Abstract: Disclosed is an adjuvant for use in simultaneous polishing of a cationically charged material and an anionically charged material, wherein the adjuvant comprises a polyelectrolyte salt containing: (a) a mixture of a linear polyelectrolyte having a weight average molecular weight of 2,000˜50,000 with a graft type polyelectrolyte that has a weight average molecular weight of 1,000˜20,000 and comprises a backbone and a side chain; and (b) a basic material. CMP (chemical mechanical polishing) slurry comprising the above adjuvant and abrasive particles is also disclosed. The adjuvant comprising a mixture of a linear polyelectrolyte with a graft type polyelectrolyte makes it possible to increase polishing selectivity as compared to CMP slurry using the linear polyelectrolyte alone, and to obtain a desired range of polishing selectivity by controlling the ratio of the linear polyelectrolyte to the graft type polyelectrolyte.

Abstract: Disclosed is an adjuvant for use in simultaneous polishing of a cationically charged material and an anionically charged material, wherein the adjuvant comprises a polyelectrolyte salt containing: (a) a mixture of a linear polyelectrolyte having a weight average molecular weight of 2,000˜50,000 with a graft type polyelectrolyte that has a weight average molecular weight of 1,000˜20,000 and comprises a backbone and a side chain; and (b) a basic material. CMP (chemical mechanical polishing) slurry comprising the above adjuvant and abrasive particles is also disclosed. The adjuvant comprising a mixture of a linear polyelectrolyte with a graft type polyelectrolyte makes it possible to increase polishing selectivity as compared to CMP slurry using the linear polyelectrolyte alone, and to obtain a desired range of polishing selectivity by controlling the ratio of the linear polyelectrolyte to the graft type polyelectrolyte.

Abstract: Disclosed is an adjuvant for use in simultaneous polishing of a cationically charged material and an anionically charged material, which forms an adsorption layer on the cationically charged material in order to increase polishing selectivity of the anionically charged material, wherein the adjuvant comprises a polyelectrolyte salt containing: (a) a mixture of a linear polyelectrolyte having a weight average molecular weight of 2,000˜50,000 with a graft type polyelectrolyte that has a weight average molecular weight of 1,000˜20,000 and comprises a backbone and a side chain; and (b) a basic material. CMP (chemical mechanical polishing) slurry comprising the above adjuvant and abrasive particles is also disclosed.

Abstract: Disclosed is an adjuvant for controlling polishing selectivity when polishing a cationically charged material simultaneously with an anionically charged material. CMP slurry comprising the adjuvant is also disclosed. The adjuvant comprises: (a) a polyelectrolyte that forms an adsorption layer on the cationically charged material in order to increase the polishing selectivity of the anionically charged material; (b) a basic material; and (c) a fluorine-based compound. when the adjuvant for controlling polishing selectivity of CMP slurry according to the present invention is applied to a CMP process, it is possible to increase the polishing selectivity of a silicon oxide layer, to obtain a uniform particle size of CMP slurry, to stabilize variations in viscosity under an external force and to minimize generation of microscratches during a polishing process.

Abstract: Disclosed is an adjuvant for controlling polishing selectivity when polishing a cationically charged material simultaneously with an anionically charged material. CMP slurry comprising the adjuvant is also disclosed. The adjuvant comprises: (a) a polyelectrolyte that forms an adsorption layer on the cationically charged material in order to increase the polishing selectivity of the anionically charged material; (b) a basic material; and (c) a fluorine-based compound. when the adjuvant for controlling polishing selectivity of CMP slurry according to the present invention is applied to a CMP process, it is possible to increase the polishing selectivity of a silicon oxide layer, to obtain a uniform particle size of CMP slurry, to stabilize variations in viscosity under an external force and to minimize generation of microscratches during a polishing process.

Abstract: A neopentyl glycol having a purity of 98% or more is produced continuously by a process comprising the steps of: conducting an aldol condensation of isobutyraldehyde with an aqueous formaldehyde solution containing methanol in an amount of 0.1 to 15 wt % in the presence of a tertiary alkylamine catalyst; extracting the condensation product mixture with octanol; distilling the extract; hydrogenating the distillation product; extracting the hydrogenation product mixture with water; and subjecting the extract to distillation.