Patents by Inventor Kwang-Choong Kim

Kwang-Choong Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200337982
    Abstract: A cosmetics composition having improved water absorbability and oil absorbability is provided. The cosmetics composition effectively controls sweat and sebum, thereby making it possible to improve persistence of make-up and to keep skin from looking dull.
    Type: Application
    Filed: December 24, 2019
    Publication date: October 29, 2020
    Inventors: Ki-Jung KIM, Sang-Hoon KIM, Kwang-Choong KANG, Byung-Ki CHOI, Kwang-Soo LIM, Kil-Wan CHANG
  • Patent number: 10646423
    Abstract: The present invention relates to a cosmetic product having an excellent UV-blocking effect and a manufacturing method thereof, in which the cosmetic product has an excellent UV-blocking effect, shows reduced whitening, has a good feeling in use, and good adhesion to the skin, and is not glossy and sticky after application to the skin, and to a manufacturing method thereof. The cosmetic product having an excellent UV-blocking effect according to the present invention includes: a cosmetic composition; and a hollow pearlescent pigment added to the cosmetic composition in an amount of 1 to 15 parts by weight based on 100 parts by weight of the cosmetic composition.
    Type: Grant
    Filed: December 22, 2016
    Date of Patent: May 12, 2020
    Assignee: CQV CO., LTD.
    Inventors: Ki-Jung Kim, Sang-Hoon Kim, Kwang-Choong Kang, Byung-Ki Choi, Kwang-Soo Lim, Kil-Wan Chang
  • Patent number: 9130119
    Abstract: An (Al, Ga, In)N light emitting device, such as a light emitting diode (LED), in which high light generation efficiency is realized by fabricating the device on non-polar or semi-polar III-Nitride crystal geometries. Because non-polar and semi-polar emitting devices have significantly lower piezoelectric effects than c-plane emitting devices, higher efficiency emitting devices at higher current densities can be realized.
    Type: Grant
    Filed: December 11, 2007
    Date of Patent: September 8, 2015
    Assignees: The Regents of the University of California, Japan Science and Technology Agency
    Inventors: Steven P. DenBaars, Mathew C. Schmidt, Kwang Choong Kim, James S. Speck, Shuji Nakamura
  • Patent number: 9040327
    Abstract: A method for fabricating AlxGa1-xN-cladding-free nonpolar III-nitride based laser diodes or light emitting diodes. Due to the absence of polarization fields in the nonpolar crystal planes, these nonpolar devices have thick quantum wells that function as an optical waveguide to effectively confine the optical mode to the active region and eliminate the need for Al-containing waveguide cladding layers.
    Type: Grant
    Filed: June 13, 2012
    Date of Patent: May 26, 2015
    Assignee: The Regents of the University of California
    Inventors: Daniel F. Feezell, Mathew C. Schmidt, Kwang-Choong Kim, Robert M. Farrell, Daniel A. Cohen, James S. Speck, Steven P. DenBaars, Shuji Nakamura
  • Patent number: 8956896
    Abstract: A method of device growth and p-contact processing that produces improved performance for non-polar III-nitride light emitting diodes and laser diodes. Key components using a low defect density substrate or template, thick quantum wells, a low temperature p-type III-nitride growth technique, and a transparent conducting oxide for the electrodes.
    Type: Grant
    Filed: April 5, 2012
    Date of Patent: February 17, 2015
    Assignees: The Regents of the University of California, Japan Science and Technology Agency
    Inventors: Mathew C. Schmidt, Kwang Choong Kim, Hitoshi Sato, Steven P. DenBaars, James S. Speck, Shuji Nakamura
  • Patent number: 8716046
    Abstract: Disclosed herein is a light emitting device. The light emitting device includes an n-type nitride semiconductor layer; an active layer on the n-type semiconductor layer, an AlN/GaN layer of a super lattice structure formed by alternately growing an AlN layer and a GaN layer on the active layer, and a p-type nitride semiconductor layer on the AlN/GaN layer of the super lattice structure. At least one of the AlN layer and the GaN layer is doped with a p-type dopant. A method for manufacturing the light emitting device is also provided.
    Type: Grant
    Filed: August 4, 2009
    Date of Patent: May 6, 2014
    Assignee: Seoul Opto Device Co., Ltd.
    Inventors: Gyu Beom Kim, Sang Joon Lee, Chang Suk Han, Kwang Choong Kim
  • Patent number: 8716048
    Abstract: Disclosed herein is a light emitting device. The light emitting device includes an n-type nitride semiconductor layer; an active layer on the n-type semiconductor layer, an AlN/GaN layer of a super lattice structure formed by alternately growing an AlN layer and a GaN layer on the active layer, and a p-type nitride semiconductor layer on the AlN/GaN layer of the super lattice structure. At least one of the AlN layer and the GaN layer is doped with a p-type dopant. A method for manufacturing the light emitting device is also provided.
    Type: Grant
    Filed: May 6, 2010
    Date of Patent: May 6, 2014
    Assignee: Seoul Opto Device Co., Ltd.
    Inventors: Gyu Beom Kim, Sang Joon Lee, Chang Suk Han, Kwang Choong Kim
  • Patent number: 8648380
    Abstract: The present invention relates to a light emitting device having a plurality of non-polar light emitting cells and a method of fabricating the same. Nitride semiconductor layers are disposed on a Gallium Nitride substrate having an upper surface. The upper surface is a non-polar or semi-polar crystal and forms an intersection angle with respect to a c-plane. The nitride semiconductor layers may be patterned to form light emitting cells separated from one another. When patterning the light emitting cells, the substrate may be partially removed in separation regions between the light emitting cells to form recess regions. The recess regions are filled with an insulating layer, and the substrate is at least partially removed by using the insulating layer.
    Type: Grant
    Filed: April 18, 2013
    Date of Patent: February 11, 2014
    Assignee: Seoul Opto Device Co., Ltd.
    Inventors: Kwang Choong Kim, Won Cheol Seol, Dae Won Kim, Dae Sung Kal, Kyung Hee Ye
  • Patent number: 8643024
    Abstract: A method for growing reduced defect density planar gallium nitride (GaN) films is disclosed. The method includes the steps of (a) growing at least one silicon nitride (SiNx) nanomask layer over a GaN template, and (b) growing a thickness of a GaN film on top of the SiNx nanomask layer.
    Type: Grant
    Filed: December 20, 2011
    Date of Patent: February 4, 2014
    Assignee: The Regents of the University of California
    Inventors: Arpan Chakraborty, Kwang-Choong Kim, James S. Speck, Steven P. DenBaars, Umesh K. Mishra
  • Patent number: 8588260
    Abstract: Optical gain of a nonpolar or semipolar Group-III nitride diode laser is controlled by orienting an axis of light propagation in relation to an optical polarization direction or crystallographic orientation of the diode laser. The axis of light propagation is substantially perpendicular to the mirror facets of the diode laser, and the optical polarization direction is determined by the crystallographic orientation of the diode laser. To maximize optical gain, the axis of light propagation is oriented substantially perpendicular to the optical polarization direction or crystallographic orientation.
    Type: Grant
    Filed: October 20, 2010
    Date of Patent: November 19, 2013
    Assignee: The Regents of the University of California
    Inventors: Robert M. Farrell, Mathew C. Schmidt, Kwang Choong Kim, Hisashi Masui, Daniel F. Feezell, James S. Speck, Stephen P. DenBaars, Shuji Nakamura
  • Publication number: 20130228793
    Abstract: The present invention relates to a light emitting device having a plurality of non-polar light emitting cells and a method of fabricating the same. Nitride semiconductor layers are disposed on a Gallium Nitride substrate having an upper surface. The upper surface is a non-polar or semi-polar crystal and forms an intersection angle with respect to a c-plane. The nitride semiconductor layers may be patterned to form light emitting cells separated from one another. When patterning the light emitting cells, the substrate may be partially removed in separation regions between the light emitting cells to form recess regions. The recess regions are filled with an insulating layer, and the substrate is at least partially removed by using the insulating layer.
    Type: Application
    Filed: April 18, 2013
    Publication date: September 5, 2013
    Applicant: Seoul Opto Device Co., Ltd.
    Inventors: Kwang Choong KIM, Won Cheol Seo, Dae Won Kim, Dae Sung Kal, Kyung Hee Ye
  • Patent number: 8436389
    Abstract: The present invention relates to a light emitting device having a plurality of non-polar light emitting cells and a method of fabricating the same. Nitride semiconductor layers are disposed on a Gallium Nitride substrate having an upper surface. The upper surface is a non-polar or semi-polar crystal and forms an intersection angle with respect to a c-plane. The nitride semiconductor layers may be patterned to form light emitting cells separated from one another. When patterning the light emitting cells, the substrate may be partially removed in separation regions between the light emitting cells to form recess regions. The recess regions are filled with an insulating layer, and the substrate is at least partially removed by using the insulating layer.
    Type: Grant
    Filed: May 29, 2012
    Date of Patent: May 7, 2013
    Assignee: Seoul Opto Device Co., Ltd.
    Inventors: Kwang Choong Kim, Won Cheol Seo, Dae Won Kim, Dae Sung Kal, Kyung Hee Ye
  • Patent number: 8294171
    Abstract: Disclosed are a light emitting device having a plurality of non-polar light emitting cells and a method of fabricating the same. This method comprises preparing a first substrate of sapphire or silicon carbide having an upper surface with an r-plane, an a-plane or an m-plane. The first substrate has stripe-shaped anti-growth patterns on the upper surface thereof, and recess regions having sidewalls of a c-plane between the anti-growth patterns. Nitride semiconductor layers are grown on the substrate having the recess regions, and the nitride semiconductor layers are patterned to form the light emitting cells separated from one another. Accordingly, there is provided a light emitting device having non-polar light emitting cells with excellent crystal quality.
    Type: Grant
    Filed: January 6, 2012
    Date of Patent: October 23, 2012
    Assignee: Seoul Opto Device Co., Ltd.
    Inventors: Won Cheol Seo, Kwang Choong Kim, Kyung Hee Ye
  • Publication number: 20120256158
    Abstract: A method for fabricating AlxGa1-xN-cladding-free nonpolar III-nitride based laser diodes or light emitting diodes. Due to the absence of polarization fields in the nonpolar crystal planes, these nonpolar devices have thick quantum wells that function as an optical waveguide to effectively confine the optical mode to the active region and eliminate the need for Al-containing waveguide cladding layers.
    Type: Application
    Filed: June 13, 2012
    Publication date: October 11, 2012
    Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
    Inventors: Daniel F. Feezell, Mathew C. Schmidt, Kwang Choong Kim, Robert M. Farrell, Daniel A. Cohen, James S. Speck, Steven P. DenBaars, Shuji Nakamura
  • Publication number: 20120235158
    Abstract: The present invention relates to a light emitting device having a plurality of non-polar light emitting cells and a method of fabricating the same. Nitride semiconductor layers are disposed on a Gallium Nitride substrate having an upper surface. The upper surface is a non-polar or semi-polar crystal and forms an intersection angle with respect to a c-plane. The nitride semiconductor layers may be patterned to form light emitting cells separated from one another. When patterning the light emitting cells, the substrate may be partially removed in separation regions between the light emitting cells to form recess regions. The recess regions are filled with an insulating layer, and the substrate is at least partially removed by using the insulating layer.
    Type: Application
    Filed: May 29, 2012
    Publication date: September 20, 2012
    Applicant: SEOUL OPTO DEVICE CO., LTD.
    Inventors: Kwang Choong KIM, Won Cheol SEO, Dae Won KIM, Dae Sung KAL, Kyung Hee YE
  • Publication number: 20120199809
    Abstract: A method of device growth and p-contact processing that produces improved performance for non-polar III-nitride light emitting diodes and laser diodes. Key components using a low defect density substrate or template, thick quantum wells, a low temperature p-type III-nitride growth technique, and a transparent conducting oxide for the electrodes.
    Type: Application
    Filed: April 5, 2012
    Publication date: August 9, 2012
    Applicants: JAPAN SCIENCE AND TECHNOLOGY AGENCY, THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
    Inventors: Mathew C. Schmidt, Kwang Choong Kim, Hitoshi Sato, Steven P. DenBaars, James S. Speck, Shuji Nakamura
  • Patent number: 8211724
    Abstract: The present invention relates to a light emitting device having a plurality of non-polar light emitting cells and a method of fabricating the same. Nitride semiconductor layers are disposed on a Gallium Nitride substrate having an upper surface. The upper surface is a non-polar or semi-polar crystal and forms an intersection angle with respect to a c-plane. The nitride semiconductor layers may be patterned to form light emitting cells separated from one another. When patterning the light emitting cells, the substrate may be partially removed in separation regions between the light emitting cells to form recess regions. The recess regions are filled with an insulating layer, and the substrate is at least partially removed by using the insulating layer.
    Type: Grant
    Filed: November 23, 2009
    Date of Patent: July 3, 2012
    Assignee: Seoul Opto Device Co., Ltd.
    Inventors: Kwang Choong Kim, Won Cheol Seo, Dae Won Kim, Dae Sung Kal, Kyung Hee Ye
  • Patent number: 8211723
    Abstract: A method for fabricating AlxGa1-xN-cladding-free nonpolar III-nitride based laser diodes or light emitting diodes. Due to the absence of polarization fields in the nonpolar crystal planes, these nonpolar devices have thick quantum wells that function as an optical waveguide to effectively confine the optical mode to the active region and eliminate the need for Al-containing waveguide cladding layers.
    Type: Grant
    Filed: February 12, 2008
    Date of Patent: July 3, 2012
    Assignee: The Regents of the University of California
    Inventors: Daniel F. Feezell, Mathew C. Schmidt, Kwang-Choong Kim, Robert M. Farrell, Daniel A. Cohen, James S. Speck, Steven P. DenBaars, Shuji Nakamura
  • Patent number: 8183072
    Abstract: Disclosed are a light emitting device having a plurality of non-polar light emitting cells and a method of fabricating the same. This method comprises preparing a first substrate of sapphire or silicon carbide having an upper surface with an r-plane, an a-plane or an m-plane. The first substrate has stripe-shaped anti-growth patterns on the upper surface thereof, and recess regions having sidewalls of a c-plane between the anti-growth patterns. Nitride semiconductor layers are grown on the substrate having the recess regions, and the nitride semiconductor layers are patterned to form the light emitting cells separated from one another. Accordingly, there is provided a light emitting device having non-polar light emitting cells with excellent crystal quality.
    Type: Grant
    Filed: November 23, 2009
    Date of Patent: May 22, 2012
    Assignee: Seoul Opto Device Co., Ltd.
    Inventors: Won Cheol Seo, Kwang Choong Kim, Kyung Hee Ye
  • Patent number: 8178373
    Abstract: A method of device growth and p-contact processing that produces improved performance for non-polar III-nitride light emitting diodes and laser diodes. Key components using a low defect density substrate or template, thick quantum wells, a low temperature p-type III-nitride growth technique, and a transparent conducting oxide for the electrodes.
    Type: Grant
    Filed: October 28, 2010
    Date of Patent: May 15, 2012
    Assignees: The Regents of the University of California, Japan Science and Technology Agency
    Inventors: Mathew C. Schmidt, Kwang Choong Kim, Hitsohi Sato, Steven P. DenBaars, James S. Speck, Shuji Nakamura