Patents by Inventor Kwang-Min Lim

Kwang-Min Lim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12237239
    Abstract: A semiconductor device and a method of manufacturing a semiconductor device. As a non-limiting example, various aspects of this disclosure provide a stackable semiconductor device with small size and fine pitch and a method of manufacturing thereof.
    Type: Grant
    Filed: December 20, 2021
    Date of Patent: February 25, 2025
    Assignee: Amkor Technology Singapore Holding Pte. Ltd.
    Inventors: Jin Young Khim, Ji Young Chung, Ju Hoon Yoon, Kwang Woong Ahn, Ho Jeong Lim, Tae Yong Lee, Jae Min Bae
  • Publication number: 20250033968
    Abstract: The present invention relates to a production method for a bis(fluorosulfonyl)imide metal salt solution, and more specifically, relates to a production method for powder of bis(fluorosulfonyl)imide metal salts represented by Formula 2 by performing azeotropic distillation on an aqueous bis(fluorosulfonyl)imide metal salt solution represented by Formula 2, which is produced by reacting bis(fluorosulfonyl)imide represented by Formula 1 as a starting material with a powder-type metalized reagent. By the production method according to the present invention, no waste is generated at all by directly reacting a bis(fluorosulfonyl)imide compound with a powder-type metalized reagent without using a solvent so that, unlike the prior art, bis(fluorosulfonyl)imide metal salts can be produced in an eco-friendly way.
    Type: Application
    Filed: September 1, 2022
    Publication date: January 30, 2025
    Inventor: Kwang Min LIM
  • Patent number: 12176041
    Abstract: The present technology relates to a memory device and a method of operating the memory device. The memory device includes a memory block including a plurality of memory cells corresponding to a plurality of word line groups, a source line driver configured to apply an erase voltage to a source line of the memory block during an erase operation, a voltage generation circuit configured to apply an operation voltage increasing from a first operation voltage to a second operation voltage to the plurality of word line groups during the erase operation, and a control logic configured to control the source line driver and the voltage generation circuit to perform a suspend operation of stopping the erase operation.
    Type: Grant
    Filed: November 8, 2022
    Date of Patent: December 24, 2024
    Assignee: SK hynix Inc.
    Inventors: Hye Lyoung Lee, Tae Un Youn, Kwang Min Lim
  • Publication number: 20240321365
    Abstract: A semiconductor memory device, and a method of operating the same, includes a memory cell array, a peripheral circuit, and control logic. The memory cell array includes a plurality of memory blocks coupled to a common source line. The peripheral circuit performs a program operation on a memory block selected from among the memory blocks. The control logic controls the program operation of the peripheral circuit. The memory blocks are coupled to corresponding source select lines, respectively. The program operation includes a plurality of program loops, each including a channel precharge operation. During the channel precharge operation, the control logic controls the peripheral circuit so that the common source line floats and a voltage of a source select line coupled to an unselected memory block, among the memory blocks, is increased.
    Type: Application
    Filed: May 31, 2024
    Publication date: September 26, 2024
    Applicant: SK hynix Inc.
    Inventors: Kwang Min LIM, Hee Youl LEE
  • Patent number: 12073893
    Abstract: A semiconductor memory device, and a method of operating the same, includes a memory cell array, a peripheral circuit, and control logic. The memory cell array includes a plurality of memory blocks coupled to a common source line. The peripheral circuit performs a program operation on a memory block selected from among the memory blocks. The control logic controls the program operation of the peripheral circuit. The memory blocks are coupled to corresponding source select lines, respectively. The program operation includes a plurality of program loops, each including a channel precharge operation. During the channel precharge operation, the control logic controls the peripheral circuit so that the common source line floats and a voltage of a source select line coupled to an unselected memory block, among the memory blocks, is increased.
    Type: Grant
    Filed: July 1, 2021
    Date of Patent: August 27, 2024
    Assignee: SK hynix Inc.
    Inventors: Kwang Min Lim, Hee Youl Lee
  • Publication number: 20230420056
    Abstract: The present technology relates to a memory device and a method of operating the memory device. The memory device includes a memory block including a plurality of memory cells corresponding to a plurality of word line groups, a source line driver configured to apply an erase voltage to a source line of the memory block during an erase operation, a voltage generation circuit configured to apply an operation voltage increasing from a first operation voltage to a second operation voltage to the plurality of word line groups during the erase operation, and a control logic configured to control the source line driver and the voltage generation circuit to perform a suspend operation of stopping the erase operation.
    Type: Application
    Filed: November 8, 2022
    Publication date: December 28, 2023
    Applicant: SK hynix Inc.
    Inventors: Hye Lyoung LEE, Tae Un YOUN, Kwang Min LIM
  • Patent number: 11597650
    Abstract: The present invention relates to a novel method for preparing lithium bis(fluorosulfonyl)imide and, more specifically, to a method for preparing lithium bis(fluorosulfonyl)imide, capable of simply and economically preparing lithium bis(fluorosulfonyl)imide, which is a lithium salt to be used in an electrolyte solution for a lithium secondary battery, in a high yield and with high purity. According to the present invention, the novel method for preparing lithium bis(fluorosulfonyl)imide can resolve the problem of a conventional technique by reacting a bis(chlorosulfonyl)imide compound, which is a starting material, with a fluorination reagent, and then immediately treating the same with an alkali reagent without purification or concentration, and has an effect of enabling lithium bis(fluorosulfonyl)imide to be simply and economically prepared in a high yield and with high purity.
    Type: Grant
    Filed: September 28, 2016
    Date of Patent: March 7, 2023
    Assignees: CLS INC., SOLVAY FLUOR GMBH
    Inventor: Kwang Min Lim
  • Publication number: 20220336025
    Abstract: Selected memory cells are programmed by a method of operating a semiconductor memory device. The method includes setting a state of bit lines connected to a selected memory block including the selected memory cells; applying a turn-on voltage to a drain select line connected to the selected memory block, and applying a turn-off voltage to a source select line connected to the memory block; starting to increase a voltage of word lines of a first group of word lines including unselected word lines which are not connected to the selected memory cells and a selected word line connected to the selected memory cells, among a plurality of word lines connected to the selected memory block; and starting to increase a voltage of word lines of a second group of word lines, not included in the first group of word lines, including unselected word lines connected to the selected memory block.
    Type: Application
    Filed: October 6, 2021
    Publication date: October 20, 2022
    Applicant: SK hynix Inc.
    Inventors: Hee Youl LEE, Kwang Min LIM
  • Publication number: 20220215889
    Abstract: A semiconductor memory device, and a method of operating the same, includes a memory cell array, a peripheral circuit, and control logic. The memory cell array includes a plurality of memory blocks coupled to a common source line. The peripheral circuit performs a program operation on a memory block selected from among the memory blocks. The control logic controls the program operation of the peripheral circuit. The memory blocks are coupled to corresponding source select lines, io respectively, The program operation includes a plurality of program loops, each including a channel precharge operation. During the channel precharge operation, the control logic controls the peripheral circuit so that the common source line floats and a voltage of a source select line coupled to an unselected memory block, among the memory blocks, is increased.
    Type: Application
    Filed: July 1, 2021
    Publication date: July 7, 2022
    Applicant: SK hynix Inc.
    Inventors: Kwang Min LIM, Hee Youl LEE
  • Publication number: 20220215886
    Abstract: A semiconductor memory device includes a memory block, a peripheral circuit, and control logic. The memory block includes dummy memory cells connected to dummy word lines and normal memory cells connected to normal word lines. The peripheral circuit performs an erase operation on the memory block. The control logic controls an operation of the peripheral circuit. The control logic controls the peripheral circuit to perform a pre-program operation on first dummy memory cells connected to first dummy word lines among the dummy word lines, in response to an erase command for the memory block, and perform a pre-program operation on second dummy memory cells connected to second dummy word lines among the dummy word lines, after the pre-program operation on the first dummy memory cells. The control logic controls the peripheral circuit to perform an erase operation on the normal memory cells.
    Type: Application
    Filed: July 2, 2021
    Publication date: July 7, 2022
    Applicant: SK hynix Inc.
    Inventors: Kwang Min LIM, Hee Youl LEE
  • Publication number: 20180370799
    Abstract: The present invention relates to a novel method for preparing lithium bis(fluorosulfonyl)imide and, more specifically, to a method for preparing lithium bis(fluorosulfonyl)imide, capable of simply and economically preparing lithium bis(fluorosulfonyl)imide, which is a lithium salt to be used in an electrolyte solution for a lithium secondary battery, in a high yield and with high purity. According to the present invention, the novel method for preparing lithium bis(fluorosulfonyl)imide can resolve the problem of a conventional technique by reacting a bis(chlorosulfonyl)imide compound, which is a starting material, with a fluorination reagent, and then immediately treating the same with an alkali reagent without purification or concentration, and has an effect of enabling lithium bis(fluorosulfonyl)imide to be simply and economically prepared in a high yield and with high purity.
    Type: Application
    Filed: September 28, 2016
    Publication date: December 27, 2018
    Inventor: Kwang Min LIM
  • Patent number: 6031119
    Abstract: Polyalkylene guanidine salts or polyalkylene biguanidine salts having a branched silane compound of formula I show excellent antimicrobial activity and can be applied to various materials including fibers, wood, paper, glass, resins and metals: ##STR1## wherein A is oxyethylene, oxypropylene, oxybutylene, oxystyrene, diphenylsulfone, diphenyl sulfide or alkylamide, which repeating number is 1 to 100,000, or straight or branched alkyl chain containing 1 to 20 carbon atoms;Y represents a blank, HCl, HBr, HI, HNO.sub.
    Type: Grant
    Filed: July 8, 1997
    Date of Patent: February 29, 2000
    Assignee: Yukong Limited
    Inventors: Byung-Hyoung Lee, Woo-Sun Kim, Young-Jun Kim, Sang-Gu Bang, Kwang-Min Lim, Sang-Rak Choi, Keum-Chan Joo