Patents by Inventor Kwang-Dong Yu

Kwang-Dong Yu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Gate-to-drain overlapped MOS transistor fabrication process and structure thereby
    Patent number: 5621236
    Abstract: A method for fabricating a gate-to-drain overlapped MOS transistor in which gate-to-drain capacitance is lower and a structure thereby. A pad oxide layer is formed over a substrate having a first conductive layer with a first pattern formed on a first gate oxide layer, and etchback process is performed until surface part and a predetermined upper parts of the both side walls of the first conductive layer is exposed. As a result, a second conductive layers with a second pattern is formed and a second gate oxide layer thicker than the first gate oxide layer is formed.
    Type: Grant
    Filed: September 3, 1993
    Date of Patent: April 15, 1997
    Assignee: SamSung Electronics Co., Ltd.
    Inventors: Young-Seok Choi, Kwang-Dong Yu, Tae-Young Won
  • Gate-to-drain overlapped MOS transistor fabrication process
    Patent number: 5256586
    Abstract: A method for fabricating a gate-to-drain overlapped MOS transistor in which gate-to-drain capacitance is lower and a structure thereby. A pad oxide layer is formed over a substrate having a first conductive layer with a first pattern formed on a first gate oxide layer, and etchback process is performed until surface part and a predetermined upper parts of the both side walls of the first conductive layer is exposed. As a result, a second conductive layers with a second pattern is formed and a second gate oxide layer thicker than the first gate oxide layer is formed.
    Type: Grant
    Filed: July 5, 1991
    Date of Patent: October 26, 1993
    Assignee: SamSung Electronics Co., Ltd.
    Inventors: Young-Seok Choi, Kwang-Dong Yu, Tae-Young Won