Abstract: A method for manufacturing carbon/silicon-carbide composite by a ‘One-shot’ process including carbonization, heat processing, infiltration, and forming an anti-oxidation layer on surface is provided through the steps of: 1) hardening a stacked carbon/phenolic preform; 2) carbonization and heat processing the preform until the temperature reaches at 2300° C.; 3) infiltrating and sintering the liquid metal silicon within the temperature of 1400˜1800° C.; and 4) inducting a compound including SiO2to gas phase and heat processing it while forming an anti-oxidation layer on the surface within temperature range of 2000° C.˜2700° C. (desirably, in the range of higher than 2300° C., and more desirably, at the temperature near 2500° C.). Herein, the carbonization, heat processing, and ultra-high heat processing might be performed at the same time in the step 2) and the step 4) might not be performed.

Abstract: A method for manufacturing carbon/silicon-carbide composite by a ‘One-shot’ process including carbonization, heat processing, infiltration, and forming an anti-oxidation layer on surface is provided through the steps of: 1) hardening a stacked carbon/phenolic preform; 2) carbonization and heat processing the preform until the temperature reaches at 2300° C.; 3) infiltrating and sintering the liquid metal silicon within the temperature of 1400˜1800° C.; and 4) inducting a compound including SiO2to gas phase and heat processing it while forming an anti-oxidation layer on the surface within temperature range of 2000° C.˜2700° C. (desirably, in the range of higher than 2300° C., and more desirably, at the temperature near 2500° C.). Herein, the carbonization, heat processing, and ultra-high heat processing might be performed at the same time in the step 2) and the step 4) might not be performed.