessed from an upper surface of the redistribution region. The base package substrate further includes an interposer in the recess region, the interposer comprising a substrate, a plurality of upper pads disposed at an upper surface of the substrate, and plurality of through electrodes respectively connected to the plurality of upper pads to pass through the substrate. The first semiconductor chip and second semiconductor chip, each include a plurality of conductive interconnection terminals respectively connected to the plurality of upper pads and the vertical conductive vias exposed at the upper surface of the redistribution region.

Abstract: An interposer includes: a base substrate; an interconnection structure on a top surface of the base substrate and including a metal interconnection pattern; an upper passivation layer on the interconnection structure and having compressive stress; a lower passivation layer under a bottom surface of base substrate, the lower passivation layer having compressive stress that is less than the compressive stress of the upper passivation layer; a lower conductive layer under the lower passivation layer; and a through electrode penetrating the base substrate and the lower passivation layer. The through electrode electrically connects the lower conductive layer to the metal interconnection pattern of the interconnection structure.

Abstract: A semiconductor package includes a base package substrate, a first semiconductor chip, and a second semiconductor chip. The base package substrate includes a redistribution region where a redistribution layer is provided, a plurality of vertical conductive vias connected to the redistribution layer, and a recess region recessed from an upper surface of the redistribution region. The base package substrate further includes an interposer in the recess region, the interposer comprising a substrate, a plurality of upper pads disposed at an upper surface of the substrate, and plurality of through electrodes respectively connected to the plurality of upper pads to pass through the substrate. The first semiconductor chip and second semiconductor chip, each include a plurality of conductive interconnection terminals respectively connected to the plurality of upper pads and the vertical conductive vias exposed at the upper surface of the redistribution region.

Abstract: A method of fabricating a semiconductor package includes forming a capping pattern on a chip pad of a semiconductor device. The semiconductor device includes a passivation pattern that exposes a portion of the chip pad, and the capping pattern covers the chip pad. The method further includes forming a redistribution layer on the capping pattern. Forming the redistribution layer includes forming a first insulation pattern on the capping pattern and the passivation pattern, forming a first opening in the first insulation pattern by performing exposure and development processes on the first insulation pattern, in which the first opening exposes a portion of the capping pattern, and forming a redistribution pattern in the first opening.

Abstract: A semiconductor package includes a base package substrate, a first semiconductor chip, and a second semiconductor chip. The base package substrate includes a redistribution region where a redistribution layer is provided, a plurality of vertical conductive vias connected to the redistribution layer, and a recess region recessed from an upper surface of the redistribution region. The base package substrate further includes an interposer in the recess region, the interposer comprising a substrate, a plurality of upper pads disposed at an upper surface of the substrate, and plurality of through electrodes respectively connected to the plurality of upper pads to pass through the substrate. The first semiconductor chip and second semiconductor chip, each include a plurality of conductive interconnection terminals respectively connected to the plurality of upper pads and the vertical conductive vias exposed at the upper surface of the redistribution region.

Abstract: An organic light-emitting diode display may have rounded corners. A negative power supply path may be used to distribute a negative voltage to a cathode layer, while a positive power supply path may be used to distribute a positive power supply voltage to each pixel in the display. The positive power supply path may have a cutout that is occupied by the negative power supply path to decrease resistance of the negative power supply path in a rounded corner of the display. To mitigate reflections caused by the positive power supply path being formed over tightly spaced data lines, the positive power supply path may be omitted in a rounded corner of the display, a shielding layer may be formed over the positive power supply path in the rounded corner, or non-linear gate lines may be formed over the positive power supply path.

Abstract: A semiconductor package includes a base package substrate, a first semiconductor chip, and a second semiconductor chip. The base package substrate includes a redistribution region where a redistribution layer is provided, a plurality of vertical conductive vias connected to the redistribution layer, and a recess region recessed from an upper surface of the redistribution region. The base package substrate further includes an interposer in the recess region, the interposer comprising a substrate, a plurality of upper pads disposed at an upper surface of the substrate, and plurality of through electrodes respectively connected to the plurality of upper pads to pass through the substrate. The first semiconductor chip and second semiconductor chip, each include a plurality of conductive interconnection terminals respectively connected to the plurality of upper pads and the vertical conductive vias exposed at the upper surface of the redistribution region.

Abstract: A semiconductor package includes a substrate and an interposer disposed on the substrate. The interposer comprises a first surface facing the substrate and a second surface facing away from the substrate. A first logic semiconductor chip is disposed on the first surface of the interposer and is spaced apart from the substrate in a first direction orthogonal to an upper surface of the substrate. A first memory package is disposed on the second surface of the interposer. A second memory package is disposed on the second surface of the interposer and is spaced apart from the first memory package in a second direction that is parallel to the upper surface of the substrate. A first heat transfer unit is disposed on a surface of the substrate facing the first logic semiconductor chip. The first heat transfer unit is spaced apart from the first logic semiconductor chip in the first direction.

Abstract: An interposer includes: a base substrate; an interconnection structure on a top surface of the base substrate and including a metal interconnection pattern; an upper passivation layer on the interconnection structure and having compressive stress; a lower passivation layer under a bottom surface of base substrate, the lower passivation layer having compressive stress that is less than the compressive stress of the upper passivation layer; a lower conductive layer under the lower passivation layer; and a through electrode penetrating the base substrate and the lower passivation layer. The through electrode electrically connects the lower conductive layer to the metal interconnection pattern of the interconnection structure.

Abstract: An interposer includes: a base substrate; an interconnection structure on a top surface of the base substrate and including a metal interconnection pattern; an upper passivation layer on the interconnection structure and having compressive stress; a lower passivation layer under a bottom surface of base substrate, the lower passivation layer having compressive stress that is less than the compressive stress of the upper passivation layer; a lower conductive layer under the lower passivation layer; and a through electrode penetrating the base substrate and the lower passivation layer. The through electrode electrically connects the lower conductive layer to the metal interconnection pattern of the interconnection structure.

Abstract: A method of fabricating a semiconductor package includes forming a capping pattern on a chip pad of a semiconductor device. The semiconductor device includes a passivation pattern that exposes a portion of the chip pad, and the capping pattern covers the chip pad. The method further includes forming a redistribution layer on the capping pattern. Forming the redistribution layer includes forming a first insulation pattern on the capping pattern and the passivation pattern, forming a first opening in the first insulation pattern by performing exposure and development processes on the first insulation pattern, in which the first opening exposes a portion of the capping pattern, and forming a redistribution pattern in the first opening.

Abstract: A method of fabricating a semiconductor package includes forming a capping pattern on a chip pad of a semiconductor device. The semiconductor device includes a passivation pattern that exposes a portion of the chip pad, and the capping pattern covers the chip pad. The method further includes forming a redistribution layer on the capping pattern. Forming the redistribution layer includes forming a first insulation pattern on the capping pattern and the passivation pattern, forming a first opening in the first insulation pattern by performing exposure and development processes on the first insulation pattern, in which the first opening exposes a portion of the capping pattern, and forming a redistribution pattern in the first opening.

Abstract: A semiconductor package includes a substrate and an interposer disposed on the substrate. The interposer comprises a first surface facing the substrate and a second surface facing away from the substrate. A first logic semiconductor chip is disposed on the first surface of the interposer and is spaced apart from the substrate in a first direction orthogonal to an upper surface of the substrate. A first memory package is disposed on the second surface of the interposer. A second memory package is disposed on the second surface of the interposer and is spaced apart from the first memory package in a second direction that is parallel to the upper surface of the substrate. A first heat transfer unit is disposed on a surface of the substrate facing the first logic semiconductor chip. The first heat transfer unit is spaced apart from the first logic semiconductor chip in the first direction.

Abstract: An organic light-emitting diode display may have rounded corners. A negative power supply path may be used to distribute a negative voltage to a cathode layer, while a positive power supply path may be used to distribute a positive power supply voltage to each pixel in the display. The positive power supply path may have a cutout that is occupied by the negative power supply path to decrease resistance of the negative power supply path in a rounded corner of the display. To mitigate reflections caused by the positive power supply path being formed over tightly spaced data lines, the positive power supply path may be omitted in a rounded corner of the display, a shielding layer may be formed over the positive power supply path in the rounded corner, or non-linear gate lines may be formed over the positive power supply path.

Abstract: An interposer includes: a base substrate; an interconnection structure on a top surface of the base substrate and including a metal interconnection pattern; an upper passivation layer on the interconnection structure and having compressive stress; a lower passivation layer under a bottom surface of base substrate, the lower passivation layer having compressive stress that is less than the compressive stress of the upper passivation layer; a lower conductive layer under the lower passivation layer; and a through electrode penetrating the base substrate and the lower passivation layer. The through electrode electrically connects the lower conductive layer to the metal interconnection pattern of the interconnection structure.

Abstract: A method for manufacturing an interposer provides for disposing a lower insulating layer on a second surface opposite to a first surface of an interposer substrate. A first alignment key on the first surface is aligned with a first photomask. The lower insulating layer is patterned with the first photomask to form a lower circuit pattern and a second alignment key on the second surface. A lower metal layer is formed on the lower insulating layer. The second alignment key is aligned with a second photomask and a photoresist layer is patterned on the lower metal layer to expose the lower circuit pattern using the second photomask.

Abstract: An organic light-emitting diode display may have rounded corners. A negative power supply path may be used to distribute a negative voltage to a cathode layer, while a positive power supply path may be used to distribute a positive power supply voltage to each pixel in the display. The positive power supply path may have a cutout that is occupied by the negative power supply path to decrease resistance of the negative power supply path in a rounded corner of the display. To mitigate reflections caused by the positive power supply path being formed over tightly spaced data lines, the positive power supply path may be omitted in a rounded corner of the display, a shielding layer may be formed over the positive power supply path in the rounded corner, or non-linear gate lines may be formed over the positive power supply path.

Abstract: A semiconductor package includes upper and lower semiconductor chip packages, and a redistribution wiring layer pattern interposed between the packages. The lower package includes a molding layer in which at least one chip is embedded, and has a top surface and an inclined sidewall surface along which the redistribution wiring layer pattern is formed. The upper and lower packages are electrically connected to through the redistribution wiring layer pattern. A first package may be formed by a wafer level packaging technique and may include a redistribution wiring layer as a substrate, a semiconductor chip disposed on the redistribution wiring layer, and a molding layer on which the lower package, redistribution wiring layer pattern and upper package are disposed.