Abstract: Provided are a heterogeneous substrate, a nitride-based semiconductor device using the same, and a manufacturing method thereof to form a high-quality non-polar or semi-polar nitride layer on a non-polar or semi-polar plane of the heterogeneous substrate by adjusting a crystal growth mode. A base substrate having one of a non-polar plane and a semi-polar plane is prepared, and a nitride-based nucleation layer is formed on the plane of the base substrate. A first buffer layer is grown faster in the vertical direction than in the lateral direction on the nucleation layer. A lateral growth layer is grown faster in the lateral direction than in the vertical direction on the first buffer layer. A second buffer layer is formed on the lateral growth layer. A silicon nitride layer having a plurality of holes may be formed between the lateral growth layer on the first buffer layer and the second buffer layer.

Abstract: A method of fabricating a semiconductor integrated circuit device, including providing a semiconductor substrate, sequentially forming an etching target layer and a hard mask layer on the semiconductor substrate, forming first etch masks on the hard mask layer, the first etch masks including a plurality of first line patterns spaced apart from one another at a first pitch and extending in a first direction, forming first hard mask patterns by etching the hard mask layer using the first etch masks, forming second etch masks on the first hard mask patterns, the second etch masks including a plurality of second line patterns spaced apart from one another at a second pitch and extending in a second direction different from the first direction, forming second hard mask patterns by etching the first hard mask patterns using the second etch masks, forming spacers on sidewalls of the second hard mask patterns, and patterning the etching target layer using the second hard mask patterns having the spacers.

Abstract: Provided are a heterogeneous substrate, a nitride-based semiconductor device using the same, and a manufacturing method thereof to form a high-quality non-polar or semi-polar nitride layer on a non-polar or semi-polar plane of the heterogeneous substrate by adjusting a crystal growth mode. A base substrate having one of a non-polar plane and a semi-polar plane is prepared, and a nitride-based nucleation layer is formed on the plane of the base substrate. A first buffer layer is grown faster in the vertical direction than in the lateral direction on the nucleation layer. A lateral growth layer is grown faster in the lateral direction than in the vertical direction on the first buffer layer. A second buffer layer is formed on the lateral growth layer. A silicon nitride layer having a plurality of holes may be formed between the lateral growth layer on the first buffer layer and the second buffer layer.

Abstract: A semiconductor light emitting device having a multiple pattern structure greatly increases light extraction efficiency. The semiconductor light emitting device includes a substrate and a semiconductor layer, an active layer, and an electrode layer formed on the substrate, a first pattern defining a first corrugated structure between the substrate and the semiconductor layer, and a second pattern defining a second corrugated structure on the first corrugated structure of the first pattern.

Abstract: Provided is a method of manufacturing a nitride-based semiconductor light-emitting device having increased efficiency and increased output properties. The method may include forming a sacrificial layer having a wet etching property on a substrate, forming a protective layer on the sacrificial layer, protecting the sacrificial layer in a reaction gas atmosphere for crystal growth, and facilitating epitaxial growth of a semiconductor layer to be formed on the protective layer, forming a semiconductor device including an n-type semiconductor layer, an active layer, and a p-type semiconductor layer on the protective layer, and removing the substrate from the semiconductor device by wet etching the sacrificial layer.

Abstract: A method of fabricating a semiconductor integrated circuit device, including providing a semiconductor substrate, sequentially forming an etching target layer and a hard mask layer on the semiconductor substrate, forming first etch masks on the hard mask layer, the first etch masks including a plurality of first line patterns spaced apart from one another at a first pitch and extending in a first direction, forming first hard mask patterns by etching the hard mask layer using the first etch masks, forming second etch masks on the first hard mask patterns, the second etch masks including a plurality of second line patterns spaced apart from one another at a second pitch and extending in a second direction different from the first direction, forming second hard mask patterns by etching the first hard mask patterns using the second etch masks, forming spacers on sidewalls of the second hard mask patterns, and patterning the etching target layer using the second hard mask patterns having the spacers.

Abstract: Provided are a complementary metal oxide semiconductor (CMOS) device and a method of manufacturing the same. The CMOS device comprises an epi-layer that may be formed on a substrate; a first semiconductor layer and a second semiconductor layer that may be formed on different regions of the epi-layer, respectively; and a PMOS transistor and a NMOS transistor that may be formed on the first and second semiconductor layers, respectively.

Abstract: Provided is a method of manufacturing a nitride-based semiconductor light-emitting device having increased efficiency and increased output properties. The method may include forming a sacrificial layer having a wet etching property on a substrate, forming a protective layer on the sacrificial layer, protecting the sacrificial layer in a reaction gas atmosphere for crystal growth, and facilitating epitaxial growth of a semiconductor layer to be formed on the protective layer, forming a semiconductor device including an n-type semiconductor layer, an active layer, and a p-type semiconductor layer on the protective layer, and removing the substrate from the semiconductor device by wet etching the sacrificial layer.

Abstract: A semiconductor light emitting device having a multiple pattern structure greatly increases light extraction efficiency. The semiconductor light emitting device includes a substrate and a semiconductor layer, an active layer, and an electrode layer formed on the substrate, a first pattern defining a first corrugated structure between the substrate and the semiconductor layer, and a second pattern defining a second corrugated structure on the first corrugated structure of the first pattern.