Abstract: An ohmic contact of semiconductor and its manufacturing method are disclosed. The present invention provides a low resistivity ohmic contact so as to improve the performance and reliability of the semiconductor device. This ohmic contact is formed by first coating a transition metal and a noble metal on a semiconductor material; then heat-treating the transition metal and the noble metal in an oxidizing environment to oxidize the transition metal. In other words, this ohmic contact primarily includes a transition metal oxide and a noble metal. The oxide in the film can be a single oxide, or a mixture of various oxides, or a solid solution of various oxides. The metal of the film can be a single metal, or various metals or an alloy thereof. The structure of the film can be a mixture or a laminate or multilayered including oxide and metal. The layer structure includes at least one oxide layer and one metal layer, in which at least one oxide layer is contacting to semiconductor.

Abstract: A high efficiency white light emitting diode, having a light emitting diode chip, a transparent substrate, a transparent Ohmic electrode, a reflection layer, a contact diode and covered with submount with a conductive trace. The transparent substrate having a rough surface is disposed on a first surface of the chip. The transparent Ohmic electrode is disposed on a second surface of the chip and coupled with the contact electrode. The submount with the conductive trace used to carry the chip has a high thermal conductivity. The conductive trace is electrically connected to the contact electrode on the chip by soldering material. The surface of the chip is covered with fluorescent paste to absorb a portion of the light generated by the light emitting diode and to emit a complementary light, so that the observer can observe a white light.

Abstract: The fabrication of transmissive attenuating types of phase shift masks by formation of and selective etch of a layer, deposited on a substrate. This single layer provides both the phase shift and the attenuation required and is readily patterned and processed to produce attenuating phase shift masks.

Abstract: An ohmic contact of semiconductor and its manufacturing method are disclosed. The present invention provides a low resistivity ohmic contact so as to improve the performance and reliability of the semiconductor device. This ohmic contact is formed by first coating a transition metal and a noble metal on a semiconductor material; then heat-treating the transition metal and the noble metal in an oxidizing environment to oxidize the transition metal. In other words, this ohmic contact primarily includes a transition metal oxide and a noble metal. The oxide in the film can be a single oxide, or a mixture of various oxides, or a solid solution of various oxides. The metal of the film can be a single metal, or various metals or an alloy thereof. The structure of the film can be a mixture or a laminate or multilayered including oxide and metal. The layer structure includes at least one oxide layer and one metal layer, in which at least one oxide layer is contacting to semiconductor.

Abstract: The fabrication of transmissive attenuating types of phase shift masks by formation of and selective etch of a layer, deposited on a substrate. This single layer provides both the phase shift and the attenuation required and is readily patterned and processed to produce attenuating phase shift masks.

Abstract: An ohmic contact of semiconductor and its manufacturing method are disclosed. The present invention provides a low resistivity ohmic contact so as to improve the performance and reliability of the semiconductor device. This ohmic contact is formed by first coating a transition metal and a noble metal on a semiconductor material; then heat-treating the transition metal and the noble metal in an oxidizing environment to oxidize the transition metal. In other words, this ohmic contact primarily includes a transition metal oxide and a noble metal. The oxide in the film can be a single oxide, or a mixture of various oxides, or a solid solution of various oxides. The metal of the film can be a single metal, or various metals or an alloy thereof. The structure of the film can be a mixture or a laminate or multilayered including oxide and metal. The layer structure includes at least one oxide layer and one metal layer, in which at least one oxide layer is contacting to semiconductor.

Abstract: A high efficiency white light emitting diode, having a light emitting diode chip, a transparent substrate, a transparent Ohmic electrode, a reflection layer, a contact diode and covered with submount with a conductive trace. The transparent substrate having a rough surface is disposed on a first surface of the chip. The transparent Ohmic electrode is disposed on a second surface of the chip and coupled with the contact electrode. The submount with the conductive trace used to carry the chip has a high thermal conductivity. The conductive trace is electrically connected to the contact electrode on the chip by soldering material. The surface of the chip is covered with fluorescent paste to absorb a portion of the light generated by the light emitting diode and to emit a complementary light, so that the observer can observe a white light.

Abstract: A laser diode for digital versatile disks or other purposes and its fabricating method are disclosed. The fabrication does not require any regrowth steps during the MOCVD process or the formation of nitride or oxide to serve as dielectrics, thus significantly simplifying the fabrication process. Further, the laser diode can operate with a relatively low threshold current due to its excellent current confinement. The laser diode for digital versatile disk is made of AlGaInP alloy, in which a layer of AlxGa1-xAs, where x>0.8, is formed between the AlGaInP cladding layers. The layer of AlxGa1-xAs is then oxidized in a hot vapor atmosphere to form AlOx that has at least one opening formed thereon. The AlOx layer serves as a current confinement layer and can provide excellent current confinement. The AlOx layer can also serve as a dielectric layer in the ridge structure.

Abstract: The fabrication of transmissive attenuating types of phase shift masks by formation of and selective etch of a layer, deposited on a substrate. This single layer provides both the phase shift and the attenuation required and is readily patterned and processed to produce attenuating phase shift masks. Materials suitable for the phase shift layer include, but are not limited to, a layer comprising silicon, nitrogen and carbon; and, a layer comprising silicon, oxygen and molybdenum.

Abstract: A method for forming P-type gallium nitride is disclosed in the invention. In this method, Mg--H can be completly discomposed by use of an annealing process, thereby entirely dissociating the hydrogen atoms from the gallium nitride, while the nitrogen atoms are not dissociated from the gallium nitride. Therefore, the P-type gallium nitride having high conductivity is obtained and V.sub.N gap defects created in the gallium nitride do not occur. During the annealing process, nitrogen flux is added around the gallium nitride to prevent decomposition of the gallium nitride. The above-mentioned nitrogen flux can be generated by use of RF plasma, electron cyclotron resonance (ECR) or ion beam. Furthermore, since a forward current is provided across the P--N junction of the gallium nitride, the Mg--H inside the magnesium-doped gallium nitride can be decomposed by just increasing the temperature to 175.degree. C.