Patents by Inventor Kwang Deok KIM

Kwang Deok KIM has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11962208
    Abstract: Proposed is an air gap adjustment apparatus. The apparatus is for enabling an air gap between the inner surface of a stator and the outer surface of a rotor, which are installed in an inner space of a housing, to be uniform overall. A plurality of fastening holes are formed so as to surround a shaft through hole of an end plate constituting the housing. A fastener, which has passed through a bearing housing of a bearing, is fastened to each fastening hole so as to mount the bearing to the end plate. An adjusting member body of an adjusting member, which has passed through the bearing housing, is positioned in an adjusting member seating part which is formed at the entrance of each fastening hole. The adjusting member rotates about the adjusting member body so that a head part may adjust the position of the bearing.
    Type: Grant
    Filed: January 28, 2021
    Date of Patent: April 16, 2024
    Assignee: HYOSUNG HEAVY INDUSTRIES CORPORATION
    Inventors: Chul Jun Park, Sang Deok Kim, Seung Ki Kim, Yoon Zong Kim, Kyo Ho Lee, Kwang Jin Kim, Joo Seob Kim, Bit Na Oh
  • Patent number: 10381492
    Abstract: A MOS capacitor may include: an isolation layer formed in a substrate and defining an active region; a first electrode formed in the active region, and including an impurity region spaced from the isolation layer; and a second electrode formed over the substrate overlapping the impurity region, and including a gate having a plurality of gate patterns adjacent to each other with a gap therebetween.
    Type: Grant
    Filed: September 20, 2017
    Date of Patent: August 13, 2019
    Assignee: SK hynix Inc.
    Inventors: Sun-Ha Hwang, Pyong-Su Kwag, Sang-Uk Park, Kwang-Deok Kim, Ho-Ryeong Lee, Ju-Tae Ryu
  • Publication number: 20180277688
    Abstract: A MOS capacitor may include: an isolation layer formed in a substrate and defining an active region; a first electrode formed in the active region, and including an impurity region spaced from the isolation layer; and a second electrode formed over the substrate overlapping the impurity region, and including a gate having a plurality of gate patterns adjacent to each other with a gap therebetween.
    Type: Application
    Filed: September 20, 2017
    Publication date: September 27, 2018
    Inventors: Sun-Ha HWANG, Pyong-Su KWAG, Sang-Uk PARK, Kwang-Deok KIM, Ho-Ryeong LEE, Ju-Tae RYU
  • Patent number: 9145306
    Abstract: A method for preparing metal compound nanoparticles, comprising treating a uniform dispersion of at least one metal precursor in an organic solvent with a supercritical carbon dioxide fluid to attain a homogeneous mixture, which is subjected to a solvothermal reaction under a supercritical CO2 condition, makes it easy to prepare nanoparticles of a metal oxide, a doped metal compound, or a metal complex having various shapes.
    Type: Grant
    Filed: October 13, 2009
    Date of Patent: September 29, 2015
    Assignee: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Sang Woo Kim, Kwang Deok Kim
  • Publication number: 20100178227
    Abstract: A method for preparing metal compound nanoparticles, comprising treating a uniform dispersion of at least one metal precursor in an organic solvent with a supercritical carbon dioxide fluid to attain a homogeneous mixture, which is subjected to a solvothermal reaction under a subcritical CO2 condition, makes it easy to prepare nanoparticles of a metal oxide, a doped metal compound, or a metal complex having various shapes.
    Type: Application
    Filed: October 13, 2009
    Publication date: July 15, 2010
    Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Sang Woo KIM, Kwang Deok KIM