Abstract: Disclosed are a multilayer-channel thin-film transistor and a method of fabricating the same. More particularly, a multilayer-channel thin-film transistor, including: a first channel layer formed on a substrate; a first source electrode and first drain electrode formed on the first channel layer; a first gate insulating film formed on the first channel layer, the first source electrode and the first drain electrode; a gate electrode formed on the first gate insulating film; a second gate insulating film formed on the gate electrode; a second channel layer formed on the second gate insulating film; and a second source electrode and second drain electrode formed on the second channel layer, wherein the first source electrode and the second source electrode are electrically connected to each other through a source electrode connection part, and the first drain electrode and the second drain electrode are electrically connected to each other through a drain electrode connection part is disclosed.