Abstract: A device may include a first conductive element and an interlevel dielectric arranged over the first conductive element. The device may further include a dual damascene opening including a first end, a second end, and sidewalls extending between the first and second ends, the sidewalls extending through the interlevel dielectric. A metal-insulator-metal (MIM) stack may line the dual damascene opening. The MIM stack may include a first conductive liner lining the sidewalls and the second end of the dual damascene opening, an insulator layer lining the first conductive liner, and a second conductive liner lining the insulator layer. A first metal interconnect may be disposed in and filling the dual damascene opening lined with the MIM stack.

Abstract: Methods of forming planar RRAM and vertical RRAM with tip electrodes and the resulting devices are provided. Embodiments include forming a first metal oxide layer on a first dielectric layer; forming and patterning a mask layer over the first metal oxide layer; etching the first metal oxide through the mask layer to form openings for a first and second metal electrodes; removing the mask layer; forming the first and second metal electrodes in the openings; and forming a second metal oxide layer over the first and second metal electrodes, wherein the first and second metal electrodes are v-shaped in top view with tips of the first and second metal electrodes facing each other and a portion of the second metal oxide layer being formed between the tips of the first and second electrodes.

Abstract: Methods of forming planar RRAM and vertical RRAM with tip electrodes and the resulting devices are provided. Embodiments include forming a first metal oxide layer on a first dielectric layer; forming and patterning a mask layer over the first metal oxide layer; etching the first metal oxide through the mask layer to form openings for a first and second metal electrodes; removing the mask layer; forming the first and second metal electrodes in the openings; and forming a second metal oxide layer over the first and second metal electrodes, wherein the first and second metal electrodes are v-shaped in top view with tips of the first and second metal electrodes facing each other and a portion of the second metal oxide layer being formed between the tips of the first and second electrodes.