Patents by Inventor Kwang-ho Cha

Kwang-ho Cha has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20070114435
    Abstract: A filament member configured to discharge thermions may be employed in an ion source of an ion implantation apparatus. A filament member may include an anode disposed around a central portion of the filament member, a cathode disposed around a periphery of the filament and/or enclosing the anode, and at least one conductive path disposed between the anode and the cathode to discharge the thermions.
    Type: Application
    Filed: October 10, 2006
    Publication date: May 24, 2007
    Inventors: Ui-Hui Kwon, Tai-Kyung Kim, Gyeong-Su Keum, Won-Young Chung, Kwang-Ho Cha
  • Patent number: 7170070
    Abstract: The present invention can provide ion implanter devices including an arc chamber including at least a first inner region and a second inner region, an electron emitting device disposed in the arc chamber adjacent the first inner region and adapted to emit electrons, an electron returning device disposed in the arc chamber adjacent the second inner region and adapted to return at least some of the electrons emitted from the electron emitting device into the second inner region; and an electric field and magnetic field generating device adapted to provide a magnetic field to the arc chamber, wherein at least one inner wall of the arc chamber has a convex surface.
    Type: Grant
    Filed: September 15, 2005
    Date of Patent: January 30, 2007
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Ui-hui Kwon, Gyeong-su Keum, Won-young Chung, Kwang-ho Cha, Young-tae Kim, Seung-ki Chae, Jai-hyung Won, Young-kwan Park, Tai-kyung Kim
  • Publication number: 20060060797
    Abstract: The present invention can provide ion implanter devices including an arc chamber including at least a first inner region and a second inner region, an electron emitting device disposed in the arc chamber adjacent the first inner region and adapted to emit electrons, an electron returning device disposed in the arc chamber adjacent the second inner region and adapted to return at least some of the electrons emitted from the electron emitting device into the second inner region; and an electric field and magnetic field generating device adapted to provide a magnetic field to the arc chamber, wherein at least one inner wall of the arc chamber has a convex surface.
    Type: Application
    Filed: September 15, 2005
    Publication date: March 23, 2006
    Inventors: Ui-hui Kwon, Gyeong-su Keum, Won-young Chung, Kwang-ho Cha, Young-tae Kim, Seung-ki Chae, Jai-hyung Won, Young-kwan Park, Tai-kyung Kim
  • Publication number: 20060022144
    Abstract: An ion source section of ion implantation equipment for ionizing reaction gas in an ion implantation process of semiconductor manufacturing processes is disclosed. The ion source section includes a source aperture member separable from an arc chamber and having an ion-discharging hole through which the ion beam discharges. The source aperture member consists of a first plate, a second plate adjacent to the first plate and facing the arc chamber, and a third plate to protect the exposed second plate from the ionized reaction gas.
    Type: Application
    Filed: August 1, 2005
    Publication date: February 2, 2006
    Inventor: Kwang-Ho Cha
  • Patent number: 6717165
    Abstract: A technique is disclosed for detecting a turbo pump drive state in a tendetron accelerator that accelerates an ion beam to implant ions onto a semiconductor wafer. In particular the method of detecting a turbo pump driving state in the accelerator includes the steps of detecting a current applied to the turbo pump in the accelerator; converting the detected current to an optical signal to transmit it through an optical fiber; converting the optical signal transmitted through the optical fiber to an electric signal; displaying the current value of the converted electric signal; comparing the current value of the converted electric signal with a setting current value to generate an interlocking signal when the current value is out of a given range of the setting current value; and cutting off a power supply of the tendetron accelerator in accordance with the interlocking signal.
    Type: Grant
    Filed: September 27, 2001
    Date of Patent: April 6, 2004
    Assignee: Samsung Electronics Co., Ltd.
    Inventor: Kwang-Ho Cha
  • Publication number: 20020050577
    Abstract: A technique is disclosed for detecting a turbo pump drive state in a tendetron accelerator that accelerates an ion beam to implant ions onto a semiconductor wafer. In particular the method of detecting a turbo pump driving state in the accelerator includes the steps of detecting a current applied to the turbo pump in the accelerator; converting the detected current to an optical signal to transmit it through an optical fiber; converting the optical signal transmitted through the optical fiber to an electric signal; displaying the current value of the converted electric signal; comparing the current value of the converted electric signal with a setting current value to generate an interlocking signal when the current value is out of a given range of the setting current value; and cutting off a power supply of the tendetron accelerator in accordance with the interlocking signal.
    Type: Application
    Filed: September 27, 2001
    Publication date: May 2, 2002
    Inventor: Kwang-Ho Cha