Patents by Inventor Kwang Ro YUN

Kwang Ro YUN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220406946
    Abstract: Disclosed are a multilayer-channel thin-film transistor and a method of fabricating the same. More particularly, a multilayer-channel thin-film transistor, including: a first channel layer formed on a substrate; a first source electrode and first drain electrode formed on the first channel layer; a first gate insulating film formed on the first channel layer, the first source electrode and the first drain electrode; a gate electrode formed on the first gate insulating film; a second gate insulating film formed on the gate electrode; a second channel layer formed on the second gate insulating film; and a second source electrode and second drain electrode formed on the second channel layer, wherein the first source electrode and the second source electrode are electrically connected to each other through a source electrode connection part, and the first drain electrode and the second drain electrode are electrically connected to each other through a drain electrode connection part is disclosed.
    Type: Application
    Filed: November 18, 2020
    Publication date: December 22, 2022
    Inventors: Tae Yeon SEONG, Kwang Ro YUN