Abstract: The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a housing having a treating space; a support unit positioned within the treating space and configured to apply a power and to support a substrate; and a plasma control unit configured to change a characteristic of a plasma formed in the treating space, and wherein the plasma control unit includes: a gap control plate positioned above the support unit; and a plate driver changing a position of the gap control plate, and the plate driver maintains a gap between a bottom surface of the gap control plate and a top surface of the support plate while changing a characteristic of the plasma by changing the position of the gap control plate.

Abstract: The inventive concept provides a substrate treating method. The substrate treating method includes treating an edge region of a substrate using a plasma; and acquiring an image to be determined by imaging a substrate on which a treatment has been completed in the treating the edge region, comparing the image to be determined with an image stored in a database, and determining whether a substrate treated in the treating the edge region is defective or not, and wherein the image stored in the database is a defective image of a substrate which has been determined as defective, which is previously stored in the database in the acquiring the image to be determined.

Abstract: The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a support plate for supporting a substrate and applying a power; a plasma control unit placed above the support plate to face the support plate; and a top electrode unit positioned to surround the plasma control unit, and wherein the plasma control unit includes: a dielectric plate positioned to face a top surface of a substrate mounted on the support plate; and a metal plate positioned above the dielectric plate, and the metal plate is electrically connected to the top electrode unit.

Abstract: The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a housing having a treating space; a support unit configured to support a substrate at the treating space; and a gas supply unit configured to supply a gas which is excited to a plasma to the treating space, and wherein the support unit includes: a chuck supporting a center region of the substrate; and an edge electrode formed in a ring shape, and wherein the edge electrode includes: a body portion surrounding the chuck at an outer side of the chuck; and a protrusion portion formed protruding to an outer side of the body portion, and a hole is formed at the protrusion portion penetrating the protrusion portion and which exhausts an atmosphere of the treating space.

Abstract: The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a housing having a treating space; a support unit configured to support a substate within the treating space; and a plasma source for generating a plasma by exciting a gas supplied to the treating space, and wherein the support unit includes: a chuck having the substrate mounted to a top surface thereof; and a ring member in a ring shape surrounding an outer side of the chuck, and the ring member includes a cut surface which divides the ring member and a holding member positioned at the cut surface which holds a position of the ring member which is divided by the cut surface.

Abstract: A substrate processing apparatus is provided. The substrate processing apparatus includes a chuck supporting a substrate, a gas supply unit configured to supply a process gas to an edge region of the substrate supported on the chuck, and an edge electrode provided to surround the substrate supported on the chuck when viewed from above and to generate plasma from the gas, wherein the edge electrode has a ring shape and a groove recessed in a direction from an inner periphery of the edge electrode to an outer periphery of the edge electrode when viewed from above is formed in the edge electrode.

Abstract: A substrate processing apparatus are provided. The substrate processing apparatus allows a supply flow rate per unit time for process gas supplied to the central area of a substrate to be greater than a supply flow rate per unit time for process gas supplied to an edge area of the substrate, when processing the edge area of the substrate supported by the chuck.

Abstract: Provided is a substrate processing apparatus including: a chuck configured to support a substrate; a dielectric plate disposed to face an upper surface of the substrate supported by the chuck; a gas supply unit configured to supply process gas to an edge region of the substrate; and a first edge electrode configured to generate plasma from the process gas to the edge region of the substrate supported by the chuck, in which the first edge electrode includes: a plurality of electrode units; and one or more insulating units provided between the electrode units.

Abstract: A substrate processing apparatus are provided. The substrate processing apparatus allows a supply flow rate per unit time for process gas supplied to the central area of a substrate to be greater than a supply flow rate per unit time for process gas supplied to an edge area of the substrate, when processing the edge area of the substrate supported by the chuck.

Abstract: An apparatus for treating a substrate includes a housing having a process space inside and having an exhaust hole formed through the housing, a support unit that supports the substrate in the process space, and an exhaust unit that is provided at the bottom of the housing and that exhausts the process space. The exhaust unit includes a body having a buffer space inside and having a through-hole formed through the body, the buffer space connecting to the process space, and an exhaust pipe that discharges gas in the buffer space. The support unit includes a support plate that supports the substrate in the process space and a support shaft connected with the support plate and inserted into the through-hole and the exhaust hole, the support shaft having a smaller diameter than the through-hole.