Patents by Inventor Kwan-Young Yun

Kwan-Young Yun has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Methods of manufacturing capacitor and semiconductor device including the same
    Patent number: 8263456
    Abstract: A capacitor includes a first capacitor structure on a substrate, the first capacitor structure including a first electrode, a first dielectric layer pattern, and a second electrode, a second capacitor structure on the first capacitor structure, the second capacitor structure including a third electrode, a second dielectric layer pattern, and a fourth electrode, at least one first contact pad on a side of the first electrode, and a wiring structure connecting the at least one first contact pad and the fourth electrode.
    Type: Grant
    Filed: June 3, 2011
    Date of Patent: September 11, 2012
    Assignee: Samsung Electronics Co., Ltd.
    Inventor: Kwan-Young Yun
  • METHODS OF MANUFACTURING CAPACITOR AND SEMICONDUCTOR DEVICE INCLUDING THE SAME
    Publication number: 20110237044
    Abstract: A capacitor includes a first capacitor structure on a substrate, the first capacitor structure including a first electrode, a first dielectric layer pattern, and a second electrode, a second capacitor structure on the first capacitor structure, the second capacitor structure including a third electrode, a second dielectric layer pattern, and a fourth electrode, at least one first contact pad on a side of the first electrode, and a wiring structure connecting the at least one first contact pad and the fourth electrode.
    Type: Application
    Filed: June 3, 2011
    Publication date: September 29, 2011
    Applicant: Samsung Electronics Co., Ltd.
    Inventor: Kwan-Young YUN
  • Capacitor and semiconductor device including the same
    Patent number: 7956440
    Abstract: A capacitor includes a first capacitor structure on a substrate, the first capacitor structure including a first electrode, a first dielectric layer pattern, and a second electrode, a second capacitor structure on the first capacitor structure, the second capacitor structure including a third electrode, a second dielectric layer pattern, and a fourth electrode, at least one first contact pad on a side of the first electrode, and a wiring structure connecting the at least one first contact pad and the fourth electrode.
    Type: Grant
    Filed: December 5, 2008
    Date of Patent: June 7, 2011
    Assignee: Samsung Electronics Co., Ltd.
    Inventor: Kwan-Young Yun
  • Capacitor and semiconductor device including the same
    Publication number: 20090146257
    Abstract: A capacitor includes a first capacitor structure on a substrate, the first capacitor structure including a first electrode, a first dielectric layer pattern, and a second electrode, a second capacitor structure on the first capacitor structure, the second capacitor structure including a third electrode, a second dielectric layer pattern, and a fourth electrode, at least one first contact pad on a side of the first electrode, and a wiring structure connecting the at least one first contact pad and the fourth electrode.
    Type: Application
    Filed: December 5, 2008
    Publication date: June 11, 2009
    Inventor: Kwan-Young Yun