Patents by Inventor Kwang Sun BAEK
Kwang Sun BAEK has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11621369Abstract: A semiconductor device can define a plurality of points on the basis of an In ion concentration, a first dopant concentration, and a second dopant concentration, and identify each layer on the basis of a region between the points defined as above. The Mg concentration in a specific layer may increase along a specific direction and then decrease.Type: GrantFiled: December 26, 2018Date of Patent: April 4, 2023Assignee: SUZHOU LEKIN SEMICONDUCTOR CO., LTD.Inventors: Dae Seob Han, Kwang Sun Baek, Young Suk Song
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Patent number: 11424329Abstract: A semiconductor device including first to fourth points defined using In ion intensity, Si concentration, and C concentration obtained from SIMS data. The active layer of the device is a first region between the first point and the second point. In addition, the C concentration in a third region between the third point and the fourth point is higher than the C concentration in a second region adjacent to the fourth region along a second direction. Also, the Si concentration in the second region is higher than the Si concentration in the third region.Type: GrantFiled: December 21, 2018Date of Patent: August 23, 2022Assignee: SUZHOU LEKIN SEMICONDUCTOR CO., LTD.Inventors: Dae Seob Han, Kwang Sun Baek, Young Suk Song
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Publication number: 20210367041Abstract: A semiconductor device comprises: a first conductive semiconductor layer; an active layer; and a second conductive semiconductor layer, wherein the semiconductor device includes first to fourth points that are defined by using In ion intensity, Si concentration, and C concentration which are obtained from SIMS data. The active layer may be a first region between the first point and the second point. The C concentration in a third region between the third point and the fourth point may be higher than the C concentration in a second region adjacent to the fourth region along a second direction. The Si concentration in the second region may be higher than the Si concentration in the third region.Type: ApplicationFiled: December 21, 2018Publication date: November 25, 2021Applicant: SUZHOU LEKIN SEMICONDUCTOR CO., LTD.Inventors: Dae Seob HAN, Kwang Sun BAEK, Young Suk SONG
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Publication number: 20210126162Abstract: A semiconductor device can define a plurality of points on the basis of an In ion concentration, a first dopant concentration, and a second dopant concentration, and identify each layer on the basis of a region between the points defined as above. The Mg concentration in a specific layer may increase along a specific direction and then decrease.Type: ApplicationFiled: December 26, 2018Publication date: April 29, 2021Inventors: Dae Seob HAN, Kwang Sun BAEK, Young Suk SONG
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Patent number: 10896661Abstract: An image processing apparatus and a method of controlling the image processing apparatus are provided. The image processing apparatus includes a memory unit; and a processor configured to store image data of all pixels of a zone set in a first image frame in an area of the memory unit, which corresponds to the zone, when at least one of the pixels of the zone does not satisfy a predefined condition, and not to store image data of each of the pixels of the zone in the area of the memory unit, which corresponds to the zone, when all the pixels of the zone satisfy the predefined condition.Type: GrantFiled: July 3, 2018Date of Patent: January 19, 2021Assignee: Samsung Electronics Co., Ltd.Inventors: Seung-hoon Kim, Kwang-sun Baek, Jung-won Lee
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Patent number: 10446715Abstract: Disclosed herein is a semiconductor device. The semiconductor device includes a substrate, a first conductive type semiconductor layer disposed over the substrate, an active layer disposed over the first conductive type semiconductor layer, and a second conductive type semiconductor layer disposed over the active layer. The first conductive type semiconductor layer includes a first layer, a second layer and a third layer having different composition ratios of indium (In). The first semiconductor layer is disposed close to the active layer. The second semiconductor layer is disposed under the first semiconductor layer. The third semiconductor layer is disposed under the second semiconductor layer. In content is reduced from the active layer to the third semiconductor layer, and In content of the third semiconductor layer may be 5% or more to 10% or less of that of the active layer.Type: GrantFiled: November 2, 2017Date of Patent: October 15, 2019Assignee: LG INNOTEK CO., LTD.Inventors: Kwang Sun Baek, Jong Ho Na, Dae Seob Han, Jung Hyun Hwang
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Publication number: 20190259913Abstract: Disclosed herein is a semiconductor device. The semiconductor device includes a substrate, a first conductive type semiconductor layer disposed over the substrate, an active layer disposed over the first conductive type semiconductor layer, and a second conductive type semiconductor layer disposed over the active layer. The first conductive type semiconductor layer includes a first layer, a second layer and a third layer having different composition ratios of indium (In). The first semiconductor layer is disposed close to the active layer. The second semiconductor layer is disposed under the first semiconductor layer. The third semiconductor layer is disposed under the second semiconductor layer. In content is reduced from the active layer to the third semiconductor layer, and In content of the third semiconductor layer may be 5% or more to 10% or less of that of the active layer.Type: ApplicationFiled: November 2, 2017Publication date: August 22, 2019Applicant: LG INNOTEK CO., LTD.Inventors: Kwang Sun BAEK, Jong Ho NA, Dae Seob HAN, Jung Hyun HWANG
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Publication number: 20190012990Abstract: An image processing apparatus and a method of controlling the image processing apparatus are provided. The image processing apparatus includes a memory unit; and a processor configured to store image data of all pixels of a zone set in a first image frame in an area of the memory unit, which corresponds to the zone, when at least one of the pixels of the zone does not satisfy a predefined condition, and not to store image data of each of the pixels of the zone in the area of the memory unit, which corresponds to the zone, when all the pixels of the zone satisfy the predefined condition.Type: ApplicationFiled: July 3, 2018Publication date: January 10, 2019Applicant: Samsung Electronics Co., Ltd.Inventors: Seung-hoon KIM, Kwang-sun BAEK, Jung-won LEE
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Patent number: 9768346Abstract: A light-emitting device and a lighting system includes a first conductivity type semiconductor layer, a gallium nitride-based super lattice layer on the first conductivity type semiconductor layer, an active layer, on the gallium nitride-based super lattice layer, a second conductivity type gallium nitride-based layer on the active layer, and a second conductivity type semiconductor layer, on the second conductivity type gallium nitride-based layer. The second conductivity type gallium nitride-based layer can include a second conductivity type AlxGa(1?x)N/AlyGa(1?y)N, such as AlxGa(1?x)N/AlyGa(1?y)N, on the active layer.Type: GrantFiled: October 22, 2013Date of Patent: September 19, 2017Assignee: LG INNOTEK CO., LTD.Inventors: Dae Seob Han, Yong Tae Moon, Kwang Sun Baek, A Ra Cho
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Patent number: 9456165Abstract: The display apparatus includes a receiver configured to receive a first image set, a storage configured to store a second image set with a size corresponding to the first image set, an image processor configured to receive the first image set and the second image set in units of frames and to synthesize the first image set and the second image set to generate a final image set, and a display configured to display the final image set. The image processor detects a region of the second image set, to be synthesized with the first image set, receives only partial data corresponding to the detected region with respect to the second image set of a next frame after the region is detected, and synthesizes the some received data and the first image set to generate a final image set.Type: GrantFiled: October 16, 2015Date of Patent: September 27, 2016Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Jung-won Lee, Young-woong Kim, Kwang-sun Baek
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Patent number: 9431575Abstract: The embodiment relates to a light-emitting device, a method of manufacturing the same, a light-emitting device package, and a lighting system. A light-emitting device according to the embodiment may include: a first conductive semiconductor layer; a gallium nitride-based superlattice layer on the first conductive semiconductor layer; an active layer on the gallium nitride-based superlattice layer; a second conductive gallium nitride-based layer on the active layer; and a second conductive semiconductor layer on the second conductive gallium nitride-based layer. The second conductive gallium nitride-based layer may include a second conductive GaN layer having a first concentration, a second conductive InxAlyGa(1-x-y)N (0<x<1, 0<y<1) layer having a second concentration and a second conductive AlzGa(1-z)N (0<z<1) layer having a third concentration on the active layer.Type: GrantFiled: October 8, 2013Date of Patent: August 30, 2016Assignee: LG INNOTEK CO., LTD.Inventors: Dae Seob Han, Yong Tae Moon, Kwang Sun Baek, A Ra Cho
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Publication number: 20160112669Abstract: The display apparatus includes a receiver configured to receive a first image set, a storage configured to store a second image set with a size corresponding to the first image set, an image processor configured to receive the first image set and the second image set in units of frames and to synthesize the first image set and the second image set to generate a final image set, and a display configured to display the final image set. The image processor detects a region of the second image set, to be synthesized with the first image set, receives only partial data corresponding to the detected region with respect to the second image set of a next frame after the region is detected, and synthesizes the some received data and the first image set to generate a final image set.Type: ApplicationFiled: October 16, 2015Publication date: April 21, 2016Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Jung-won LEE, Young-woong KIM, Kwang-sun BAEK
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Patent number: 9312433Abstract: Embodiments of the present invention include a light emitting element, a method for manufacturing the light-emitting element according to one embodiment of the present invention, comprises: a first conductive semiconductor layer 112; a GaN-based superlattice layer 124 on the first conductive semiconductor layer 112; an active layer 114 on the GaN-based superlattice layer 124; and a second conductive semiconductor layer 116 on the active layer 114, wherein the GaN-based superlattice layer 124 has a bandgap energy level that varies in a direction from the first conductive semiconductor layer 112 to the active layer 114.Type: GrantFiled: September 24, 2013Date of Patent: April 12, 2016Assignee: LG INNOTEK CO., LTD.Inventors: Dae Seob Han, Yong Tae Moon, A Ra Cho, Kwang Sun Baek
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Publication number: 20150287876Abstract: One embodiment of the present invention relates to a light-emitting device, a method for manufacturing the light-emitting device, a light-emitting device package, and a lighting system. The light-emitting device, according to the one embodiment, comprises: a first conductive semiconductor layer (112); a gallium nitride-based super lattice layer (124) on the first conductive semiconductor layer (112); an active layer (114) on the gallium nitride-based super lattice layer (124); a second conductive gallium nitride-based layer on the active layer (114); and a second conductive semiconductor layer (116) on the second conductive gallium nitride-based layer, wherein the second conductive gallium nitride-based layer can include a second conductive AlxGa(1-x)N/AlyGa(1-y)N (here, AlxGa(1-x)N/AlyGa(1-y)N) on the active layer (114).Type: ApplicationFiled: October 22, 2013Publication date: October 8, 2015Applicant: LG INNOTEK CO., LTD.Inventors: Dae Seob Han, Yong Tae Moon, Kwang Sun Baek, A Ra Cho
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Publication number: 20150270436Abstract: The embodiment relates to a light-emitting device, a method of manufacturing the same, a light-emitting device package, and a lighting system. A light-emitting device according to the embodiment may include: a first conductive semiconductor layer; a gallium nitride-based superlattice layer on the first conductive semiconductor layer; an active layer on the gallium nitride-based superlattice layer; a second conductive gallium nitride-based layer on the active layer; and a second conductive semiconductor layer on the second conductive gallium nitride-based layer. The second conductive gallium nitride-based layer may include a second conductive GaN layer having a first concentration, a second conductive InxAlyGa(1-x-y)N (0<x<1, 0<y<1) layer having a second concentration and a second conductive AlzGa(1-z)N (0<z<1) layer having a third concentration on the active layer.Type: ApplicationFiled: October 8, 2013Publication date: September 24, 2015Applicant: LG INNOTEK CO., LTD.Inventors: Dae Seob Han, Yong Tae Moon, Kwang Sun Baek, A Ra Cho
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Publication number: 20150255669Abstract: Embodiments of the present invention include a light emitting element, a method for manufacturing the light-emitting element according to one embodiment of the present invention, comprises: a first conductive semiconductor layer 112; a GaN-based superlattice layer 124 on the first conductive semiconductor layer 112; an active layer 114 on the GaN-based superlattice layer 124; and a second conductive semiconductor layer 116 on the active layer 114, wherein the GaN-based superlattice layer 124 has a bandgap energy level that varies in a direction from the first conductive semiconductor layer 112 to the active layer 114.Type: ApplicationFiled: September 24, 2013Publication date: September 10, 2015Applicant: LG INNOTEK CO., LTD.Inventors: Dae Seob Han, Yong Tae Moon, A Ra Cho, Kwang Sun Baek
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Patent number: 9112092Abstract: Disclosed is a light emitting device and a light emitting device package. The light emitting device includes a substrate; a first conductive semiconductor layer on the substrate; an active layer on the first conductive semiconductor layer; and a second conductive semiconductor layer on the active layer, wherein the active layer includes: a plurality of barrier layers; and a plurality of well layers between the barrier layers, and wherein at least two of the barrier layers have different energy bandgaps and have different thicknesses.Type: GrantFiled: March 15, 2013Date of Patent: August 18, 2015Assignee: LG INNOTEK CO., LTD.Inventors: Jong Hak Won, Heon Jin Seo, Kwang Sun Baek
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Patent number: 9082929Abstract: Disclosed is a light emitting device including a substrate, a buffer layer on the substrate, and a light-emitting structure on the buffer layer. The buffer layer has a refractive index decreased toward the substrate from the light-emitting structure.Type: GrantFiled: March 14, 2013Date of Patent: July 14, 2015Assignee: LG INNOTEK CO., LTD.Inventors: Oh Min Kwon, Jong Hak Won, Kwang Sun Baek, Heon Jin Seo
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Publication number: 20140034903Abstract: Disclosed is a light emitting device and a light emitting device package. The light emitting device includes a substrate; a first conductive semiconductor layer on the substrate; an active layer on the first conductive semiconductor layer; and a second conductive semiconductor layer on the active layer, wherein the active layer includes: a plurality of barrier layers; and a plurality of well layers between the barrier layers, and wherein at least two of the barrier layers have different energy bandpgaps and have different thicknesses.Type: ApplicationFiled: March 15, 2013Publication date: February 6, 2014Inventors: Jong Hak Won, Heon Jin Seo, Kwang Sun Baek
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Publication number: 20130328056Abstract: Disclosed is a light emitting device including a substrate, a buffer layer on the substrate, and a light-emitting structure on the buffer layer. The buffer layer has a refractive index decreased toward the substrate from the light-emitting structure.Type: ApplicationFiled: March 14, 2013Publication date: December 12, 2013Applicant: LG INNOTEK CO., LTD.Inventors: Oh Min KWON, Jong Hak WON, Kwang Sun BAEK, Heon Jin SEO