Abstract: A substrate processing method uses a substrate processing apparatus including a process chamber defining a processing space in the process chamber, a substrate support mounted in the process chamber to place a substrate on the substrate support, a gas sprayer for supplying a process gas onto the substrate support in the processing space, and a remote plasma generator connected to the process chamber. The method includes placing the substrate on the substrate support, continuously supplying a surface processing gas through the remote plasma generator onto the substrate, continuously supplying a purge gas onto the substrate, supplying plasma power to the remote plasma generator to activate the surface processing gas and supply the activated surface processing gas onto the substrate, and cutting off the plasma power supplied to the remote plasma generator and supplying an etching gas onto the substrate.

Abstract: A substrate processing method using a substrate processing apparatus which comprises a process chamber in which a reaction space is formed to process a substrate in which a composite layer pattern having a plurality of first insulating layers and a plurality of second insulating layers alternately stacked thereon is formed, a substrate support unit, a gas distribution unit, and a plasma reactor, the method comprising the steps of: heating the substrate support unit and the gas distribution unit such that a temperature of the gas distribution unit is maintained equal to or lower than a temperature of the substrate support unit; supplying a reactive gas including a halogen-containing gas to the plasma reactor; generating radicals by applying power to the plasma reactor to activate the halogen-containing gas; and at least partially etching the plurality of first insulating layers in a lateral direction selectively with respect to the plurality of second insulating layers by supplying the radicals onto the substr

Abstract: A method for atomic layer etching may include a step of providing a substrate on which a material to be etched is formed, a modifying step of controlling the substrate at a first temperature and modifying a surface layer of the material to be removed by supplying a modifying gas to the substrate, and an etching step of controlling the substrate at a second temperature different from the first temperature and removing the modified surface layer by supplying an etching gas to the substrate.

Abstract: The present invention relates to an atomic layer etching method for etching a surface of a substrate by using an atomic layer etching apparatus.

Abstract: A method for atomic layer etching may include a step of providing a substrate on which a material to be etched is formed, a modifying step of controlling the substrate at a first temperature and modifying a surface layer of the material to be removed by supplying a modifying gas to the substrate, and an etching step of controlling the substrate at a second temperature different from the first temperature and removing the modified surface layer by supplying an etching gas to the substrate.

Abstract: A substrate processing method uses a substrate processing apparatus including a process chamber defining a processing space in the process chamber, a substrate support mounted in the process chamber to place a substrate on the substrate support, a gas sprayer for supplying a process gas onto the substrate support in the processing space, and a remote plasma generator connected to the process chamber. The method includes placing the substrate on the substrate support, continuously supplying a surface processing gas through the remote plasma generator onto the substrate, continuously supplying a purge gas onto the substrate, supplying plasma power to the remote plasma generator to activate the surface processing gas and supply the activated surface processing gas onto the substrate, and cutting off the plasma power supplied to the remote plasma generator and supplying an etching gas onto the substrate.

Abstract: The present invention relates to an atomic layer etching method for etching a surface of a substrate by using an atomic layer etching apparatus.

Abstract: Disclosed is a technology relating to a method for fabricating a multilayer structure. In the method for fabricating the multilayer structure according to the disclosed embodiment, a first material layer including at least one atomic layer is deposited using a first source gas, which includes a first component, and an oxygen-containing reactive gas which is reactive with the first source gas. On the first material layer, a second material layer including at least one atomic layer is deposited using a second source gas, which includes a second component different from the first component, and an oxygen-containing reactive gas which is reactive with the second source gas. The step of depositing the first material layer and the step of depositing the second material layer constitute one cycle, and the cycle is performed at least once.

Abstract: Disclosed is a technology relating to a method for fabricating a multilayer structure. In the method for fabricating the multilayer structure according to the disclosed embodiment, a first material layer including at least one atomic layer is deposited using a first source gas, which includes a first component, and an oxygen-containing reactive gas which is reactive with the first source gas. On the first material layer, a second material layer including at least one atomic layer is deposited using a second source gas, which includes a second component different from the first component, and an oxygen-containing reactive gas which is reactive with the second source gas. The step of depositing the first material layer and the step of depositing the second material layer constitute one cycle, and the cycle is performed at least once.

Abstract: In a method of deposition a thin film, a substrate having a pattern may be provided. A surface of the substrate may be treated using a deposition-suppressing gas to form a deposition-suppressing layer on the pattern. A process gas may be applied to the pattern to deposit the thin film. The deposition-suppressing gas may include fluorine.

Abstract: In a method of deposition a thin film, a substrate having a pattern may be provided. A surface of the substrate may be treated using a deposition-suppressing gas to form a deposition-suppressing layer on the pattern. A process gas may be applied to the pattern to deposit the thin film. The deposition-suppressing gas may include fluorine.