Abstract: The present disclosure provides a novel compound represented by the following Chemical Formula 1 and an organic light emitting device including the same: wherein R1 to R8 are described herein.

Abstract: The present disclosure provides a novel compound represented by the following Chemical Formula 1, and an organic light emitting device including the same: wherein A1 to A4, X, Y, and n are described herein.

Abstract: An inductor-integrated transformer as an embodiment of the present invention includes a transformer core including an upper core and a lower core; a transformer coil including a primary coil and a secondary coil; an inductor core including an upper core and a lower core; and an inductor coil, wherein the primary coil includes a plurality of input terminals spaced a first distance apart from a first surface of the transformer core; and a plurality of input terminals spaced a second distance apart from a second surface, and the output terminal is electrically connected to the secondary coil and the inductor coil, and the first distance is greater than the second distance.

Abstract: In one example, an electronic device includes an embedded module, which includes a module substrate and module components coupled to the module substrate. A device substrate is coupled to the first module substrate. Device terminals are coupled to the module components and a device encapsulant structure encapsulates the embedded module, the device substrate, and the device terminals. A portion of the device substrate is exposed from the device encapsulant structure and portions of the device terminals are exposed from the device encapsulant structure. Other examples and related methods are also disclosed herein.

Abstract: Disclosed is an amplification circuit, which includes a first amplifier that receives an external signal and performs first band pass filtering on the external signal to output a first filter signal, and a second amplifier that receives the first filter signal and performs second band pass filtering on the first filter signal to output a second filter signal, and a frequency pass bandwidth of the second band pass filtering is narrower than a frequency pass bandwidth of the first band pass filtering.

Abstract: A hybrid communication device, an operation method thereof, and a communication system including the same are provided. The hybrid communication device includes a contact unit that includes an antenna for receiving a first communication signal and an electrode for receiving a second signal, a switch controller that includes a first switch and a second switch and controls the first switch and the second switch based on a change in capacitance of the electrode, and a signal processing unit that receives at least one of the first communication signal and the second communication signal from the contact unit via the first switch and processes the received signal. The first switch is connected to the contact unit, and the signal processing unit is connected to the first switch.

Abstract: A technical object to be solved according to the present disclosure is to provide a secondary battery which has reduced electrical resistance by directly connecting an electrode assembly to a can and/or a terminal without lead tabs and also has an increased battery capacity by removing lead tabs. To this end, the present disclosure provides a secondary battery comprising: a can; an electrode assembly accommodated in the can and including a first uncoated portion extending in a first direction and a second uncoated portion extending in a second direction opposite to the first direction; a first current collector plate electrically connected to the first uncoated portion of the electrode assembly; a first terminal portion coupled to the can and electrically connected to the first current collector plate; and a second terminal portion coupled to the can and electrically connected to the second uncoated portion of the electrode assembly.

Abstract: Disclosed are a lamp for a vehicle and a vehicle including the lamp. One aspect of the present disclosure provides a lamp for a vehicle, the lamp including: a lens part configured as a single body capable of transmitting light and having a focal point; first and second light source parts configured to generate first light and second light that are to enter the lens part; an optic part provided in front of the second light source part; and a shield part configured to block a part of the first light or a part of the second light, in which the first light emitted from the first light source part and the second light emitted from the second light source part reach the single body of the lens part so as to form a beam pattern outside the vehicle.

Abstract: Provided is a secondary battery. The secondary battery includes a can, an electrode assembly in the can, a collector plate electrically connected to the electrode assembly, and a terminal having a coupling part mechanically coupled to the collector plate by a pressure, electrically connected to the collector plate, and electrically connected to the electrode assembly.

Abstract: A secondary battery according to one or more embodiments of the present disclosure includes a case for accommodating an electrode assembly in an internal accommodating space, a cap plate, a first terminal inserted into the cap plate in a first direction, and bent at an inner surface of the cap plate to be coupled to the cap plate, and a collector plate in the case, electrically connected to a first electrode of the electrode assembly, and coupled to the first terminal in the first direction.

Abstract: A secondary battery includes: an electrode assembly including a first electrode plate, a second electrode plate, and a separator; a case including a first side having an opening to accommodate the electrode assembly; a cap plate sealing the first side of the case; a first current collector plate arranged between the electrode assembly and the cap plate and electrically connecting the first electrode plate and the cap plate; a terminal arranged on a second side of the case; a second current collector plate electrically connecting the second electrode plate and the terminal; a first welding portion on an outer surface of the cap plate and welding the cap plate and the first current collector plate; and a second welding portion on the outer surface of the cap plate and welding the case and the cap plate.

Abstract: Disclosed are a lamp for a vehicle and a vehicle including the lamp. One aspect of the present disclosure provides a lamp for a vehicle, the lamp including: a lens part configured as a single body capable of transmitting light and having a focal point; first and second light source parts configured to generate first light and second light that are to enter the lens part; an optic part provided in front of the second light source part; and a shield part configured to block a part of the first light or a part of the second light, in which the first light emitted from the first light source part and the second light emitted from the second light source part reach the single body of the lens part so as to form a beam pattern outside the vehicle.

Abstract: The present disclosure relates to a semiconductor chip having a level shifter with electro-static discharge (ESD) protection circuit and device applied to multiple power supply lines with high and low power input to protect the level shifter from the static ESD stress. More particularly, the present disclosure relates to a feature to protect a semiconductor device in a level shifter from the ESD stress by using ESD stress blocking region adjacent to a gate electrode of the semiconductor device. The ESD stress blocking region increases a gate resistance of the semiconductor device, which results in reducing the ESD stress applied to the semiconductor device.

Abstract: The present disclosure relates to a semiconductor chip having a level shifter with electro-static discharge (ESD) protection circuit and device applied to multiple power supply lines with high and low power input to protect the level shifter from the static ESD stress. More particularly, the present disclosure relates to a feature to protect a semiconductor device in a level shifter from the ESD stress by using ESD stress blocking region adjacent to a gate electrode of the semiconductor device. The ESD stress blocking region increases a gate resistance of the semiconductor device, which results in reducing the ESD stress applied to the semiconductor device.

Abstract: The present disclosure relates to a semiconductor chip having a level shifter with electro-static discharge (ESD) protection circuit and device applied to multiple power supply lines with high and low power input to protect the level shifter from the static ESD stress. More particularly, the present disclosure relates to a feature to protect a semiconductor device in a level shifter from the ESD stress by using ESD stress blocking region adjacent to a gate electrode of the semiconductor device. The ESD stress blocking region increases a gate resistance of the semiconductor device, which results in reducing the ESD stress applied to the semiconductor device.

Abstract: The present disclosure relates to a semiconductor chip having a level shifter with electro-static discharge (ESD) protection circuit and device applied to multiple power supply lines with high and low power input to protect the level shifter from the static ESD stress. More particularly, the present disclosure relates to a feature to protect a semiconductor device in a level shifter from the ESD stress by using ESD stress blocking region adjacent to a gate electrode of the semiconductor device. The ESD stress blocking region increases a gate resistance of the semiconductor device, which results in reducing the ESD stress applied to the semiconductor device.

Abstract: The present disclosure relates to a semiconductor chip having a level shifter with electro-static discharge (ESD) protection circuit and device applied to multiple power supply lines with high and low power input to protect the level shifter from the static ESD stress. More particularly, the present disclosure relates to a feature to protect a semiconductor device in a level shifter from the ESD stress by using ESD stress blocking region adjacent to a gate electrode of the semiconductor device. The ESD stress blocking region increases a gate resistance of the semiconductor device, which results in reducing the ESD stress applied to the semiconductor device.

Abstract: The present examples relate to a semiconductor chip having a level shifter with an electrostatic discharge (ESD) protection circuit and a device applying to multiple power supply lines with high and low power inputs to protect the level shifter from the static ESD stress. More particularly, the present examples relate to using a feature to protect a semiconductor device in a level shifter from the ESD stress by using ESD stress blocking region adjacent to a gate electrode of the semiconductor device. The ESD stress blocking region increases a gate resistance of the semiconductor device, which results in reducing the ESD stress applied to the semiconductor device itself.

Abstract: Provided is niacin-peptide which has skin whitening activity. The peptide of the present invention has skin whitening activity by inhibiting melanogenesis, that is, by inhibiting the expression of a gene related to melanogenesis (for example, TRP-1, TRP2, or MIFT). The peptide of the present invention has high stability and skin permeability. Also provided is a cosmetic composition for skin whitening which contains the niacin-peptide.

Abstract: The present examples relate to a semiconductor chip having a level shifter with an electrostatic discharge (ESD) protection circuit and a device applying to multiple power supply lines with high and low power inputs to protect the level shifter from the static ESD stress. More particularly, the present examples relate to using a feature to protect a semiconductor device in a level shifter from the ESD stress by using ESD stress blocking region adjacent to a gate electrode of the semiconductor device. The ESD stress blocking region increases a gate resistance of the semiconductor device, which results in reducing the ESD stress applied to the semiconductor device itself.