Abstract: A color charge-coupled device is disclosed including plural light detectors corresponding to first to third colors and plural charge transmission regions on a semiconductor substrate; a pad on one side of the substrate excluding a portion where the light detectors and charge transmission regions are formed; a planarizing film on the substrate excluding the pad; microlenses on the planarizing film above the light detectors; and first to third color filter layers on each microlens excluding the edge portion.

Abstract: A CCD and manufacturing method thereof is disclosed including: a first conductivity-type substrate having a convex portion; a first conductivity-type charge transmission domain formed on the substrate excluding the convex portion; a light detecting domain formed on the convex portion of the substrate and having a convex top surface; a second conductivity-type high-concentration impurity area formed on the top surface of the light detecting domain; a gate insulating layer formed on the substrate excluding the light detecting domain; a transmission gate formed on the gate insulating layer; a planarization layer formed on the substrate including the transmission gate; and a microlens formed on the planarization layer above a photodiode.

Abstract: A CCD and manufacturing method thereof is disclosed including: a first conductivity-type substrate having a convex portion; a first conductivity-type charge transmission domain formed on the substrate excluding the convex portion; a light detecting domain formed on the convex portion of the substrate and having a convex top surface; a second conductivity-type high-concentration impurity area formed on the top surface of the light detecting domain; a gate insulating layer formed on the substrate excluding the light detecting domain; a transmission gate formed on the gate insulating layer; a planarization layer formed on the substrate including the transmission gate; and a microlens formed on the planarization layer above a photodiode.

Abstract: A method of manufacturing a color charge-coupled device is disclosed including the steps of alternately forming a plurality of light detectors corresponding to first to third colors and a plurality of charge transmission regions on a semiconductor substrate; forming a pad on one side of the substrate excluding a portion where the light detectors and charge transmission regions are formed; forming a planarizing film on the substrate excluding the pad; coating a microlens material on the planarizing film and patterning the microlens material so as to be left only on the planarizing film above the light detectors; thermally flowing the microlens material, to thereby form microlenses on the planarizing film above the light detectors; and hard-baking first to third dyeing layer, to thereby form first to third color filter layers on each microlens excluding the edge portion.

Abstract: This invention relates to microlenses of the solid state image sensing element and the method for fabricating the microlenses of the solid image sensing elements, which provides a solid state image sensing element including a substrate, photo diode areas each having a plurality of photo diodes in matrix array formed on the substrate, a flat area formed over the substrate including the photo diode areas, color filter layers formed in predetermined areas on the flat area, a top coating layer formed over the substrate including the color filter areas, stripe microlenses each having a flat upper surface arranged correspond corresponding to the photo diodes arranged in one direction in the photo diode areas and formed on the top coating layer, and mosaic microlenses formed on the flat upper surface of the stripe microlens each arranged corresponding to each of the photo diodes in the photo diode area.