Abstract: A metal-insulator-metal (MIM) capacitor having a large capacitance, and a method of manufacturing the same, includes forming a lower electrode on a semiconductor substrate, sequentially forming a first dielectric film, an intermediary electrode, and a second dielectric film on an upper surface of the lower electrode, forming an inter-metal insulating layer on an upper surface of the second dielectric film, etching predetermined portions of the inter-metal insulating layer to form an upper electrode region and via hole regions, selectively etching the second dielectric film exposed in a portion of the via hole regions to expose the intermediary electrode, and forming a metal layer on the upper electrode region and the via hole regions, thereby forming an upper electrode and contact plugs.

Abstract: Disclosed is a ROM device with a repair function where defective cells are repaired by a bit cell unit. The defective cells are repaired using a ground or operating (e.g., a supply) voltage line incorporated in the ROM device. This allows the defective cells to be repaired without separate redundant cells. After repairing, a test operation for replaced cells is not needed.

Abstract: Disclosed is a ROM device with a repair function where defective cells are repaired by a bit cell unit. The defective cells are repaired using a ground or operating (e.g., a supply) voltage line incorporated in the ROM device. This allows the defective cells to be repaired without separate redundant cells. After repairing, a test operation for replaced cells is not needed.

Abstract: Methods of forming metal silicide layers include the steps of forming electrically conductive lines that comprise the steps of forming a layer of polysilicon on a semiconductor substrate and then forming a layer of metal silicide on the polysilicon layer, opposite the substrate. The layer of metal silicide and the layer of polysilicon are then patterned as an electrically conductive line having sidewalls. The semiconductor substrate is then exposed to a cleaning agent that selectively etches the patterned layer of metal silicide at a faster rate than the patterned layer of polysilicon. The patterned layer of metal silicide is then thermally oxidized to define recess spacers extending adjacent sidewalls of the electrically conductive line. An electrically insulating layer is then formed on the electrically conductive line and on the recess spacers. The electrically insulating layer is then anisotropically etched to define insulating spacers on the recess spacers.