Abstract: An automated gas supply system includes a gas cylinder transfer unit configured to transfer a cradle in which one or more gas cylinders storing a gas therein are stored; a gas cylinder inspection unit configured to check properties of the gas stored in the gas cylinder transferred from the gas cylinder transfer unit and check whether the gas leaks from the gas cylinder; a storage queue configured to receive the gas cylinder from the gas cylinder inspection unit by a mobile robot and configured to classify and store the transferred gas cylinders according to the properties of the gas stored in the gas cylinder; and a gas cabinet configured to receive the gas cylinder from the storage queue by the mobile robot and fasten a gas pipe, which is connected to a semiconductor manufacturing process line, to a gas spray nozzle, which is disposed at one side of the received gas cylinder, to supply the gas stored in the gas cylinder to the semiconductor manufacturing process line, wherein the gas cabinet includes a resid

Abstract: An embodiment of the present invention provides a method for preparing a solid lithium salt from a lithium solution including the steps of, preparing a mixture in which a phosphorus-containing material is added to a lithium solution in step 1; adding a basic solution to the prepared mixture to adjust the pH in step 2; making the pH-adjusted mixture react by raising its temperature and filtering to recover lithium phosphate in step 3; preparing an acid lithium solution in which distilled water and acid are added to the recovered lithium phosphate, in step 4; and recovering a solid lithium salt by evaporative concentration of the acid lithium solution, in step 5.

Abstract: The present invention relates to a method for increasing the efficiency of read data analysis by removing primer sequence information present in a read obtained through next-generation sequencing (NGS) and, more specifically, to a method for matching information of a read and a designed primer to various reference values in several steps so as to determine primer sequence information within a read, and then precisely removing only a primer sequence so as to increase the efficiency of read data analysis. The method for increasing the efficiency of read data analysis in a primer removal-based NGS, according to the present invention, has a rapid data analysis speed and can precisely remove only a primer sequence, thereby being useful for increasing the efficiency and accuracy of read data analysis.

Abstract: The present invention relates to a method for detecting a gene rearrangement on the basis of next generation sequencing (NGS) and, more specifically, to a method for arranging and extracting read data generated by NGS, analyzing the sequence similarity of the extracted read data so as to detect a gene rearrangement present in a cancer sample and, further, detecting the direction of the gene rearrangement, micro-homology sequences and external insertion sequences and positions. According to the method for detecting a gene rearrangement by using NGS, a gene rearrangement can be detected and the direction of the gene rearrangement, micro-homology sequences, external insertion sequences and the position of gene rearrangement can be accurately differentiated into units of base pairs through the reads obtained from the NGS.

Abstract: An embodiment of the present invention provides a method for producing lithium phosphate from a lithium solution, comprising the steps of, preparing a mixture in which a phosphorus-containing material is added to a lithium solution in step 1; adding a basic solution to the prepared mixture to adjust the pH to 10 to 12 in step 2; and making the pH-adjusted mixture react by raising its temperature and filtering to recover lithium phosphate in step 3.

Abstract: Exemplary embodiments of the present invention disclose a light emitting diode including an n-type contact layer doped with silicon, a p-type contact layer, an active region disposed between the n-type contact layer and the p-type contact layer, a superlattice layer disposed between the n-type contact layer and the active region, the superlattice layer including a plurality of layers, an undoped intermediate layer disposed between the superlattice layer and the n-type contact layer, and an electron reinforcing layer disposed between the undoped intermediate layer and the superlattice layer. Only a final layer of the superlattice layer closest to the active region is doped with silicon, and the silicon doping concentration of the final layer is higher than that of the n-type contact layer.

Abstract: The disclosure describes a method of separating and recovering valuable metals from remanufacturing solution of a spent desulfurization catalyst containing vanadium, and more particularly, to a method of separating and recovering a valuable metal from remanufacturing solution of a spent desulfurization catalyst containing vanadium, which includes: adding organic acid to a spent hydrodesulfurization catalyst after collecting the spent hydrodesulfurization catalyst in order to prepare the remanufacturing solution of the spent hydrodesulfurization catalyst; adding an extracting agent and a diluent to the remanufacturing solution to extract molybdenum and extracting vanadium from an extracted filtrate to obtain an organic phase; and adding a stripping agent to the organic phase to strip and recover vanadium.

Abstract: In one example embodiment, a server may divide documents into a plurality of morphological segments, parse, from the plurality of morphological segments, a plurality of named biological entities, tag the plurality of named biological entities and the plurality of morphological segments, generate a database that includes the tagged named biological entities and the tagged morphological segments, receive a first search term including one or more of the tagged named biological entities or one or more of the tagged morphological segments, search the database for at least one result phrase that includes at least one occurrence of the first search term, receive an input to retrieve a second search term including at least one morphological segment from one of the result phrases, store the second search term as a mining search term, and mine for the one or more documents based on the mining search term.

Abstract: An embodiment of the present invention provides a method for preparing a solid lithium salt from a lithium solution including the steps of, preparing a mixture in which a phosphorus-containing material is added to a lithium solution in step 1; adding a basic solution to the prepared mixture to adjust the pH in step 2; making the pH-adjusted mixture react by raising its temperature and filtering to recover lithium phosphate in step 3; preparing an acid lithium solution in which distilled water and acid are added to the recovered lithium phosphate, in step 4; and recovering a solid lithium salt by evaporative concentration of the acid lithium solution, in step 5.

Abstract: An embodiment of the present invention provides a method for producing lithium phosphate from a lithium solution, comprising the steps of, preparing a mixture in which a phosphorus-containing material is added to a lithium solution in step 1; adding a basic solution to the prepared mixture to adjust the pH to 10 to 12 in step 2; and making the pH-adjusted mixture react by raising its temperature and filtering to recover lithium phosphate in step 3.

Abstract: Exemplary embodiments of the present invention disclose a light emitting diode including an n-type contact layer doped with silicon, a p-type contact layer, an active region disposed between the n-type contact layer and the p-type contact layer, a superlattice layer disposed between the n-type contact layer and the active region, the superlattice layer including a plurality of layers, an undoped intermediate layer disposed between the superlattice layer and the n-type contact layer, and an electron reinforcing layer disposed between the undoped intermediate layer and the superlattice layer. Only a final layer of the superlattice layer closest to the active region is doped with silicon, and the silicon doping concentration of the final layer is higher than that of the n-type contact layer.

Abstract: Exemplary embodiments of the present invention disclose a light emitting diode including an n-type contact layer doped with silicon, a p-type contact layer, an active region disposed between the n-type contact layer and the p-type contact layer, a superlattice layer disposed between the n-type contact layer and the active region, the superlattice layer including a plurality of layers, an undoped intermediate layer disposed between the superlattice layer and the n-type contact layer, and an electron reinforcing layer disposed between the undoped intermediate layer and the superlattice layer. Only a final layer of the super lattice layer closest to the active region is doped with silicon, and the silicon doping concentration of the final layer is higher than that of the n-type contact layer.

Abstract: The disclosure describes a method of separating and recovering valuable metals from remanufacturing solution of a spent desulfurization catalyst containing vanadium, and more particularly, to a method of separating and recovering a valuable metal from remanufacturing solution of a spent desulfurization catalyst containing vanadium, which includes: adding organic acid to a spent hydrodesulfurization catalyst after collecting the spent hydrodesulfurization catalyst in order to prepare the remanufacturing solution of the spent hydrodesulfurization catalyst; adding an extracting agent and a diluent to the remanufacturing solution to extract molybdenum and extracting vanadium from an extracted filtrate to obtain an organic phase; and adding a stripping agent to the organic phase to strip and recover vanadium.

Abstract: Exemplary embodiments of the present invention disclose a light emitting diode including an n-type contact layer doped with silicon, a p-type contact layer, an active region disposed between the n-type contact layer and the p-type contact layer, a superlattice layer disposed between the n-type contact layer and the active region, the superlattice layer including a plurality of layers, an undoped intermediate layer disposed between the superlattice layer and the n-type contact layer, and an electron reinforcing layer disposed between the undoped intermediate layer and the superlattice layer. Only a final layer of the superlattice layer closest to the active region is doped with silicon, and the silicon doping concentration of the final layer is higher than that of the n-type contact layer.

Abstract: Exemplary embodiments of the present invention disclose a light emitting diode including an n-type contact layer doped with silicon, a p-type contact layer, an active region disposed between the n-type contact layer and the p-type contact layer, a superlattice layer disposed between the n-type contact layer and the active region, the superlattice layer including a plurality of layers, an undoped intermediate layer disposed between the superlattice layer and the n-type contact layer, and an electron reinforcing layer disposed between the undoped intermediate layer and the superlattice layer. Only a final layer of the super lattice layer closest to the active region is doped with silicon, and the silicon doping concentration of the final layer is higher than that of the n-type contact layer.

Abstract: In one example embodiment, a server may divide documents into a plurality of morphological segments, parse, from the plurality of morphological segments, a plurality of named biological entities, tag the plurality of named biological entities and the plurality of morphological segments, generate a database that includes the tagged named biological entities and the tagged morphological segments, receive a first search term including one or more of the tagged named biological entities or one or more of the tagged morphological segments, search the database for at least one result phrase that includes at least one occurrence of the first search term, receive an input to retrieve a second search term including at least one morphological segment from one of the result phrases, store the second search term as a mining search term, and mine for the one or more documents based on the mining search term.

Abstract: In one example embodiment, a genome ontology device may determine one or more super-concepts to be included in an ontology, generate a first genome database, from a genome, that includes at least one first title, at least one first field name and at least one first field value, select, from among the one or more super-concepts, one or more super-concepts that correspond to the first genome database, search web-based sources using at least one first key word associated with the one or more super-concepts and the first database, retrieve, from results of the search, a plurality of sub-concepts subsumed by the one or more super-concepts and one or more respective relationships between the one or more super-concepts and the plurality of sub-concepts, and generate the ontology based on the super-concepts, the retrieved sub-concepts, and the retrieved relationships.

Abstract: Exemplary embodiments of the present invention relate to a method of fabricating a light emitting diode (LED). According to an exemplary embodiment of the present invention, the method includes growing a first GaN-based semiconductor layer on a substrate at a first temperature by supplying a chamber with a nitride source gas and a first metal source gas, stopping the supply of the first metal source gas and maintaining the first temperature for a first time period after stopping the supply of the first metal source gas, decreasing the temperature of the substrate to the a second temperature after the first time period elapses, growing an active layer of the first GaN-based semiconductor layer at the second temperature by supplying the chamber with a second metal source gas.

Abstract: Exemplary embodiments of the present invention disclose a light emitting diode including an n-type contact layer doped with silicon, a p-type contact layer, an active region disposed between the n-type contact layer and the p-type contact layer, a superlattice layer disposed between the n-type contact layer and the active region, the superlattice layer including a plurality of layers, an undoped intermediate layer disposed between the superlattice layer and the n-type contact layer, and an electron reinforcing layer disposed between the undoped intermediate layer and the superlattice layer. Only a final layer of the superlattice layer closest to the active region is doped with silicon, and the silicon doping concentration of the final layer is higher than that of the n-type contact layer.

Abstract: Exemplary embodiments of the present invention relate to a method of fabricating a light emitting diode (LED). According to an exemplary embodiment of the present invention, the method includes growing a first GaN-based semiconductor layer on a substrate at a first temperature by supplying a chamber with a nitride source gas and a first metal source gas, stopping the supply of the first metal source gas and maintaining the first temperature for a first time period after stopping the supply of the first metal source gas, decreasing the temperature of the substrate to the a second temperature after the first time period elapses, growing an active layer of the first GaN-based semiconductor layer at the second temperature by supplying the chamber with a second metal source gas.