Abstract: A thin film transistor of active matrix LCD comprising amorphous silicon layer formed on gate insulating layer and doped with phosphorous or boron, and insulating layer having two laminated structure and SiN layer formed between said two amorphous silicon layers so as to enhance characteristics of the TFT and protect short circuit in the cross points between the gate and source electrodes.

Abstract: A thin film transistor for use in a flat plate display comprising an amorphous silicon layer, a gate electrode, and a source electrode partially separated into a first source subelectrode and second source subelectrode, wherein said gate and source electrodes are deposited on said amorphous silicon layer to form a cross over with each other, a drain electrode connected with said gate electrode, and a picture element electrode connected with said drain electrode.

Abstract: In a liquid crystal display comprising upper and lower transparent glass substrates, an array of thin film transistors and a liquid crystal layer sealingly filled between said upper and lower glass substrates, a color filter layer if provided, comprising, a plurality of color filters laid in a mosaic pattern on the upper glass substrate, said color filters comprising red, green and blue dyes said color filter layer further comprising, a black matrix disposed between said color filters to block the light rays incident between them, and lower glass substrates, a color filter layer comprising a said black matrix having a three-layer structure comprising a silicon nitride film, a light absorbing layer and a chromium layer sequentially deposited on said upper glass substrate.