Abstract: Provided are a light emitting apparatus and a surface light source apparatus having the same. The light emitting apparatus comprises a package body, a first color light emitting part in a first cavity of the package body, and a second color light emitting part in a second cavity of the package body. The package body comprises a plurality of cavities.

Abstract: Disclosed is a light emitting diode having a multi-cell structure including a number of unit cells. The light emitting diode is capable of reducing light loss of the light emitting diode surface and improving light efficiency by bonding pads to be formed for contact between mesa etching regions for forming an electrode of the existing n-type semiconductor layers and p-type semiconductor layers. The light emitting diode is also capable of controlling chip size and manufacturing chips of different sizes from each other even when going through the same chip manufacturing process as the related art.

Abstract: The present invention relates to a touch panel, more specifically a piezoresistive type touch panel. According to the present invention, it is provided a manufacturing method of a piezoresistive type touch panel, comprising manufacturing a polymer membrane in which a piezoresistive type film pattern, of which resistance varies with applied pressure, is embedded; manufacturing a spacer layer and attaching one side of the spacer layer to a surface of the polymer membrane; and then attaching a bottom substrate to the other side of the spacer layer.

Abstract: A semiconductor light emitting device package according to an embodiment comprising: a package body comprising a groove section; an electrode in the groove section; at least one semiconductor light emitting device electrically connected to the electrode in the groove section of the package body; an interconnection pattern on an outer peripheral surface of the package body and electrically connected to the electrode, wherein a part of the interconnection pattern is on a bottom surface of the package body; and a metal pattern is on the bottom surface of the package body corresponding to an area in which the semiconductor light emitting device is located.

Abstract: Provided is a light-emitting diode having a wavelength conversion material and a method for fabricating the same. The light-emitting diode comprises: a base structure; a light-emitting diode chip arranged on the base structure; and a wavelength conversion material layer arranged on the light-emitting diode chip, such that the area adjacent the upper surface of the light-emitting diode chip is thicker than the area adjacent to the side surface of the light-emitting diode chip. In addition, the method for fabricating a light-emitting diode comprises: a step of arranging the light-emitting diode chip on the base structure; and a step of arranging a wavelength conversion material layer containing a light-transmitting photocurable material on the light-emitting diode chip, such that the area thereof adjacent to the upper surface of the light-emitting diode chip is thicker than the area thereof adjacent to the side surface of the light-emitting diode chip.

Abstract: A light emitting device includes a package body including a multilayer cavity; a first light emitting part including a first light emitting device in a first cavity of a first layer area of the multilayer cavity, and a second light emitting part including a second light emitting device in a second cavity of a second layer area higher than the first layer area.

Abstract: Disclosed herein are a force realization apparatus using a superconducting flux quantum, which is capable of generating force proportional to a flux quantum number by including a micron-sized superconducting annulus or superconducting quantum interference device in an ultra-sensitive cantilever, and a force measurer using the same.

Abstract: A semiconductor light emitting device package including a main body including a supporting member and an outside member on the supporting member; at least one semiconductor light emitting device disposed on the supporting member in which the outside member at least partially surrounds the at least one semiconductor light emitting device; first and second electrodes, at least one electrode of the first and second electrodes at least partially extending under the at least one semiconductor light emitting device; a metallic member disposed under the at least one semiconductor light emitting device and extending beyond outside edges of the at least one semiconductor light emitting device; a first molding part surrounded by the outside member and covering the at least one semiconductor light emitting device; and a second molding part disposed on the first molding part, the second molding part formed in a domed shape. Further, the first and second electrodes also extend to a bottom surface of the supporting member.

Abstract: A semiconductor light emitting device package according to an embodiment comprising: a package body comprising a groove section; an electrode in the groove section; at least one semiconductor light emitting device electrically connected to the electrode in the groove section of the package body; an interconnection pattern on an outer peripheral surface of the package body and electrically connected to the electrode, wherein a part of the interconnection pattern is on a bottom surface of the package body; and a metal pattern is on the bottom surface of the package body corresponding to an area in which the semiconductor light emitting device is located.

Abstract: Disclosed herein is a method of fabricating nano-components using nanoplates, including the steps of: printing a grid on a substrate using photolithography and Electron Beam Lithography; spraying an aqueous solution dispersed with nanoplates onto the grid portion to position the nanoplates on the substrate; depositing a protective film of a predetermined thickness on the substrate and the nanoplates positioned on the substrate; ion-etching the nanoplates deposited with the protective film by using a Focused Ion Beam (FIB) or Electron Beam Lithography; and eliminating the protective film remaining on the substrate using a protective film remover after the ion-etching of the nanoplates, and a method of manufacturing nanomachines or nanostructures by transporting such nano-components using a nano probe and assembling with other nano-components.

Abstract: A light emitting device is provided. The light emitting device comprises: a package body comprising a multilayer cavity; a first light emitting part comprising a first light emitting device in a first cavity of a first layer area of the multilayer cavity; and a second light emitting part comprising a second light emitting device in a second cavity of a second layer area higher than the first layer area.

Abstract: Provided are a light emitting apparatus and a surface light source apparatus having the same. The light emitting apparatus comprises a package body, a first color light emitting part in a first cavity of the package body, and a second color light emitting part in a second cavity of the package body. The package body comprises a plurality of cavities.

Abstract: Disclosed herein are a force realization apparatus using a superconducting flux quantum, which is capable of generating force proportional to a flux quantum number by including a micron-sized superconducting annulus or superconducting quantum interference device in an ultra-sensitive cantilever, and a force measurer using the same. The quantum-based force realization apparatus includes: superconducting quantum trap means having a magnetic moment proportional to a flux quantum number; an ultra-sensitive cantilever which mounts therein the superconducting quantum trap means, has elasticity and is displaced by force generated by the superconducting quantum trap means located in a magnetic field gradient; and a magnetic field generator which applies a magnetic field to the superconducting quantum trap means.

Abstract: A low-error fixed-width multiplier receives a W-bit input and produces a W-bit product. In an embodiment, a multiplier (Y) is encoded using modified Booth coding. The encoded multiplier (Y) and a multiplicand (X) are processed together to generate partial products. The partial products are accumulated to generate a product (P). To compensate for the quantization error, Booth encoder outputs are used for the generation of error compensation bias. The truncated bits are divided into two groups, a major least significant bit group and a minor least significant bit group, depending upon their effects on the quantization error. Different error compensation methods are applied to each group.