Patents by Inventor Kwan Young Oh

Kwan Young Oh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7280127
    Abstract: The present invention relates to a scanning apparatus for a laser printer. More particularly, the present invention relates to a scanning apparatus, which is formed to allow a light modulator to be non-perpendicular to the shaft of a photosensitive drum, which is a scanning object, thus performing scanning at a higher resolution and speed within the allowable limits of other devices. The scanning apparatus of the present invention includes an optical means, a rotating mirror, a conversion means, and a drum-shaped scanning object.
    Type: Grant
    Filed: April 27, 2005
    Date of Patent: October 9, 2007
    Assignee: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Gi Lyong Na, Wook Hee Lee, Kwan Young Oh
  • Publication number: 20070109241
    Abstract: A method and system for adjusting a gray-scale level of an LCD device. The method includes: checking a default gray-scale value A; comparing default brightness value YA with a target brightness value YX; inputting a trial gray-scale value B; and outputting a target gray-scale value X. The method employs a preselected Similarity of Triangles technique. The system employs a image-capturing unit determining screen brightness and a control unit using a preselected Similarity of Triangles technique to adjust the gray-scale level of a connected display device, reducing a single-screen-capture gray-scale level adjustment interval to about 1.8 to 2.1 seconds.
    Type: Application
    Filed: November 14, 2006
    Publication date: May 17, 2007
    Inventors: Seung-Won Lee, Jae-Ho Oh, Kwan-Young Oh
  • Patent number: 7213921
    Abstract: A color display device is disclosed. The color display device includes an illumination lens system, a diffractive light modulation system, a combining system, a Fourier filter system, and a projection system. The illumination lens system converts a plurality of light beams into linear parallel light beams. The diffractive light modulation system produces a plurality of diffracted light beams having a plurality of diffraction orders by modulating each of the plurality of parallel light beams that are almost perpendicularly incident from the illumination lens system, The combining system focuses the plurality of diffracted light beams having the plurality of diffraction orders. The Fourier filter system selects diffracted light beams having desired diffraction orders using a dichroic filter. The projection system focuses the diffracted light beams on an object, and allowing the focused diffracted light beams to scan the object.
    Type: Grant
    Filed: June 21, 2005
    Date of Patent: May 8, 2007
    Assignee: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Haeng Seok Yang, Dong Ho Shin, Kwan Young Oh, Jun Won An, Sang Kyeong Yun
  • Patent number: 5943570
    Abstract: A capacitor for a semiconductor memory device and a method for manufacturing the same are provided. A lower electrode of a capacitor according to the present invention has a structure in which a first conductive layer and a second conductive layer are sequentially deposited and an HSG is selectively formed on the surface thereof. The first conductive layer is composed of an amorphous or a polycrystalline silicon film having a low concentration of impurities. The second conductive layer is composed of an amorphous silicon film having a high concentration of impurities. According to the present invention, it is possible to obtain a desirable Cmin/Cmax ratio in the lower electrode of the capacitor having an HSG silicon layer and to prevent diffusion of impurities from the lower electrode of the capacitor.
    Type: Grant
    Filed: January 8, 1997
    Date of Patent: August 24, 1999
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Young-wook Park, Young-sun Kim, Seung-hee Nam, Se-jin Shim, Cha-young Yoo, Kwan-young Oh
  • Patent number: 5674782
    Abstract: A method for efficiently removing by-products produced in dry-etching a fabricated structure of a semiconductor device, particularly, a polycide structure. The method includes the steps of sequentially forming a polysilicon layer and a refractory metal silicide layer to overlie previously fabricated structures on a semiconductor substrate, dry-etching the polysilicon layer and the refractory metal silicide layer to form a patterned polysilicon layer and a patterned refractory metal silicide layer, and thermal treating the resultant structure to remove at least one kind of by-product produced in the dry-etching step at a temperature higher than the boiling point of any by-product.
    Type: Grant
    Filed: March 4, 1996
    Date of Patent: October 7, 1997
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Nae-in Lee, Moon-han Park, Young-wug Kim, Kwan-young Oh