Abstract: Disclosed are an apparatus and system for evaluating a welding condition on the basis of three-dimensional data. An aspect of the present embodiment provides an apparatus for evaluating a welding condition, the apparatus including a communication unit configured to receive a three-dimensional image for an evaluation target from the outside, a base material recognition unit configured to recognize a base material from the three-dimensional image for the evaluation target by using a point cloud, a bead extraction unit configured to extract a welding bead welded between the base materials, a bead cross-section acquisition unit configured to acquire cross-sections at preset intervals for the extracted welding bead, and a profile analysis unit configured to analyze a profile of the welding bead for the cross-section acquired by the bead cross-section acquisition unit.

Abstract: Provided are a random copolymer for forming a neutral layer promoting directed self-assembly pattern formation, a laminate for forming a pattern including the same, and a method for forming a high-quality pattern using the same.

Abstract: The present invention provides a random copolymer including structural units represented by the following Chemical Formulae 1 to 3 for forming a neutral layer for significantly reducing process time and process costs, and promoting directed self-assembly pattern formation of a block copolymer. The present invention further provides a laminate for forming a pattern including a neutral layer having a small thickness variation value due to washing, by including the random copolymer for forming a neutral layer. The present invention further provides a method for forming a pattern capable of stably vertically orienting a block copolymer on a laminate for forming a neutralized pattern.

Abstract: An etchant composition includes a silane compound represented by the following Chemical Formula 1: wherein R1 to R6 are independently hydrogen, halogen, a substituted or unsubstituted C1-C20 hydrocarbyl group, a phenyl group, a C1-C20 alkoxy group, a carboxy group, a carbonyl group, a nitro group, a tri (C1-C20) alkylsilyl group, a phosphoryl group, or a cyano group, L is a direct bond or C1-C3 hydrocarbylene, A is an n-valent radical, and n is an integer of 1 to 4.

Abstract: Provided are a random copolymer for forming a neutral layer promoting directed self-assembly pattern formation, a laminate for forming a pattern including the same, and a method for forming a high-quality pattern using the same.

Abstract: An etching composition includes phosphoric acid, a silane compound comprising at least one silicon (Si) atom, and an ammonium salt represented by Formula 1 below: wherein: L1 to L3 are independently substituted or unsubstituted hydrocarbylene, R1 to R4 are independently hydrogen, a substituted or unsubstituted hydrocarbyl group, and Xn? is an n-valent anion, where n is an integer of 1 to 3.

Abstract: Provided are a random copolymer for forming a neutral layer promoting directed self-assembly pattern formation, a laminate for forming a pattern including the same, and a method for forming a high-quality pattern using the same.

Abstract: An etching composition is provided. The etching composition includes phosphoric acid, phosphoric anhydride, a silane compound represented by Formula 1 below and water: wherein R1 to R6 are independently hydrogen, halogen, a substituted or unsubstituted C1-C20 hydrocarbyl group, a C1-C20 alkoxy group, a carboxy group, a carbonyl group, a nitro group, a tri(C1-C20-alkyl)silyl group, a phosphoryl group, or a cyano group. L is a direct bond or C1 to C3 hydrocarbylene, and A is an n-valent radical, while n is an integer of 1 to 4.

Abstract: An etching composition includes phosphoric acid, a silane compound comprising at least one silicon (Si) atom, and an ammonium salt represented by Formula 1 below: wherein: L1 to L3 are independently substituted or unsubstituted hydrocarbylene, R1 to R4 are independently hydrogen, a substituted or unsubstituted hydrocarbyl group, and Xn? is an n-valent anion, where n is an integer of 1 to 3.

Abstract: An etching composition includes phosphoric acid, a silane compound comprising at least one silicon (Si) atom, and an organic phosphate represented by Formula 1 below: wherein R1 to R3 are independently hydrogen, or a substituted or unsubstituted hydrocarbyl group, and at least one of R1 to R3 is a substituted or unsubstituted hydrocarbyl group.

Abstract: The present invention provides a random copolymer including structural units represented by the following Chemical Formulae 1 to 3 for forming a neutral layer for significantly reducing process time and process costs, and promoting directed self-assembly pattern formation of a block copolymer. The present invention further provides a laminate for forming a pattern including a neutral layer having a small thickness variation value due to washing, by including the random copolymer for forming a neutral layer. The present invention further provides a method for forming a pattern capable of stably vertically orienting a block copolymer on a laminate for forming a neutralized pattern.

Abstract: An etchant composition includes a silane compound represented by the following Chemical Formula 1: wherein R1 to R6 are independently hydrogen, halogen, a substituted or unsubstituted C1-C20 hydrocarbyl group, a phenyl group, a C1-C20 alkoxy group, a carboxy group, a carbonyl group, a nitro group, a tri(C1-C20) alkylsilyl group, a phosphoryl group, or a cyano group, L is a direct bond or C1-C3 hydrocarbylene, A is an n-valent radical, and n is an integer of 1 to 4.

Abstract: An etchant composition includes a silane compound represented by the following Chemical Formula 1: wherein R1 to R6 are independently hydrogen, halogen, a substituted or unsubstituted C1-C20 hydrocarbyl group, a phenyl group, a C1-C20 alkoxy group, a carboxy group, a carbonyl group, a nitro group, a tri (C1-C20)alkylsilyl group, a phosphoryl group, or a cyano group, L is a direct bond or C1-C3 hydrocarbylene, A is an n-valent radical, and n is an integer of 1 to 4.

Abstract: The present invention provides a random copolymer including structural units represented by the following Chemical Formulae 1 to 3 for forming a neutral layer for significantly reducing process time and process costs, and promoting directed self-assembly pattern formation of a block copolymer. The present invention further provides a laminate for forming a pattern including a neutral layer having a small thickness variation value due to washing, by including the random copolymer for forming a neutral layer. The present invention further provides a method for forming a pattern capable of stably vertically orienting a block copolymer on a laminate for forming a neutralized pattern.

Abstract: Provided is a method of preparing poly(alkylene carbonate) using a molecular weight regulator in a process of preparing a copolymer of carbon dioxide/epoxide using a novel complex synthesized from salen-type ligand including a quaternary ammonium salt as a catalyst. According to the present invention, even though the molecular weight regulator is used, an activity of the catalyst may be stably maintained, whereby the low molecular weight of poly(alkylene carbonate) having a desirable level may be effectively provided. In addition, it is expected that since the novel complex as the catalyst of the present invention has a simple structure as compared to the existing copolymerization catalyst, due to the economical preparation cost thereof, the novel complex may be effectively applied to a large-scale commercial process.

Abstract: An etching composition is provided. The etching composition includes phosphoric acid, phosphoric anhydride, a silane compound represented by Formula 1 below and water: wherein R1 to R6 are independently hydrogen, halogen, a substituted or unsubstituted C1-C20 hydrocarbyl group, a C1-C20 alkoxy group, a carboxy group, a carbonyl group, a nitro group, a tri(C1-C20-alkyl)silyl group, a phosphoryl group, or a cyano group. L is a direct bond or C1 to C3 hydrocarbylene, and A is an n-valent radical, while n is an integer of 1 to 4.

Abstract: Provided are an electrolyte for a lithium secondary battery and a lithium secondary battery including the same, wherein the electrolyte for a lithium secondary battery of the present invention may improve DC-IR characteristic and battery storage characteristic, and may improve high-temperature stability, low-temperature characteristic, and lifespan characteristic to thereby be effectively used for manufacturing a secondary battery.

Abstract: Provided are a lithium secondary battery electrolyte and a lithium secondary battery. The lithium secondary battery electrolyte includes a lithium salt, non-aqueous organic solvent, and an oxalate derivative. The lithium secondary battery includes a cathode, an anode, a separator, and the lithium secondary battery electrolyte. The lithium secondary battery electrolyte has excellent high-temperature stability, a high discharge capacity at a low temperature, and excellent lifespan characteristics.

Abstract: An etchant composition includes a silane compound represented by the following Chemical Formula 1: wherein R1 to R6 are independently hydrogen, halogen, a substituted or unsubstituted C1-C20 hydrocarbyl group, a phenyl group, a C1-C20 alkoxy group, a carboxy group, a carbonyl group, a nitro group, a tri (C1-C20) alkylsilyl group, a phosphoryl group, or a cyano group, L is a direct bond or C1-C3 hydrocarbylene, A is an n-valent radical, and n is an integer of 1 to 4.

Abstract: Provided are an electrolyte for a lithium secondary battery, and a lithium secondary battery containing the same. An embodiment of the present invention is directed to providing an electrolyte for a lithium secondary battery having excellent high-temperature and low-temperature characteristics while properly maintaining basic performance such as high rate charge and discharge characteristics, life cycle characteristics, and the like, and a lithium secondary battery containing the same.