Abstract: Provided are casting products for cooling heating elements, the casting products including: a body made of a metal material; and a cooling pipe providing a path through which a cooling fluid flows, and being made of an aluminum alloy material, wherein the body includes a plate-shaped plate portion, protrusion extensions protruding from the plate portion and extending along the cooling pipe so that at least part of the cooling pipe is fully buried, and a cooling pin structure formed integrally with the plate portion, and the cooling pipe is formed in such a way that a first pipe thickness of the cooling pipe having a cross-sectional shape in a first direction is greater than a second pipe thickness in a second direction perpendicular to the first direction, and the first direction is in parallel to the plate portion, and the second direction is a thickness direction of the plate portion.

Abstract: There is provided a heat transfer member which is made of an aluminum alloy including silicon (Si), iron (Fe), and magnesium (Mg). The aluminum alloy further includes at least one or two or more of copper (Cu), manganese (Mn), zinc (Zn), titanium (Ti), calcium (Ca), tin (Sn), phosphorus (P), chromium (Cr), zirconium (Zr), nickel (Ni), strontium (Sr), and vanadium (V).

Abstract: A semiconductor memory device includes a switch circuit that inverts input data or output data when burn-in mode enable signals are activated or a control signal switch that inverts external control signals or internal control signals when burn-in mode enable signals are activated. A burn-in test method for the semiconductor memory device performs a pass/fail decision to determine whether the output data has passed or failed based on an inverted logical value of the input data.

Abstract: A semiconductor memory device includes a switch circuit that inverts input data or output data when burn-in mode enable signals are activated or a control signal switch that inverts external control signals or internal control signals when burn-in mode enable signals are activated. A burn-in test method for the semiconductor memory device performs a pass/fail decision to determine whether the output data has passed or failed based on an inverted logical value of the input data.